370A
INVERTER GRADE THYRISTORS
Hockey Puk Version
ST183C..C SERIES
1
Bulletin I25178 rev. B 04/00
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Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Features
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
case style TO-200AB (A-PUK)
I
T(AV)
370
A
@ T
hs
55
C
I
T(RMS)
690
A
@ T
hs
25
C
I
TSM
@
50Hz
4900
A
@ 60Hz
5130
A
I
2
t
@
50Hz
120
KA
2
s
@ 60Hz
110
KA
2
s
V
DRM
/V
RRM
400 to 800
V
t
q
range
10 to 20
s
T
J
- 40 to 125
C
Parameters
ST183C..C
Units
Major Ratings and Characteristics
ST183C..C Series
2
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Bulletin I25178 rev. B 04/00
ST183C..C
40
Voltage
V
DRM
/V
RRM
, maximum
V
RSM
, maximum
I
DRM
/I
RRM
max.
Type number
Code
repetitive peak voltage
non-repetitive peak voltage
@ T
J
= T
J
max.
V
V
mA
04
400
500
08
800
900
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Frequency
Units
50Hz
770
660
1220
1160
5450
4960
400Hz
730
600
1270
1090
2760
2420
1000Hz
600
490
1210
1040
1600
1370
A
2500Hz
350
270
860
730
800
680
Recovery voltage Vr
50
50
50
50
50
50
Voltage before turn-on Vd
V
DRM
V
DRM
V
DRM
Rise of on-state current di/dt
50
50
-
-
-
-
A/
s
Heatsink temperature
40
55
40
55
40
55
C
Equivalent values for RC circuit
47
/ 0.22F
47
/ 0.22F
47
/ 0.22F
I
TM
180
o
el
180
o
el
100
s
I
TM
I
TM
Current Carrying Capability
V
I
T(AV)
Max. average on-state current
370 (130)
A
180 conduction, half sine wave
@ Heatsink temperature
55 (85)
C
double side (single side) cooled
I
T(RMS)
Max. RMS on-state current
690
DC@ 25C heatsink temperature double side cooled
I
TSM
Max. peak, one half cycle,
4900
t = 10ms
No voltage
non-repetitive surge current
5130
A
t = 8.3ms
reapplied
4120
t = 10ms
100% V
RRM
4310
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
120
t = 10ms
No voltage
Initial T
J
= T
J
max
110
t = 8.3ms
reapplied
85
t = 10ms
100% V
RRM
78
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
1200
KA
2
s
t = 0.1 to 10ms, no voltage reapplied
Parameter
ST183C..C
Units
Conditions
On-state Conduction
KA
2
s
ST183C..C Series
3
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Bulletin I25178 rev. B 04/00
V
TM
Max. peak on-state voltage
1.80
I
TM
= 600A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
Low level value of forward
slope resistance
r
t
2
High level value of forward
slope resistance
I
H
Maximum holding current
600
T
J
= 25C, I
T
> 30A
I
L
Typical latching current
1000
T
J
= 25C, V
A
= 12V, Ra = 6
, I
G
= 1A
Parameter
ST183C..C
Units
Conditions
On-state Conduction
1.40
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
1.45
(I >
x I
T(AV)
), T
J
= T
J
max.
V
0.67
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
0.58
(I >
x I
T(AV)
), T
J
= T
J
max.
m
mA
di/dt
Max. non-repetitive rate of rise
T
J
= T
J
max, V
DRM
= rated V
DRM
of turned-on current
I
TM
= 2 x di/dt
T
J
= 25C, V
DM
= rated V
DRM
,
I
TM
= 50A DC, t
p
= 1s
Resistive load, Gate pulse: 10V, 5
source
T
J
= T
J
max,
I
TM
= 300A, commutating di/dt
= 20A/s
V
R
= 50V, t
p
= 500s, dv/dt: see table in device code
Switching
Parameter
ST183C..C
Units
Conditions
1000
A/s
t
d
Typical delay time
1.1
Min
Max
dv/dt
Maximum critical rate of rise of
T
J
= T
J
max. linear to 80% V
DRM
, higher value
off-state voltage
available on request
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Parameter
ST183C..C
Units
Conditions
Blocking
500
V/
s
40
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
60
P
G(AV)
Maximum average gate power
10
I
GM
Max. peak positive gate current
10
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
I
GD
Max. DC gate current not to trigger
20
mA
V
GD
Max. DC gate voltage not to trigger
0.25
V
Triggering
Parameter
ST183C..C
Units
Conditions
20
5
V
T
J
= T
J
max, t
p
5ms
200
mA
3
V
T
J
= 25C, V
A
= 12V, Ra = 6
T
J
= T
J
max, rated V
DRM
applied
t
q
Max. turn-off time
10
20
s
W
T
J
= T
J
max, f = 50Hz, d% = 50
ST183C..C Series
4
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Bulletin I25178 rev. B 04/00
T
J
Max. operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJ-hs
Max. thermal resistance,
0.17
DC operation single side cooled
junction to heatsink
0.08
DC operation double side cooled
R
thC-hs
Max. thermal resistance,
0.033
DC operation single side cooled
case to heatsink
0.017
DC operation double side cooled
F
Mounting force, 10%
4900
N
(500)
(Kg)
wt
Approximate weight
50
g
Parameter
ST183C..C
Units
Conditions
K/W
Thermal and Mechanical Specification
C
Case style
TO - 200AB (A-PUK)
See Outline Table
K/W
Single Side Double Side
Single Side Double Side
180
0.015
0.016
0.011
0.011
120
0.018
0.019
0.019
0.019
90
0.024
0.024
0.026
0.026
K/W
T
J
= T
J
max.
60
0.035
0.035
0.036
0.037
30
0.060
0.060
0.060
0.061
Sinusoidal conduction
Rectangular conduction
Conduction angle
Units
Conditions
R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Ordering Information Table
5
6
8
9
ST
18
3
C
08
C
H
K
1
3
4
10
7
Device Code
1
2
dv/dt - t
q
combinations available
dv/dt (V/s)
20
50
100
200
400
10
CN
DN
EN
FN*
HN
12
CM
DM
EM
FM
HM
15
CL
DL
EL
FL*
HL
18
CP
DP
EP
FP
HP
20
CK
DK
EK
FK
HK
t
q
(s)
*
Standard part number.
All other types available only on request.
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn off
4
- C = Ceramic Puk
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
- C = Puk Case TO-200AB (A-PUK)
7
- Reapplied dv/dt code (for t
q
test condition)
8
- t
q
code
9
- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Critical dv/dt:
None = 500V/sec (Standard value)
L
= 1000V/sec (Special selection)
10
ST183C..C Series
5
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Bulletin I25178 rev. B 04/00
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
4 0
5 0
6 0
7 0
8 0
9 0
1 00
1 10
1 20
1 30
0
40
8 0
12 0
1 60
2 00
24 0
30
60
90
120
18 0
Average O n-state Current (A)
C o nd uctio n A ng le
M
a
x
i
m
u
m A
l
l
o
w
a
bl
e
He
at
s
i
n
k
T
e
m
p
e
r
at
u
r
e
(
C
)
ST18 3C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W
thJ -h s
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
5 0
1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 3 5 0 4 0 0
D C
3 0
6 0
9 0
1 2 0
1 8 0
A v e ra g e O n -st a te C u rre n t ( A )
C on d uc tion Pe rio d
M
a
x
i
m
u
m
A
l
l
o
w
a
bl
e
He
at
s
i
n
k
T
e
m
p
e
r
at
u
r
e
(
C)
S T 1 8 3 C ..C Se rie s
( S in g le Sid e C o o le d )
R ( D C ) = 0 .1 7 K / W
th J- hs
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Outline Table
DIA. MAX.
4.75 (0.19)
28 (1.10)
6.5 (0.26)
19 (0.75)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
25 5
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
42 (1.65) MAX.
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
ST183C..C Series
6
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Bulletin I25178 rev. B 04/00
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
7 0 0
D C
3 0
6 0
9 0
1 2 0
1 8 0
A v e ra g e O n -st a t e C u rre n t ( A )
Co n d uc tion Pe rio d
M
a
x
i
mu
m
A
l
l
o
w
a
b
l
e
H
e
a
t
s
i
n
k
T
e
mp
e
r
a
t
u
r
e
(
C)
S T 1 8 3 C ..C Se rie s
( D o u b le S id e C o o le d )
R ( D C ) = 0 .0 8 K / W
th J -hs
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
5 0 1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 3 5 0 4 0 0 4 5 0
3 0
6 0
9 0
1 2 0
1 8 0
A v e ra g e O n -st a t e C u rre n t ( A )
C o nd uc tion A ng le
M
a
xi
m
u
m
A
l
l
o
w
a
bl
e
He
at
s
i
n
k
T
e
m
p
e
r
a
t
u
r
e
(
C)
ST 1 8 3 C ..C S e rie s
( D o u b le Sid e C o o le d )
R ( D C ) = 0 .0 8 K / W
thJ -hs
0
20 0
40 0
60 0
80 0
1 00 0
1 20 0
1 40 0
0
10 0
2 00
3 00
40 0
50 0
6 00
70 0
DC
180
120
90
60
30
RM S Lim it
Co n d u ctio n Pe riod
Ma
x
i
m
u
m
A
v
e
r
a
g
e
O
n
-
s
ta
te
Po
w
e
r
L
o
s
s
(
W
)
Averag e On -state Curren t (A)
ST18 3C..C Series
T = 125C
J
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
7 0 0
8 0 0
9 0 0
1 0 0 0
0
5 0 1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 3 5 0 4 0 0 4 5 0
1 8 0
1 2 0
9 0
6 0
3 0
R M S L im it
C o nd uc tio n A ng le
M
a
x
i
m
u
m
A
v
e
r
a
g
e
O
n
-
s
ta
te
P
o
w
e
r
L
o
s
s
(
W
)
A v e ra g e O n -st a te C u rre n t ( A )
S T 1 8 3 C ..C Se rie s
T = 1 2 5 C
J
20 0 0
25 0 0
30 0 0
35 0 0
40 0 0
45 0 0
1
1 0
1 00
N um b e r O f E q ua l A m p litud e H a lf C y c le C urre nt Pulse s (N )
P
e
ak
Hal
f
S
i
n
e
W
a
v
e
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
In itial T = 125 C
@ 6 0 Hz 0.0083 s
@ 5 0 Hz 0.0100 s
J
ST183 C..C Series
At An y Rated L oad Con dition And W ith
Rated V Applied Followin g Surge.
RRM
2 0 0 0
2 5 0 0
3 0 0 0
3 5 0 0
4 0 0 0
4 5 0 0
5 0 0 0
0 .0 1
0 .1
1
P u lse T ra in D u ra tio n ( s)
V e rsu s P ulse T ra in D u ra t io n . C o n t ro l
O f C o n d u c t io n M a y N o t B e M a in t a in e d .
P
e
ak
Hal
f
S
i
n
e
W
a
v
e
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
In it ia l T = 1 2 5 C
N o V o lta g e Re a p p lie d
Ra t e d V R e a p p lie d
RRM
J
ST 1 8 3 C ..C S e rie s
M a x im u m N o n R e p e t it iv e S urg e C u rre n t
ST183C..C Series
7
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Bulletin I25178 rev. B 04/00
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Fig. 13 - Frequency Characteristics
1 0 0
1 0 0 0
10 0 0 0
1
1 .5
2
2. 5
3
3 .5
4
4 .5
T = 25 C
J
I
n
s
t
a
n
ta
n
e
o
u
s
O
n
-
s
ta
te
C
u
r
r
e
n
t
(
A
)
Ins tan taneous O n-state Voltage (V)
T = 12 5C
J
ST 183C..C Series
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
0
1 0 2 0 3 0 4 0 50 6 0 70 80 9 0 10 0
M
a
x
i
m
u
m
R
e
ve
rse
R
e
c
o
v
e
ry
C
u
r
r
e
n
t
-
I
r
r
(
A
)
Rate O f Fall Of Forw ard Curr en t - di/dt (A/ s)
I = 5 00 A
30 0 A
2 00 A
1 00 A
50 A
ST18 3C..C Series
T = 125 C
J
T M
0
50
1 00
1 50
2 00
2 50
0
10 2 0 3 0 40 5 0 60 7 0 8 0 9 0 1 0 0
I = 50 0 A
3 00 A
2 00 A
10 0 A
50 A
Rate O f Fa ll O f O n -state Current - di/dt (A/s)
M
a
x
i
m
u
m
R
e
ve
r
s
e
R
e
c
o
ve
ry
C
h
a
r
g
e
-
Q
rr (
C
)
ST1 83 C..C Series
T = 125 C
J
TM
0 .0 0 1
0 .0 1
0 .1
1
0 .0 0 1
0 .0 1
0 .1
1
1 0
Sq u a r e W a v e Pu lse D u ra t io n ( s)
th
J
-
h
s
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
Z
(
K
/
W
)
ST 1 8 3 C ..C Se rie s
S t e a d y S ta t e V a lue
R = 0 .1 7 K / W
( S in gle S id e C o o le d )
R = 0 .0 8 K / W
( D o u b le Sid e C o o le d )
( D C O p e ra t io n )
th J -hs
th J -hs
1 E 1
1 E 2
1 E 3
1 E 4
50 H z
40 0
2 50 0
1 00
P u lse B ase w id t h ( s)
10 00
1 50 0
3 0 00
2 00
5 00
5 00 0
ST1 83 C..C Serie s
Sinus oid a l p ulse
T = 55 C
C
Snub b e r c irc uit
R = 47 oh m s
C = 0.22 F
V = 8 0% V
s
s
D
D RM
10 00 0
tp
1 E 1
1 E 2
1 E 3
1 E 4
1 E 1
1 E 2
1 E 3
1 E 4
50 H z
40 0
2 50 0
1 00
P u lse B a se w id th ( s)
P
e
a
k
O
n
-
s
t
a
t
e
C
u
rre
n
t
(
A
)
1 00 0
1 50 0
3 0 00
20 0
50 0
5 00 0
Snub b er c ircu it
R = 47 o hm s
C = 0 .22 F
V = 80 % V
s
s
D
D RM
ST183 C. .C Se ries
Sinus o id a l p uls e
T = 40 C
C
t p
1 E 4
1 00 0 0
ST183C..C Series
8
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Bulletin I25178 rev. B 04/00
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
1 E 1
1 E 2
1 E 3
1 E 4
1 E 1
1 E 2
1 E 3
1 E 4
50 H z
400
2 50 0
10 0
1 00 0
1 50 0
3 0 00
2 00
5 00
P u lse B ase w id t h ( s)
P
e
a
k
O
n
-
s
ta
te
C
u
r
r
e
n
t
(
A
)
Snub b e r c irc uit
R = 4 7 o hm s
C = 0 .22 F
V = 8 0% V
s
s
D
D R M
ST18 3C ..C Se rie s
Tra p e zoid a l p ulse
T = 4 0C
d i/d t = 1 00 A/s
C
5 00 0
tp
10 00 0
1 E 4
1 E 2
1 E 3
1 E 4
1 E 1
1 E 2
1 E 3
1 E 4
5 0 H z
40 0
2 500
1 00
10 00
1 50 0
3 00 0
2 00
50 0
P u lse B a se w id th ( s)
P
e
a
k
O
n
-
s
ta
t
e
C
u
r
r
e
n
t (
A
)
ST18 3C ..C Se rie s
Tra p ezo id a l p ulse
T = 40C
d i/d t = 5 0A/s
C
Snub b er c irc uit
R = 47 o hm s
C = 0 .22 F
V = 8 0% V
s
s
D
D RM
5 0 00
tp
1 E 4
1 E 1
1 E 2
1 E 3
1 E 4
50 H z
40 0
2 50 0
10 0
Pu lse B ase w id th ( s)
1 000
15 00
2 00
50 0
ST183 C.. C Serie s
Tra p ezo id a l p ulse
T = 55 C
d i/d t = 10 0A/s
C
3 00 0
Snub b er circuit
R = 47 o hm s
C = 0 .22 F
V = 8 0% V
s
s
D
D RM
tp
50 00
10 00 0
1 E 1
1 E 1
1 E 2
1 E 3
1 E 4
50 H z
40 0
2 50 0
100
P u lse Ba se w id th ( s)
10 00
1 50 0
200
500
ST1 83 C..C Series
Tra p e zoid a l p uls e
T = 55 C
d i/d t = 50A /s
C
Snu b b e r c ircuit
R = 47 ohm s
C = 0 .22 F
V = 80 % V
s
s
D
D RM
3 000
tp
5 00 0
1 E 1
1 E 1
1 E 2
1 E 3
1 E 4
Pu lse B ase w id t h ( s)
20 jo ules p e r p uls e
2
1
0.5
0 .3
0. 2
0 .1
1 0
4
ST18 3C. .C Se ries
Re cta n gula r p ulse
d i/d t = 5 0A/s
tp
1 E 1
1 E 1
1 E 2
1 E 3
1 E 4
1 E 5
1 E 1
1 E 2
1 E 3
1 E 4
P ulse Ba se w id th ( s)
20 jo ules p e r p uls e
2
1
0. 5
0.3
0. 2
0 .1
1 0
P
e
a
k
O
n
-
s
ta
te
C
u
r
r
e
n
t
(
A
)
ST1 83C ..C Serie s
Sinus oid a l p uls e
4
tp
1 E 4
ST183C..C Series
9
www.irf.com
Bulletin I25178 rev. B 04/00
Fig. 17 - Gate Characteristics
0 . 1
1
1 0
1 0 0
0 . 0 0 1
0 . 0 1
0 . 1
1
1 0
1 0 0
V G D
IG D
( b )
(a )
Tj
=
2
5
C
T
j
=
1
25
C
Tj
=
-
4
0
C
( 1 )
( 2 )
In st a n t a n e o u s G a t e C u rre n t ( A )
I
n
st
an
t
a
n
e
o
u
s
G
a
t
e
V
o
l
t
a
g
e
(
V
)
Re c ta n g ula r g a t e p ulse
a ) R e c o m m e n d e d lo a d lin e f o r
b ) R e c o m m e n d e d lo a d lin e fo r
< = 3 0 % ra t e d di/ dt : 1 0 V , 1 0 o h m s
rat e d d i/d t : 2 0 V , 1 0 o h m s; tr <= 1 s
tr< = 1 s
( 1 ) PG M = 1 0 W , tp = 2 0 m s
( 2 ) PG M = 2 0 W , tp = 1 0 m s
( 3 ) PG M = 4 0 W , tp = 5 m s
( 4 ) PG M = 6 0 W , tp = 3 . 3 m s
( 3 )
D e v ic e : ST 1 8 3 C . .C S e rie s F re q u e n c y L im ite d b y PG (A V )
( 4 )
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