IS61SF6436

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A
04/17/01

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.

FEATURES

· Fast access times: 8.5 ns, 9 ns, 10 ns

· Internal self-timed write cycle

· Individual Byte Write Control and Global Write

· Clock controlled, registered address, data and

control

· PentiumTM or linear burst sequence control

using MODE input

· Three chip enables for simple depth expansion

and address pipelining

· Common data inputs and data outputs

· Power-down control by ZZ input

· JEDEC 100-Pin TQFP and PQFP package

· Single +3.3V power supply

· Two Clock enables and one Clock disable to

eliminate multiple bank bus contention.

· Control pins mode upon power-up:

MODE in interleave burst mode
ZZ in normal operation mode
These control pins can be connected to GND

or V

CCQ

to alter their power-up state

DESCRIPTION

The

ISSI

IS61SF6436 is a high-speed, low-power synchro-

nous static RAM designed to provide a burstable, high-
performance, secondary cache for the i486TM, PentiumTM,
680X0TM, and PowerPCTM microprocessors. It is organized
as 65,536 words by 36 bits, fabricated with

ISSI

's advanced

CMOS technology. The device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs into
a single monolithic circuit. All synchronous inputs pass through
registers controlled by a positive-edge-triggered single clock
input.

Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be from one to
four bytes wide as controlled by the write control inputs.

Separate byte enables allow individual bytes to be written.
BW1 controls DQP1 and DQ1-DQ8, BW2 controls DQP2 and
DQ9-DQ16,

BW3 controls DQP3 and DQ17-DQ24, BW4

controls DQP4 and DQ25-DQ32, conditioned by

BWE being

LOW. A LOW on

GW input would cause all bytes to be written.

Bursts can be initiated with either

ADSP (Address Status

Processor) or

ADSC (Address Status Cache Controller) input

pins. Subsequent burst addresses can be generated inter-
nally by the IS61SF6436 and controlled by the

ADV (burst

address advance) input pin.

Asynchronous signals include output enable (

OE), sleep mode

input (ZZ), clock (CLK) and burst mode input (MODE). A HIGH
input on the ZZ pin puts the SRAM in the power-down state.
When ZZ is pulled LOW (or no connect), the SRAM normally
operates after three cycles of the wake-up period. A LOW
input, i.e., GND

, on MODE pin selects LINEAR Burst. A V

CCQ

(or no connect) on MODE pin selects INTERLEAVED Burst.

64K x 36 SYNCHRONOUS
FLOW-THROUGH STATIC RAM

APRIL 2001

IS61SF6436

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A

04/17/01

BLOCK DIAGRAM

BINARY

COUNTER

A15-A0

BW1

CLR

CLK

MODE

A0'

A1'

CLK

ADV

ADSC

ADSP

ADDRESS

REGISTER

CLK

DQP4

DQ31-DQ24

BYTE WRITE

REGISTERS

CLK

DQP3

DQ23-DQ16

BYTE WRITE

REGISTERS

CLK

DQP2

DQ15-DQ8

BYTE WRITE

REGISTERS

CLK

DQP1

DQ8-DQ0

BYTE WRITE

REGISTERS

CLK

ENABLE

REGISTER

CLK

ENABLE

DELAY

REGISTER

CLK

BWE

BW4

CE2

BW2

BW3

64K x 36

MEMORY

ARRAY

INPUT

REGISTERS

CLK

DATA[35.0]

IS61SF6436

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A
04/17/01

PIN CONFIGURATION

100-Pin TQFP and PQFP (Top View)

PIN DESCRIPTIONS

A0-A15

Address Inputs

CLK

Clock

ADSP

Processor Address Status

ADSC

Controller Address Status

ADV

Burst Address Advance

BW1-BW4

Synchronous Byte Write Enable

BWE

Byte Write Enable

Global Write Enable

CE, CE2, CE2

Synchronous Chip Enable

Output Enable

DQ1-DQ32

Data Input/Output

DQP1-DQP4

Parity Inputs/Outputs

Sleep Mode

MODE

Burst Sequence Mode

+3.3V Power Supply

GND

Ground

CCQ

Isolated Output Buffer Supply:
+3.3V

GND

Isolated Output Buffer Ground

DQP2
DQ16
DQ15
VCCQ
GNDQ
DQ14
DQ13
DQ12
DQ11
GNDQ
VCCQ
DQ10
DQ9
GND
NC
VCC
ZZ
DQ8
DQ7
VCCQ
GNDQ
DQ6
DQ5
DQ4
DQ3
GNDQ
VCCQ
DQ2
DQ1
DQP1

CE2

BW4

BW3

BW2

BW1

CE2

VCC

GND

CLK

BWE

ADSC

ADSP

ADV

DQP3

DQ17
DQ18

VCCQ

GNDQ

DQ19
DQ20
DQ21
DQ22

GNDQ

VCCQ

DQ23
DQ24

GNDQ

VCC

GND

DQ25
DQ26

VCCQ

GNDQ

DQ27
DQ28
DQ29
DQ30

GNDQ

VCCQ

DQ31
DQ32

DQP4

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30

80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51

100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81

31 32 33 34 35 36 37 38 39 40 41 42 43 44 45

MODE

GND

VCC

A10

A11

A12

A13

A14

A15

46 47 48 49 50

IS61SF6436

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A

04/17/01

TRUTH TABLE

ADDRESS

OPERATION

USED

CE2

ADSP ADSC

ADV WRITE

Deselected, Power-down

None

High-Z

Deselected, Power-down

None

High-Z

Deselected, Power-down

None

High-Z

Deselected, Power-down

None

High-Z

Deselected, Power-down

None

High-Z

Read Cycle, Begin Burst External

High-Z

Write Cycle, Begin Burst External

Read Cycle, Begin Burst External

High-Z

Read Cycle, Continue Burst

High-Z

Read Cycle, Continue Burst

High-Z

Write Cycle, Continue Burst

Read Cycle, Suspend Burst Current

High-Z

Read Cycle, Suspend Burst Current

High-Z

Write Cycle, Suspend Burst Current

Notes:
1. All inputs except

OE must meet setup and hold times for the Low-to-High transition of clock (CLK).

2. Wait states are inserted by suspending burst.
3. X means don't care.

WRITE=L means any one or more byte write enable signals (BW1-BW4) and BWE are LOW or GW is LOW.

WRITE=H means all byte write enable signals are HIGH.

4. For a Write operation following a Read operation,

OE must be HIGH before the input data required setup time and held HIGH

throughout the input data hold time.

ADSP LOW always initiates an internal READ at the Low-to-High edge of clock. A WRITE is performed by setting one or more
byte write enable signals and

BWE LOW or GW LOW for the subsequent L-H edge of clock.

PARTIAL TRUTH TABLE

FUNCTION

BWE

BW1

BW2

BW3

BW4

READ

WRITE Byte 1

WRITE All Bytes

IS61SF6436

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A
04/17/01

INTERLEAVED BURST ADDRESS TABLE (MODE = V

CCQ

or No Connect)

External Address

1st Burst Address

2nd Burst Address

3rd Burst Address

A1 A0

LINEAR BURST ADDRESS TABLE (MODE = GND

)

0,0

1,0

0,1

A1', A0' = 1,1

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol

Parameter

Value

Unit

BIAS

Temperature Under Bias

10 to +85

°C

STG

Storage Temperature

55 to +150

°C

Power Dissipation

1.8

OUT

Output Current (per I/O)

100

, V

OUT

Voltage Relative to GND for I/O Pins

0.5 to V

CCQ

+ 0.3

Voltage Relative to GND for

0.5 to 5.5

for Address and Control Inputs

Voltage on Vcc Supply Relatiive to GND

0.5 to 4.6

Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.

2. This device contains circuity to protect the inputs against damage due to high static voltages

or electric fields; however, precautions may be taken to avoid application of any voltage higher
than maximum rated voltages to this high-impedance circuit.

3. This device contains circuitry that will ensure the output devices are in High-Z at power up.

IS61SF6436

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A

04/17/01

OPERATING RANGE

Range

Ambient Temperature

Commercial

0°C to +70°C

3.3V +10%, 5%

Industrial

40°C to +85°C

3.3V +10%, 5%

DC ELECTRICAL CHARACTERISTICS

(1)

(Over Operating Range)

Symbol Parameter

Test Conditions

Min.

Max.

Unit

Output HIGH Voltage

= 5.0 mA

2.4

Output LOW Voltage

= 5.0 mA

0.4

Input HIGH Voltage

2.0

CCQ

+ 0.3

Input LOW Voltage

0.3

0.8

Input Leakage Current

GND - V

- V

CCQ

(2)

Com.

µA

Ind.

Output Leakage Current

GND - V

OUT

- V

CCQ

OE = V

Com.

µA

Ind.

POWER SUPPLY CHARACTERISTICS

(Over Operating Range)

-8.5

-9

-10

Symbol

Parameter

Test Conditions

Typ. Max.

Unit

AC Operating

Device Selected,

Com.

190 220

180 210

170 200

Supply Current

All Inputs = V

or V

Ind.

180 210

OE = V

Cycle Time · t

min.

Standby Current

Device Deselected,

Com.

= Max.,

Ind.

All Inputs = V

or V

CLK Cycle Time · t

min.

Power-Down Mode

ZZ = V

CCQ

, CLK Running

Com.

Current

All Inputs - GND + 0.2V

Ind.

or · V

0.2V

Note:
1. The MODE pin has an internal pullup. ZZ pin has an internal pull-down. This pin may be a No Connect, tied to GND, or tied to

CCQ

2. The MODE pin should be tied to Vcc or GND. It exhibits ±10 µA maximum leakage current when tied to - GND + 0.2V

or · Vcc 0.2V.

IS61SF6436

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A
04/17/01

CAPACITANCE

(1,2)

Symbol

Parameter

Conditions

Max.

Unit

Input Capacitance

= 0V

OUT

Input/Output Capacitance

OUT

= 0V

Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T

= 25°C, f = 1 MHz, Vcc = 3.3V.

AC TEST CONDITIONS

Parameter

Unit

Input Pulse Level

0V to 3.0V

Input Rise and Fall Times

1.5 ns

Input and Output Timing

1.5V

and Reference Level

Output Load

See Figures 1 and 2

AC TEST LOADS

Figure 2

317

5 pF

Including

jig and

scope

351

OUTPUT

3.3V

Output
Buffer

= 50

1.5V

30 pF

Figure 1

IS61SF6436

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A

04/17/01

READ CYCLE SWITCHING CHARACTERISTICS

(Over Operating Range)

-8.5

-9

-10

Symbol

Parameter

Min. Max.

Unit

Cycle Time

Clock High Time

4.5

Clock Low Time

4.5

Clock Access Time

8.5

KQX

(1)

Clock High to Output Invalid

2.5

KQLZ

(1,2)

Clock High to Output Low-Z

KQHZ

(1,2)

Clock High to Output High-Z

Address Setup Time

2.5

Address Status Setup Time

2.5

Write Setup Time

2.5

CES

Chip Enable Setup Time

2.5

AVS

Address Advance Setup Time

2.5

Address Hold Time

0.5

Address Status Hold Time

0.5

Write Hold Time

0.5

CEH

Chip Enable Hold Time

0.5

AVH

Address Advance Hold Time

0.5

Note:
1. Guaranteed but not 100% tested. This parameter is periodically sampled.
2. Tested with load in Figure 2.

IS61SF6436

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A
04/17/01

READ CYCLE TIMING

Single Read
Flow-through

High-Z

DATA

OUT

DATA

CE2

BW4-BW1

BWE

A15-A0

ADV

ADSC

ADSP

CLK

RD1

RD2

Unselected

Burst Read

KQX

RD3

CES

CEH

CES

CEH

CES

CEH

CE2 and CE2 only sampled with ADSP or ADSC

CE Masks ADSP

Unselected with CE2

KQLZ

KQHZ

ADSC initiate read

ADSP is blocked by CE inactive

AVH

AVS

Suspend Burst

IS61SF6436

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A

04/17/01

WRITE CYCLE SWITCHING CHARACTERISTICS

(Over Operating Range)

-8.5

-9

-10

Symbol

Parameter

Min. Max.

Unit

Cycle Time

Clock High Time

4.5

Clock Low Time

4.5

Address Setup Time

2.5

Address Status Setup Time

2.5

Write Setup Time

2.5

Data In Setup Time

2.5

CES

Chip Enable Setup Time

2.5

AVS

Address Advance Setup Time

2.5

Address Hold Time

0.5

Address Status Hold Time

0.5

Data In Hold Time

0.5

Write Hold Time

0.5

CEH

Chip Enable Hold Time

0.5

AVH

Address Advance Hold Time

0.5

IS61SF6436

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A
04/17/01

WRITE CYCLE TIMING

Single Write

DATA

OUT

DATA

CE2

BW4-BW1

BWE

A15-A0

ADV

ADSC

ADSP

CLK

WR1

WR2

Unselected

Burst Write

WR3

CES

CEH

CES

CEH

CES

CEH

CE2 and CE2 only sampled with ADSP or ADSC

CE Masks ADSP

Unselected with CE2

ADSC initiate Write

ADSP is blocked by CE inactive

AVH

AVS

ADV must be inactive for ADSP Write

WR1

WR2

WR3

High-Z

BW4-BW1 only are applied to first cycle of WR2

Write

IS61SF6436

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A

04/17/01

READ/WRITE CYCLE SWITCHING CHARACTERISTICS

(Over Operating Range)

-8.5

-9

-10

Symbol

Parameter

Min. Max.

Unit

Cycle Time

Clock High Time

4.5

Clock Low Time

4.5

Clock Access Time

8.5

KQX

(1)

Clock High to Output Invalid

2.5

KQLZ

(1,2)

Clock High to Output Low-Z

KQHZ

(1,2)

Clock High to Output High-Z

OEQX

(1)

Output Disable to Output Invalid

OEHZ

(1,2)

Output Disable to Output High-Z

Address Setup Time

2.5

Address Status Setup Time

2.5

Write Setup Time

2.5

CES

Chip Enable Setup Time

2.5

Address Hold Time

0.5

Address Status Hold Time

0.5

Write Hold Time

0.5

CEH

Chip Enable Hold Time

0.5

Note:
1. Guaranteed but not 100% tested. This parameter is periodically sampled.
2. Tested with load in Figure 2.

IS61SF6436

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A
04/17/01

READ/WRITE CYCLE TIMING

Single Read
Flow-through

Single Write

High-Z

DATA

OUT

DATA

CE2

BW4-BW1

BWE

A15-A0

ADV

ADSC

ADSP

CLK

RD1

WR1

Unselected

Burst Read

KQX

ADSP is blocked by CE inactive

RD2

RD3

CES

CEH

CES

CEH

CES

CEH

CE2 and CE2 only sampled with ADSP or ADSC

CE Masks ADSP

Unselected with CE2

OEQX

OEHZ

KQX

KQHZ

KQLZ

IS61SF6436

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A

04/17/01

SNOOZE AND RECOVERY CYCLE SWITCHING CHARACTERISTICS

(Over Operating Range)

-8.5

-9

-10

Symbol

Parameter

Min. Max.

Unit

Cycle Time

Clock High Time

4.5

Clock Low Time

4.5

Clock Access Time

8.5

KQX

(3)

Clock High to Output Invalid

2.5

KQLZ

(3,4)

Clock High to Output Low-Z

KQHZ

(3,4)

Clock High to Output High-Z

OEQ

Output Enable to Output Valid

OEQX

(3)

Output Disable to Output Invalid

OELZ

(3,4)

Output Enable to Output Low-Z

OEHZ

(3,4)

Output Disable to Output High-Z

Address Setup Time

2.5

Address Status Setup Time

2.5

CES

Chip Enable Setup Time

2.5

Address Hold Time

0.5

Address Status Hold Time

0.5

CEH

Chip Enable Hold Time

0.5

ZZS

ZZ Standby

(1)

cyc

ZZREC

ZZ Recovery

(2)

cyc

Notes:
1. The assertion of ZZ allows the SRAM to enter a lower power state than when deselected within the time specified. Data

retention is guaranteed when ZZ is asserted and clock remains active.

ADSC and ADSP must not be asserted for at least 2 cyc after leaving ZZ state.

3. Guaranteed but not 100% tested. This parameter is periodically sampled.
4. Tested with load in Figure 2.

IS61SF6436

ISSI

Integrated Silicon Solution, Inc. -- 1-800-379-4774

Rev. A

04/17/01

ORDERING INFORMATION

Commercial Range: 0°C to +70°C

Speed (ns)

Order Part Number

Package

8.5

IS61SF6436-8.5TQ

TQFP

8.5

IS61SF6436-8.5PQ

PQFP

IS61SF6436-9TQ

TQFP

IS61SF6436-9PQ

PQFP

IS61SF6436-10TQ

TQFP

IS61SF6436-10PQ

PQFP

Industrial Range: 40°C to +85°C

Speed (ns)

Order Part Number

Package

IS61SF6436-10TQI

TQFP

IS61SF6436-10PQI

PQFP

ISSI

Integrated Silicon Solution, Inc.

2231 Lawson Lane

Santa Clara, CA 95054

Tel: 1-800-379-4774

Fax: (408) 588-0806

E-mail: sales@issi.com

www.issi.com

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