Features
Center amplifying gate
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
I
T(AV)
300
A
@ T
C
65
C
I
T(RMS)
471
A
I
TSM
@
50Hz
7950
A
@ 60Hz
8320
A
I
2
t
@
50Hz
316
KA
2
s
@ 60Hz
288
KA
2
s
V
DRM
/V
RRM
400 to 1200
V
t
q
10 - 20
s
T
J
- 40 to 125
C
Parameters
ST303S
Units
Major Ratings and Characteristics
case style
TO-209AE (TO-118)
ST303S SERIES
INVERTER GRADE THYRISTORS
Stud Version
300A
1
Bulletin I25173 rev. C 03/03
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ST303S Series
2
Bulletin I25173 rev. C 03/03
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Voltage
V
DRM
/V
RRM
, maximum
V
RSM
, maximum
I
DRM
/I
RRM
max.
Type number
Code
repetitive peak voltage
non-repetitive peak voltage
@ T
J
= T
J
max.
V
V
mA
04
400
500
08
800
900
12
1200
1300
ST303S
50
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Frequency
Units
50Hz
670
470
1050
940
5240
4300
400Hz
480
330
1021
710
1800
1270
1000Hz
230
140
760
470
730
430
A
2500Hz
35
-
150
-
90
-
Recovery voltage Vr
50
50
50
50
50
50
Voltage before turn-on Vd
V
DRM
V
DRM
V
DRM
Rise of on-state current di/dt
50
50
-
-
-
-
A/
s
Case temperature
40
65
40
65
40
65
C
Equivalent values for RC circuit
10
/ 0.47F
10
/ 0.47F
10
/ 0.47F
I
TM
180
o
el
180
o
el
100
s
I
TM
I
TM
Current Carrying Capability
V
I
T(AV)
Max. average on-state current
300
A
180 conduction, half sine wave
@ Case temperature
65
C
I
T(RMS)
Max. RMS on-state current
471
DC @ 45C case temperature
I
TSM
Max. peak, one half cycle,
7950
t = 10ms
No voltage
non-repetitive surge current
8320
A
t = 8.3ms
reapplied
6690
t = 10ms
100% V
RRM
7000
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
316
t = 10ms
No voltage
Initial T
J
= T
J
max
288
t = 8.3ms
reapplied
224
t = 10ms
100% V
RRM
204
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
3160
KA
2
s
t = 0.1 to 10ms, no voltage reapplied
Parameter
ST303S
Units Conditions
On-state Conduction
KA
2
s
ST303S Series
3
Bulletin I25173 rev. C 03/03
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V
TM
Max. peak on-state voltage
2.16
I
TM
= 1255A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
Low level value of forward
slope resistance
r
t
2
High level value of forward
slope resistance
I
H
Maximum holding current
600
T
J
= 25C, I
T
> 30A
I
L
Typical latching current
1000
T
J
= 25C, V
A
= 12V, Ra = 6
,
I
G
= 1A
Parameter
ST303S
Units
Conditions
On-state Conduction
1.44
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
1.46
(I >
x I
T(AV)
), T
J
= T
J
max.
V
0.57
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
0.56
(I >
x I
T(AV)
), T
J
= T
J
max.
m
mA
di/dt
Max. non-repetitive rate of rise
T
J
= T
J
max, V
DRM
= rated V
DRM
of turned-on current
I
TM
= 2 x di/dt
T
J
= 25C, V
DM
= rated V
DRM
,
I
TM
= 50A DC, t
p
= 1s
Resistive load, Gate pulse: 10V, 5
source
T
J
= T
J
max,
I
TM
= 550A, commutating di/dt
= 40A/s
V
R
= 50V, t
p
= 500s, dv/dt = 200V/s
Switching
Parameter
ST303S
Units
Conditions
1000
A/s
t
d
Typical delay time
0.80
s
dv/dt
Maximum critical rate of rise of
T
J
= T
J
max, linear to 80% V
DRM
, higher value
off-state voltage
available on request
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Parameter
ST303S
Units
Conditions
Blocking
500
V/
s
50
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
60
P
G(AV)
Maximum average gate power
10
I
GM
Max. peak positive gate current
10
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
I
GD
Max. DC gate current not to trigger
20
mA
V
GD
Max. DC gate voltage not to trigger
0.25
V
Triggering
Parameter
ST303S
Units
Conditions
20
5
V
T
J
= T
J
max, t
p
5ms
200
mA
3
V
T
J
= 25C, V
A
= 12V, Ra = 6
T
J
= T
J
max, rated V
DRM
applied
t
q
Max. turn-off time
10 - 20
W
T
J
= T
J
max, f = 50Hz, d% = 50
ST303S Series
4
Bulletin I25173 rev. C 03/03
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T
J
Max. junction operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJC
Max. thermal resistance, junction to case
0.10
DC operation
R
thCS
Max. thermal resistance, case to heatsink
0.03
Mounting surface, smooth, flat and greased
T
Mounting torque, 10%
48.5
Nm
(425)
(Ibf-in)
wt
Approximate weight
535
g
Case style
TO-209AE (TO-118)
See Outline Table
Parameter
ST303S
Units
Conditions
Thermal and Mechanical Specifications
C
K/W
Non lubricated threads
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Ordering Information Table
5
6
8
9
ST
30
3
S
12
P
F
K
0
3
4
7
Device Code
1
2
180
0.011
0.008
120
0.013
0.014
90
0.017
0.018
K/W
T
J
= T
J
max.
60
0.025
0.026
30
0.041
0.042
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn off
4
- S = Compression bonding Stud
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Ratings table)
6
- P = Stud base 3/4" 16UNF-2A
7
- Reapplied dv/dt code (for t
q
test condition)
8
- t
q
code
9
- 0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
dv/dt - t
q
combinations available
dv/dt (V/s)
200
t
q
(s)
10
FN
up to 800V
20
FK
t
q
(s)
only for
20
FK
1000/1200V
ST303S Series
5
Bulletin I25173 rev. C 03/03
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Outline Table
RED CATHODE
RED SILICON RUBBER
10.5 (0.41)
24
5 (
9
.
6
5)
1
0
(
0
.
3
9)
WHITE GATE
4.3 (0.17) DIA.
CERAMIC HOUSING
WHITE SHRINK
NOM.
47
(
1
.
8
5
)
MAX
.
245
(
9
.
6
5
)
38 (1.50)
MAX. DIA.
22 (0.87) MAX.
MAX
.
21
(
0
.
8
2
)
M
A
X
.
SW 45
2
FLEXIBLE LEAD
4.5 (0.18) MAX.
C.S. 50mm
(0.078 s.i.)
2
5
5 (
1
0.
04
)
RED SHRINK
22
(0
.8
6)
M
IN
.
49 (1.92) MAX.
3/4"16 UNF-2A
27.
5 (
1
.
0
8
)
9.
5
(0
.3
7)
M
IN
.
Fast-on Terminals
Case Style TO-209AE (TO-118)
All dimensions in millimeters (inches)
AMP. 280000-1
REF-250
* FOR METRIC DEVICE: M24 X 1.5 - LENGHT 21 (0.83) MAX.
CONTACT FACTORY
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
60
70
80
90
100
110
120
130
0
50
100 150 200 250 300 350
M
a
x
i
m
u
m
A
l
l
o
w
abl
e
C
a
s
e
T
e
m
p
e
r
at
u
r
e
(
C
)
30
60
90
120
180
Average On-state Current (A)
Conduc tion Angle
ST303S Series
R (DC) = 0.10 K/ W
thJC
40
50
60
70
80
90
100
110
120
130
0
100
200
300
400
500
DC
30
60
90
120
180
Average On-state Current (A)
M
a
x
i
mu
m A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
mp
er
a
t
u
r
e
(
C)
Conduction Period
ST303S Series
R (DC) = 0.10 K/ W
thJC
ST303S Series
6
Bulletin I25173 rev. C 03/03
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Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
3000
3500
4000
4500
5000
5500
6000
6500
7000
1
10
100
Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N)
Pe
a
k
H
a
l
f
S
in
e
W
a
v
e
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
Initial T = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST303S Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
0.01
0.1
1
Pulse Train Duration (s)
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
P
e
a
k
H
a
l
f
S
i
ne
W
a
v
e
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
Initial T = 125C
No Voltage Reapplied
Rated V Reapplied
RRM
J
ST303S Series
Maximum Non Repetitive Surge Current
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
25
50
75
100
125
Maximum Allowable Ambient Temperature (C)
R
=
0.0
1 K
/W
- D
elt
a R
th
SA
0.3 K/
W
0.5 K/ W
0.2 K
/ W
0.16
K/W
0.12
K/W
0.0
6 K
/ W
0.0
8 K
/W
0.0
3 K
/W
0
100
200
300
400
500
600
0
50
100
150
200
250
300
180
120
90
60
30
RMS Limit
Conduction Angle
M
a
x
i
mu
m A
v
er
a
g
e
O
n
-
s
t
a
t
e
P
o
w
e
r
L
o
s
s
(
W
)
Average On-state Current (A)
ST303S Series
T = 125C
J
25
50
75
100
125
Maximum Allowable Ambient Temperature (C)
R
= 0
.01
K/W
- D
elta
R
thS
A
0.3 K/W
0.5 K/W
0.2 K/
W
0.12
K/W
0.06
K/W
0.0
3 K
/ W
0
100
200
300
400
500
600
700
800
900
0 50 100 150 200 250 300 350 400 450 500
DC
180
120
90
60
30
RMS Limit
Conduction Period
M
a
x
i
mu
m A
v
e
r
a
g
e
O
n
-
s
t
a
t
e
P
o
w
e
r
L
o
s
s
(
W
)
Average On-state Current (A)
ST303S Series
T = 125C
J
ST303S Series
7
Bulletin I25173 rev. C 03/03
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Fig. 8 - Thermal Impedance Z
thJC
Characteristic
Fig. 9 - Reverse Recovered Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
Fig. 7 - On-state Voltage Drop Characteristics
100
1000
10000
1
2
3
4
5
6
7
8
T = 25C
J
I
n
s
t
a
n
t
a
ne
ou
s
O
n
-
s
t
a
te C
u
r
r
e
n
t
(A
)
Instantaneous On-state Voltage (V)
T = 125C
J
ST303S Series
20
40
60
80
100
120
140
160
180
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/ dt (A/ s)
I = 500 A
300 A
200 A
100 A
50 A
M
a
x
i
m
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rr
e
n
t
-
I
r
r
(
A
)
ST303S Series
T = 125 C
J
TM
80
100
120
140
160
180
200
220
240
260
280
300
320
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/ dt (A/ s)
I = 500 A
300 A
200 A
100 A
50 A
M
a
x
i
m
u
m
Re
v
e
r
s
e
Re
c
o
v
e
r
y
C
h
a
r
g
e
-
Q
r
r
(
C
)
ST303S Series
T = 125 C
J
TM
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
th
J
C
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
Z
(
K
/
W
)
Steady State Value
R = 0.10 K/ W
(DC Operation)
thJC
ST303S Series
1E1
1E2
1E3
1E4
50 Hz
400
100
Pulse Basewidth (s)
1000
1500
200
500
ST303S Series
Sinusoidal pulse
T = 65C
C
Snubber circuit
R = 10 ohms
C = 0.47 F
V = 80% V
s
s
D
DRM
tp
1E1
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
50 Hz
400
2500
100
Pulse Basewidth (s)
Pe
a
k
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
1000
1500
200
500
Snubber circ uit
R = 10 ohms
C = 0.47 F
V = 80% V
s
s
D
DRM
2000
ST303S Series
Sinusoidal pulse
T = 40C
C
1E4
tp
Fig. 11 - Frequency Characteristics
ST303S Series
8
Bulletin I25173 rev. C 03/03
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1E1
1E2
1E3
1E4
1E5
1E1
1E2
1E3
1E4
Pulse Basewidth (s)
20 joules p er pulse
2
1
P
e
a
k
On
-
s
tate
C
u
r
r
e
n
t
(
A
)
0.5
10
5
3
0.4
ST303S Series
Sinusoidal pulse
tp
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (s)
20 joules per pulse
2
1
0.5
10
5
ST303S Series
Rectangular pulse
d i/dt = 50A/ s
tp
1E1
3
0.4
Fig. 13 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
1E0
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
100
1500
200
Pulse Basewidth (s)
P
e
a
k
O
n
-
s
ta
te
Cu
r
r
en
t (
A
)
2500
400
1000
50 Hz
500
Snubber circuit
R = 10 ohms
C = 0.47 F
V = 80% V
s
s
D
DRM
ST303S Series
Trapezoidal pulse
T = 40C
di/dt = 50A/ s
C
1E4
2000
1E1
1E2
1E3
1E4
50 Hz
400
100
1000
1500
200
Pulse Basewidth (s)
500
Snubber c ircuit
R = 10 ohms
C = 0.47 F
V = 80% V
s
s
D
DRM
ST303S Series
Trapezoidal pulse
T = 65C
di/ dt = 50A/s
C
2000
1E1
1E0
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
50 Hz
400
2500
100
1000
1500
200
Pulse Basewidth (s)
P
e
a
k
O
n
-
s
ta
te
Cu
r
r
en
t (
A
)
2000
Snubber circuit
R = 10 ohms
C = 0.47 F
V = 80% V
s
s
D
DRM
ST303S Series
Trapezoidal pulse
T = 40C
di/dt = 100A/s
C
tp
1E4
500
1E1
1E2
1E3
1E4
50 Hz
400
100
1000
1500
200
Pulse Basewidth (s)
ST303S Series
Trapezoidal pulse
T = 65C
di/ dt = 100A/ s
C
Snub ber circ uit
R = 10 ohms
C = 0.47 F
V = 80% V
s
s
D
DRM
2000
tp
500
1E1
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
ST303S Series
9
Bulletin I25173 rev. C 03/03
www.irf.com
Fig. 15 - Gate Characteristics
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
Tj
=
2
5
C
Tj
=
1
2
5
C
Tj
=
-
4
0
C
(1)
(2)
Instantaneous Gate Current (A)
I
n
s
t
a
n
t
a
ne
ou
s
G
a
t
e
V
o
l
t
a
g
e
(
V
)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
rated di/ dt : 20V, 10ohms; tr<=1 s
tr<=1 s
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(3)
Device: ST303S Series
(4)
Frequency Limited by PG(AV)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03 /03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
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