Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
59
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
41
A
I
DM
Pulsed Drain Current
230
P
D
@T
C
= 25C
Power Dissipation
130
W
Linear Derating Factor
0.89
W/C
V
GS
Gate-to-Source Voltage
10
V
E
AS
Single Pulse Avalanche Energy
320
mJ
I
AR
Avalanche Current
35
A
E
AR
Repetitive Avalanche Energy
13
mJ
dv/dt
Peak Diode Recovery dv/dt
2.2
V/ns
I
G
V
GS
Clamp Current
50
mA
V
ESD
Electrostatic Votage Rating
2.0
kV
T
J
Operating Junction and
-55 to + 175
C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Mounting torque, 6-32 or M3 srew
10 lbfin (1.1Nm)
IRLBD59N04E
HEXFET
Power MOSFET
The IRLBD59N04E is a 40V, N-channel HEXFET
power MOSFET with gate protection provided by
integrated back to back zener diodes. Temperature
sensing is given by the change in forward voltage drop
of two antiparallel electrically isolated poly-silicon diodes.
The IRLBD59N04E provides cost effective temperature
sensing for system protection along with the quality and
ruggedness you expect from a HEXFET power MOSFET.
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.12
C/W
R
JA
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 0.018
I
D
= 59A
l
Integrated Temperature Sensing Diode
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175C Operating Temperature
l
Fully Avalanche Rated
l
Zener Gate Protected
Description
4/11/00
PD -93910
www.irf.com
1
5 Lead-D
2
Pak
IRFLBD59N04E
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
40
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.036
V/C
Reference to 25C, I
D
= 1mA
0.018
V
GS
= 10V, I
D
= 35A
0.021
V
GS
= 5.0V, I
D
= 30A
V
GS(th)
Gate Threshold Voltage
1.0
2.0
V
V
DS
= V
GS
, I
D
= 250A
V
GS
Clamp Voltage
10
20
V
I
GSS
= 20A
g
fs
Forward Transconductance
29
S
V
DS
= 25V, I
D
= 35A
25
A
V
DS
= 40V, V
GS
= 0V
250
V
DS
= 32V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
1.0
V
GS
= 5.0V
Gate-to-Source Reverse Leakage
-1.0
V
GS
= -5.0V
Q
g
Total Gate Charge
53
I
D
= 35A
Q
gs
Gate-to-Source Charge
16
nC
V
DS
= 32V
Q
gd
Gate-to-Drain ("Miller") Charge
18
V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
7.9
V
DD
= 20V
t
r
Rise Time
110
ns
I
D
= 35A
t
d(off)
Turn-Off Delay Time
30
R
G
= 5.1
,
t
f
Fall Time
74
V
GS
= 5.0V
,
See Fig.10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
2310
V
GS
= 0V
C
oss
Output Capacitance
640
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
130
pF
= 1.0MHz, See Fig. 5
C
oss
Output Capacitance
2250
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
580
V
GS
= 0V, V
DS
= 32V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
530
V
GS
= 0V, V
DS
= 0V to 32V
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 35A, V
GS
= 0V
t
rr
Reverse Recovery Time
54
81
ns
T
J
= 25C, I
F
= 35A
Q
rr
Reverse RecoveryCharge
90
130
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
59
230
A
S
D
G
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
nH
L
S
Internal Source Inductance
5.0
L
D
Internal Drain Inductance
2.0
I
DSS
Drain-to-Source Leakage Current
Sense Diode Rating
Parameter
Min. Typ. Max. Units
Conditions
V
FM
Sense Diode Maximum Voltage Drop
675
725
mV
I
F
= 250A
V
F
/
T
J
Sense Diode Temperature Coefficient
-1.30 -1.40 -1.58 mV/C I
F
= 250A, See Fig.14
A
IRLBD59N04E
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.7V
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 175 C
J
TOP
BOTTOM
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.7V
10
100
1000
2.0
3.0
4.0
5.0
6.0
7.0
8.0
V = 15V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 175 C
J
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
59A
IRFLBD59N04E
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 175 C
J
1
10
100
1000
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
0
10
20
30
40
50
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
35A
V
= 20V
DS
V
= 32V
DS
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
IRLBD59N04E
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
25
50
75
100
125
150
175
0
10
20
30
40
50
60
T , Case Temperature
( C)
I , Drain Current (A)
C
D
LIMITED BY PACKAGE
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