IRGS14B40L
INSULATED GATE BIPOLAR TRANSISTOR
14A, Voltage Clamped
400V IGBT
11-4-98
PROVISIONAL
2
D P a k
Co l l ect o r
Em it te r
G at e
Rg
Rg e
MIN
TYP MAX
UNITS
CONDITIONS
V
CL
COLLECTOR - EMITTER CLAMPING VOLTAGE
370
400 430
V
RG =1 kOhm , Ic =7A
V
ECAV
EMITTER - COLLECTOR AVALANCHE VOLTAGE
24
30
V
Ic = -10mA, 25 C
V
GE(TH)
GATE - EMITTER THRESHOLD VOLTAGE
0.75
1.8
2.2
V
Ic = 1 mA
I
C25
CONTINUOUS COLLECTOR CURRENT
18
A
VGE = 5V, 25 C
I
C100
CONTINUOUS COLLECTOR CURRENT
14
A
VGE = 5V, 100 C
V
GE
GATE - EMITTER VOLTAGE
-10
10
V
T
J
OPERATING JUNCTION TEMPERATURE RANGE
-40 175 C
V
ESD
ELECTROSTATIC VOTAGE FROM
EACH PIN TO EACH OF THE OTHER PINS
-6
6
kV
C= 100pF, R = 1.5 kOhms
I
SCIS25C
SELF CLAMPED INDUCTIVE SWITCHING CURRENT
24
A
0.7mH INDUCTANCE, 25 C
14
A
2.2mH INDUCTANCE, 25 C
10
A
4.7mH INDUCTANCE, 25 C
I
SCIS100C
SELF CLAMPED INDUCTIVE SWITCHING CURRENT
13
A
1.5mH INDUCTANCE, 150 C
7.5
A
4.7mH INDUCTANCE, 150 C
5.5
A
8.7mH INDUCTANCE, 150 C
t
sc
SHORT CIRCUIT WITHSTAND TIME
750
us
Tc = 150 C
R1
GATE SERIES RESISTANCE
75
Ohms
R2
GATE EMITTER RESISTANCE
20
k Ohms
V
CE(ON)
COLLECTOR - EMITTER SATURATION VOLTAGE
1.55
V
Ic= 7A, VGE =5V, 25C
1.8
V
Ic = 10A, VGE =5V, 25C
R
q
JC
THERMAL RESISTANCE, JUNCTION TO CASE
1.5
O
K / WATT
R
q
JA
THERMAL RESISTANCE,JUNCTION TO AMBIENT
(PCB MOUNTED, STEADY STATE )
40
O
K / WATT
IRGS14
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
--
I
C
= A
Q
ge
Gate - Emitter Charge (turn-on)
--
--
nC
V
CC
= V
See Fig.8
Q
gc
Gate - Collector Charge (turn-on)
--
--
V
GE
= V
t
d(on)
Turn-On Delay Time
--
--
--
t
r
Rise Time
--
--
--
T
J
= C
t
d(off)
Turn-Off Delay Time
--
--
--
I
C
= A, V
CC
= V
t
f
Fall Time
--
--
--
V
GE
= V, R
G
=
W
E
on
Turn-On Switching Loss
--
--
Energy losses include "tail"
E
off
Turn-Off Switching Loss
--
--
mJ
See Fig. 9,10,14
E
ts
Total Switching Loss
--
--
t
sc
Short Circuit Withstand Time
--
--
750
s
V
CC
= V, T
J
= C
V
GE
= V, R
G
=
W
, V
CPK
< V
t
d(on)
Turn-On Delay Time
--
--
--
T
J
= C,
t
r
Rise Time
--
--
--
I
C
= A, V
CC
= V
t
d(off)
Turn-Off Delay Time
--
--
--
V
GE
= V, R
G
=
W
t
f
Fall Time
--
--
--
Energy losses include "tail"
E
ts
Total Switching Loss
--
--
mJ
See Fig. 11,14
L
E
Internal Emitter Inductance
--
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
--
V
GE
= V
C
oes
Output Capacitance
--
--
pF
V
CC
= V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
--
= MHz
t
rr
Diode Reverse Recovery Time
--
ns
T
J
= C See Fig.
--
T
J
= C 14 I
F
= A
I
rr
Diode Peak Reverse Recovery Current
--
A
T
J
= C See Fig.
--
T
J
= C 15 V
R
= V
Q
rr
Diode Reverse Recovery Charge
--
nC
T
J
= C See Fig.
--
T
J
= C 16 di/dt = As
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
--
--
A/s
T
J
= C See Fig.
During t
b
--
--
T
J
= C 17
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
--
--
V
V
GE
= V, I
C
= A
D
V
(BR)CES
/
D
T
J
Temperature Coeff. of Breakdown Voltage
--
--
--
V/C
V
GE
= V, I
C
= mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
--
1.55
--
I
C
= 7A V
GE
= 5V
--
1.8
--
V
I
C
= 10A
See Fig. 2, 5
--
--
I
C
= A, T
J
= C
V
GE(th)
Gate Threshold Voltage
--
V
CE
= V
GE
, I
C
= A
D
V
GE(th)
/
D
T
J
Temperature Coeff. of Threshold Voltage
--
--
mV/C V
CE
= V
GE
, I
C
= A
g
fe
Forward Transconductance
--
S
V
CE
= V, I
C
= A
I
CES
Zero Gate Voltage Collector Current
--
--
A
V
GE
= V, V
CE
= V
--
--
V
GE
= V, V
CE
= V, T
J
= C
V
FM
Diode Forward Voltage Drop
--
V
I
C
= A
See Fig. 13
--
I
C
= A, T
J
= C
I
GES
Gate-to-Emitter Leakage Current
--
--
nA
V
GE
= V
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
ns
ns
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