IRGMIC50U
INSULATED GATE BIPOLAR TRANSISTOR
Features
V
CES
= 600V
V
CE(on) max
= 3.0V
@V
GE
= 15V, I
C
= 27A
Parameter
Max.
Units
V
CES
Collector-to-Emitter Breakdown Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
45*
I
C
@ T
C
= 100C
Continuous Collector Current
27
A
I
CM
Pulsed Collector Current
220
I
LM
Clamped Inductive Load Current
180
V
GE
Gate-to-Emitter Voltage
20
V
P
D
@ T
C
= 25C
Maximum Power Dissipation
200
W
P
D
@ T
C
= 100C
Maximum Power Dissipation
80
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
C
Lead Temperature
300 (0.063in./1.6mm from case for 10s)
Weight
10.5 (typical)
g
Absolute Maximum Ratings
02/20/02
www.irf.com
1
Ultra Fast Speed IGBT
Electrically Isolated and Hermetically Sealed
Simple Drive Requirements
Latch-proof
Ultra Fast operation
>
10 kHz
Switching-loss rating includes all "tail" losses
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at the
same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current
applications.
TO-259AA
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case-IGBT
--
--
0.625
RthJC
Junction-to-Case-Diode
--
--
1.0
RthCS
Case-to-Sink
--
0.21
--
RthJA
Junction-to-Ambient
--
--
30
C/W
PD -90813A
The performance of various IGBTs varies greatly with frequency. Note that IR now
provides the designer with a speed benchmark (f
Ic/2
, or the "half-current frequency "),
as well as an indication of the current handling capability
of the device.
Description
*Current is limited by pin diameter
WITH ON-BOARD REVERSE DIODE
E
G
n-ch an nel
C
For footnotes refer to the last page
2
www.irf.com
IRGMIC50U
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
140
I
C
= 27A
Q
ge
Gate - Emitter Charge (turn-on)
35
nC
V
CC
= 300V
See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)
70
V
GE
= 15V
t
d(on)
Turn-On Delay Time
50
I
C
= 27A, V
CC
= 480V
t
r
Rise Time
75
V
GE
= 15V, R
G
= 2.35
t
d(off)
Turn-Off Delay Time
300
Energy losses include "tail"
t
f
Fall Time
210
See Fig. 9, 10, 13
E
on
Turn-On Switching Loss
0.12
E
off
Turn-off Switching Loss
1.6
E
ts
Total Switching Loss
1.7
2.8
t
d(on)
Turn-On Delay Time
24
T
J
= 125C
t
r
Rise Time
27
C
= 27A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
180
V
GE
= 15V, R
G
= 2.35
t
f
Fall Time
130
Energy losses include "tail"
E
ts
Total Switching Loss
2.7
See Fig. 11, 13
L
C
+L
E
Total Inductance
6.8
nH
Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
C
ies
Input Capacitance
2900
V
GE
= 0V
C
oes
Output Capacitance
330
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
41
= 1.0MHz
T
rr
Diode Peak Reverse Recovery
100
di/dt = 200A/S,
I
F
= 27A
Time
VR 200V
Q
r r
Diode Peak Reverse Recovery
375
di/dt = 200A/S,
I
F
= 27A
Charge
T
J
= 125C, VR 200V
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
V
V
GE
= 0V, I
C
= 1.0 mA
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
0.6
V/C
V
GE
= 0V, I
C
= 1.0 mA
3.0
I
C
= 27A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage
3.25
I
C
= 45A See Fig. 5
2.85
I
C
= 27A , T
J
= 125C
V
GE(th)
Gate Threshold Voltage
3.0
5.5
V
CE
= V
GE
, I
C
= 250 A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
-13
mV/C V
CE
= V
GE
, I
C
= 250 A
g
fe
Forward Transconductance
16
S
V
CE
=
100V, I
C
= 27A
250
V
GE
= 0V, V
CE
= 480V
5000
V
GE
= 0V, V
CE
= 480V, T
J
= 125C
I
GES
Gate-to-Emitter Leakage Current
100
V
GE =
20
V
FM
Diode Forward Voltage Drop
1.7
I
C
= 27A
1.5
I
C
= 27A , T
J
= 125C
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
A
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
V
ns
ns
mJ
For footnotes refer to the last page
Note: Corresponding Spice and Saber models are available on the Website.
V
ns
nC
mJ
n A
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