C-45
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case
--
--
1.2
R
CS
Case-to-Sink, flat, greased surface
--
0.24
--
C/W
R
JA
Junction-to-Ambient, typical socket mount
--
--
40
Wt
Weight
--
6 (0.21)
--
g (oz)
IRGPH30S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
Switching-loss rating includes all "tail" losses
Optimized for line frequency operation (to 400Hz)
V
CES
= 1200V
V
CE(sat)
3.0V
@V
GE
= 15V, I
C
= 13A
E
C
G
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
1200
V
I
C
@ T
C
= 25C
Continuous Collector Current
22
I
C
@ T
C
= 100C
Continuous Collector Current
13
A
I
CM
Pulsed Collector Current
44
I
LM
Clamped Inductive Load Current
44
V
GE
Gate-to-Emitter Voltage
20
V
E
ARV
Reverse Voltage Avalanche Energy
10
mJ
P
D
@ T
C
= 25C
Maximum Power Dissipation
100
W
P
D
@ T
C
= 100C
Maximum Power Dissipation
13
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
Thermal Resistance
TO-247AC
Preliminary Data Sheet PD - 9.1139
Revision 0
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C-46
IRGPH30S
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
28
42
I
C
= 13A
Q
ge
Gate - Emitter Charge (turn-on)
--
8.2
12
nC
V
CC
= 400V
Q
gc
Gate - Collector Charge (turn-on)
--
6.8
10
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
28
--
T
J
= 25C
t
r
Rise Time
--
22
--
ns
I
C
= 13A, V
CC
= 960V
t
d(off)
Turn-Off Delay Time
--
1200 1800
V
GE
= 15V, R
G
= 23
t
f
Fall Time
--
680 1140
Energy losses include "tail"
E
on
Turn-On Switching Loss
--
0.90
--
E
off
Turn-Off Switching Loss
--
12
--
mJ
E
ts
Total Switching Loss
--
13
19
t
d(on)
Turn-On Delay Time
--
26
--
T
J
= 150C,
t
r
Rise Time
--
27
--
ns
I
C
= 13A, V
CC
= 960V
t
d(off)
Turn-Off Delay Time
--
1280
--
V
GE
= 15V, R
G
= 23
t
f
Fall Time
--
2000
--
Energy losses include "tail"
E
ts
Total Switching Loss
--
23
--
mJ
L
E
Internal Emitter Inductance
--
13
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
685
--
V
GE
= 0V
C
oes
Output Capacitance
--
43
--
pF
V
CC
= 30V
C
res
Reverse Transfer Capacitance
--
8.3
--
= 1.0MHz
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200
--
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
20
--
--
V
V
GE
= 0V, I
C
= 1.0A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
1.5
--
V/C
V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
--
2.0
3.0
I
C
= 13A
--
2.8
--
V
I
C
= 22A
See Fig. 2, 5
--
2.6
--
I
C
= 13A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
5.5
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-12
-- mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
3.1
6.3
--
S
V
CE
= 100V, I
C
= 13A
I
CES
Zero Gate Voltage Collector Current
--
--
250
A
V
GE
= 0V, V
CE
= 1200V
--
--
1000
V
GE
= 0V, V
CE
= 1200V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Notes:
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
Repetitive rating; pulse width limited
by maximum junction temperature.
V
CC
=80%(V
CES
), V
GE
=20V, L=10H,
R
G
= 23
Pulse width
80s; duty factor
0.1%.
Pulse width 5.0s,
single shot.
Refer to Section D - page D-13
Package Outline 3 - JEDEC Outline TO-247AC (TO-3P)
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