ISSI

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. C
02/03/06

Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.

IS61WV12816BLL
IS64WV12816BLL

FEATURES

· High-speed access time:

12 ns: 3.3V + 10%

15 ns: 2.5V-3.6V

· Operating Current: 25mA (typ.)

· Stand by Current: 400µA(typ.)

· TTL and CMOS compatible interface levels

· Fully static operation: no clock or refresh

required

· Three state outputs

· Data control for upper and lower bytes

· Industrial and Automotive temperatures avail-

able

· Lead-free available

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION

The

ISSI

IS61WV12816BLL and IS64WV12816BLL are

high-speed, 2,097,152-bit static RAM organized as 131,072
words by 16 bits. They are fabricated using

ISSI

's high-

performance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields
access times as fast as 12 ns with low power consumption.

When

CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be
reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,

CE and OE. The active LOW

Write Enable (

WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (

UB) and Lower

Byte (

LB) access.

The IS61WV12816BLL and IS64WV12816BLL are packaged
in the JEDEC standard 44-pin TSOP (Type II) and 48-pin
mini BGA (6mm x 8mm).

FUNCTIONAL BLOCK DIAGRAM

FEBRUARY 2006

A0-A16

128Kx16

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

GND

VDD

I/O

DATA

CIRCUIT

I/O0-I/O7

Lower Byte

I/O8-I/O15

Upper Byte

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. C

02/03/06

ISSI

IS61WV12816BLL
IS64WV12816BLL

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22

44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23

A4
A3
A2
A1
A0

I/O0
I/O1
I/O2
I/O3

GND

I/O4
I/O5
I/O6
I/O7

A16
A15
A14
A13
A12

A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
V

I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC

44-Pin TSOP (Type II) (T)

PIN DESCRIPTIONS

A0-A16

Address Inputs

I/O0-I/O15

Data Inputs/Outputs

Chip Enable Input

Output Enable Input

Write Enable Input

Lower-byte Control (I/O0-I/O7)

Upper-byte Control (I/O8-I/O15)

No Connection

Power

GND

Ground

TRUTH TABLE

I/O PIN

Mode

I/O0-I/O7

I/O8-I/O15

Current

Not Selected

High-Z

, I

Output Disabled

High-Z

Read

OUT

High-Z

OUT

Write

High-Z

PIN CONFIGURATION

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. C
02/03/06

ISSI

IS61WV12816BLL
IS64WV12816BLL

PIN DESCRIPTIONS

A0-A16

Address Inputs

I/O0-I/O15

Data Inputs/Outputs

Chip Enable Input

Output Enable Input

Write Enable Input

Lower-byte Control (I/O0-I/O7)

Upper-byte Control (I/O8-I/O15)

No Connection

Power

GND

Ground

48-Pin mini BGA (B)

PIN CONFIGURATION

1 2 3 4 5 6

I/O

GND

I/O

A16

I/O

GND

I/O

A14

A15

I/O

A12

A13

I/O

A10

A11

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. C

02/03/06

ISSI

IS61WV12816BLL
IS64WV12816BLL

OPERATING RANGE (V

)

Range

Ambient Temperature

(15 n

)

(12 n

)

Industrial

40°C to +85°C

2.5V-3.6V

3.3V + 10%

Automotive

40°C to +125°C

2.5V-3.6V

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol

Parameter

Value

Unit

Power Supply Voltage Relative to GND

0.5 to 4.0V

TERM

Terminal Voltage with Respect to GND

0.5 to V

+ 0.5

STG

Storage Temperature

65 to + 150

°C

Power Dissipation

1.0

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.

DC ELECTRICAL CHARACTERISTICS

(Over Operating Range)

= 2.5V-3.6V

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

Output HIGH Voltage

= Min., I

= 1.0 mA

1.8

Output LOW Voltage

= Min., I

= 1.0 mA

0.4

Input HIGH Voltage

2.0

+ 0.3

Input LOW Voltage

(1)

0.3

0.4

Input Leakage

GND

µA

Output Leakage

GND

OUT

, Outputs Disabled

µA

Note:

(min.) = 0.3V DC; V

(min.) = 2.0V AC (pulse width - 2.0 ns). Not 100% tested.

(max.) = V

+ 0.3V DC; V

(max.) = V

+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.

DC ELECTRICAL CHARACTERISTICS

(Over Operating Range)

= 3.3V + 10%

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

Output HIGH Voltage

= Min., I

= 4.0 mA

2.4

Output LOW Voltage

= Min., I

= 8.0 mA

0.4

Input HIGH Voltage

+ 0.3

Input LOW Voltage

(1)

0.3

0.8

Input Leakage

GND

µA

Output Leakage

GND

OUT

, Outputs Disabled

µA

Note:

(min.) = 0.3V DC; V

(min.) = 2.0V AC (pulse width - 2.0 ns). Not 100% tested.

(max.) = V

+ 0.3V DC; V

(max.) = V

+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. C
02/03/06

ISSI

IS61WV12816BLL
IS64WV12816BLL

POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

-12ns

-15 ns

Symbol

Parameter

Test Conditions

Min.

Max.

Min.

Max.

Unit

Operating

= Max.,

CE = V

Com.

Supply Current

OUT

= 0 mA, f = Max.

Ind.

Auto

typ.

(2)

TTL Standby

= Max.,

Com.

Current

= V

or V

Ind.

(TTL Inputs)

, f = max

Auto

CMOS Standby

= Max.,

Com.

750

Current

0.2V,

Ind.

900

(CMOS Inputs)

0.2V, or

Auto

0.2V, f = 0

typ.

(2)

400

Note:

1. At f = f

MAX

, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at V

=3.3V, T

=25

C. Not 100% tested.

CAPACITANCE

(1)

Symbol

Parameter

Conditions

Max.

Unit

Input Capacitance

= 0V

OUT

Input/Output Capacitance

OUT

= 0V

Note:

1. Tested initially and after any design or process changes that may affect these parameters.

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. C

02/03/06

ISSI

IS61WV12816BLL
IS64WV12816BLL

AC TEST LOADS

Figure 1.

319

5 pF

Including

jig and

scope

353

OUTPUT

3.3V

Figure 2.

READ CYCLE SWITCHING CHARACTERISTICS

(1)

(Over Operating Range)

-12 ns

-15 ns

Symbol

Parameter

Min.

Max.

Min.

Max.

Unit

Read Cycle Time

Address Access Time

OHA

Output Hold Time

ACE

CE Access Time

DOE

OE Access Time

HZOE

(2)

OE to High-Z Output

LZOE

(2)

OE to Low-Z Output

HZCE

(2)

CE to High-Z Output

LZCE

(2)

CE to Low-Z Output

LB, UB Access Time

HZB

(2)

LB, UB to High-Z Output

LZB

(2)

LB, UB to Low-Z Output

Notes:

1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to

3.0V and output loading specified in Figure 1.

2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

= 50

1.5V

OUTPUT

30 pF
Including
jig and
scope

AC TEST CONDITIONS

Parameter

Unit

(2.5V-3.6V)

(3.3V + 10%)

Input Pulse Level

0.4V to V

-0.3V

0.4V to V

-0.3V

Input Rise and Fall Times

1.5ns

Input and Output Timing

/2 + 0.05

and Reference Level (V

Ref

)

Output Load

See Figures 1 and 2

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. C
02/03/06

ISSI

IS61WV12816BLL
IS64WV12816BLL

DATA VALID

READ1.eps

PREVIOUS DATA VALID

OHA

OUT

ADDRESS

OHA

DOE

LZOE

ACE

LZCE

HZOE

HIGH-Z

DATA VALID

UB_CEDR2.eps

HZB

ADDRESS

LB, UB

OUT

HZCE

LZB

READ CYCLE NO. 2

(1,3)

AC WAVEFORMS

READ CYCLE NO. 1

(1,2)

(Address Controlled) (

CE = OE = V

UB or LB = V

)

Notes:

WE is HIGH for a Read Cycle.

2. The device is continuously selected.

OE, CE, UB, or LB = V

3. Address is valid prior to or coincident with

CE LOW transition.

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. C

02/03/06

ISSI

IS61WV12816BLL
IS64WV12816BLL

WRITE CYCLE SWITCHING CHARACTERISTICS

(1,3)

(Over Operating Range)

-12 ns

-15 ns

Symbol

Parameter

Min.

Max.

Min.

Max.

Unit

Write Cycle Time

SCE

CE to Write End

Address Setup Time

to Write End

Address Hold from Write End

Address Setup Time

PBW

LB, UB Valid to End of Write

PWE

WE Pulse Width (OE = HIGH)

PWE

WE Pulse Width (OE = LOW)

Data Setup to Write End

Data Hold from Write End

HZWE

(3)

WE LOW to High-Z Output

LZWE

(3)

WE HIGH to Low-Z Output

Notes:

1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to

3.0V and output loading specified in Figure 1.

2. The internal write time is defined by the overlap of

CE LOW and UB or LB, and WE LOW. All signals must be in valid states

to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced
to the rising or falling edge of the signal that terminates the write.

3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. C

02/03/06

ISSI

IS61WV12816BLL
IS64WV12816BLL

WRITE CYCLE NO. 2

(1)

(

WE Controlled, OE = HIGH during Write Cycle)

WRITE CYCLE NO. 3

(

WE Controlled: OE is LOW During Write Cycle)

DATA UNDEFINED

LOW

VALID ADDRESS

PWE1

HIGH-Z

PBW

HZWE

ADDRESS

UB, LB

OUT

DATA

VALID

LZWE

UB_CEWR2.eps

DATA UNDEFINED

VALID ADDRESS

LOW

PWE2

HIGH-Z

PBW

HZWE

ADDRESS

UB, LB

OUT

DATA

VALID

LZWE

UB_CEWR3.eps

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. C
02/03/06

ISSI

IS61WV12816BLL
IS64WV12816BLL

DATA UNDEFINED

ADDRESS 1

ADDRESS 2

HIGH-Z

PBW

WORD 1

LOW

WORD 2

UB_CEWR4.eps

HZWE

ADDRESS

UB, LB

OUT

DATA

VALID

LZWE

PBW

DATA

VALID

WRITE CYCLE NO. 4

(

LB, UB Controlled, Back-to-Back Write)

(1,3)

Notes:

1. The internal Write time is defined by the overlap of

CE = LOW, UB and/or LB = LOW, and WE = LOW. All signals must be

in valid states to initiate a Write, but any can be deasserted to terminate the Write. The t

, t

, and t

timing is

referenced to the rising or falling edge of the signal that terminates the Write.

2. Tested with OE HIGH for a minimum of 4 ns before

WE = LOW to place the I/O in a HIGH-Z state.

3. WE may be held LOW across many address cycles and the

LB, UB pins can be used to control the Write function.

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. C

02/03/06

ISSI

IS61WV12816BLL
IS64WV12816BLL

DATA RETENTION WAVEFORM

(

CE Controlled)

DATA RETENTION SWITCHING CHARACTERISTICS

Symbol

Parameter

Test Condition

Options

Min.

Typ.

(1)

Max.

Unit

for Data Retention

See Data Retention Waveform

1.8

3.6

Data Retention Current

= 2.0V,

0.2V

Ind.

0.4

0.9

Auto

0.4

SDR

Data Retention Setup Time

See Data Retention Waveform

RDR

Recovery Time

See Data Retention Waveform

Note 1:

Typical values are measured at V

= 3.3V, T

= 25

C. Not 100% tested.

CE V

- 0.2V

SDR

RDR

GND

Data Retention Mode

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. C
02/03/06

ISSI

IS61WV12816BLL
IS64WV12816BLL

ORDERING INFORMATION:

Industrial Range: 40°C to +85°C

Speed (ns)

Order Part No.

Package

12 (15

)

IS61WV12816BLL-12BI

mini BGA (6mm x 8mm)

IS61WV12816BLL-12BLI

mini BGA (6mm x 8mm), Lead-free

IS61WV12816BLL-12TI

Plastic TSOP (Type II)

IS61WV12816BLL-12TLI

Plastic TSOP (Type II), Lead-free

Note:

1. Speed = 12ns for V

= 3.3V + 10%. Speed = 15ns for V

= 2.5V-3.6V

Automotive Range: 40°C to +125°C

Speed (ns)

Order Part No.

Package

IS64WV12816BLL-15BA3

mini BGA (6mm x 8mm)

IS64WV12816BLL-15TA3

Plastic TSOP (Type II)

IS64WV12816BLL-15TLA3

Plastic TSOP (Type II), Lead-free

PACKAGING INFORMATION

ISSI

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. D
01/15/03

Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Mini Ball Grid Array
Package Code: B (48-pin)

Notes:
1. Controlling dimensions are in millimeters.

mBGA - 6mm x 8mm

MILLIMETERS

INCHES

Sym.

Min. Typ. Max.

N0.
Leads

1.20

0.047

0.24

0.30

0.009

0.012

0.60

0.024

7.90

8.10

0.311

0.319

5.25 BSC

0.207 BSC

5.90

6.10

0.232

0.240

3.75 BSC

0.148 BSC

0.75 BSC

0.030 BSC

0.30

0.35

0.40

0.012 0.014 0.016

mBGA - 8mm x 10mm

MILLIMETER

INCHES

Sym.

Min. Typ. Max.

N0.
Leads

1.20

0.047

0.24

0.30

0.009

0.012

0.60

0.024

9.90

10.10

0.390

0.398

5.25 BSC

0.207 BSC

7.90

8.10

0.311

0.319

3.75 BSC

0.148 BSC

0.75 BSC

0.030 BSC

0.30

0.35

0.40

0.012 0.014 0.016

SEATING PLANE

b (48x)

Top View

Bottom View

6 5 4 3 2 1

1 2 3 4 5 6

PACKAGING INFORMATION

ISSI

Integrated Silicon Solution, Inc. -- www.issi.com --

1-800-379-4774

Rev. F
06/18/03

Plastic TSOP
Package Code: T (Type II)

SEATING PLANE

N/2

N/2+1

Notes:
1. Controlling dimension: millimieters,

unless otherwise specified.

2. BSC = Basic lead spacing

between centers.

3. Dimensions D and E1 do not

include mold flash protrusions and
should be measured from the
bottom of the package.

4. Formed leads shall be planar with

respect to one another within
0.004 inches at the seating plane.

Plastic TSOP (T - Type II)

Millimeters

Inches

Millimeters

Inches

Millimeters

Inches

Symbol Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Ref. Std.

No. Leads (N)

1.20

0.047

1.20

0.047

1.20

0.047

0.05

0.15

0.002 0.006

0.05

0.15

0.002 0.006

0.05

0.15

0.002 0.006

0.30

0.52

0.012 0.020

0.30

0.45

0.012 0.018

0.30

0.45

0.012 0.018

0.12

0.21

0.005 0.008

0.12

0.21

0.005 0.008

0.12

0.21

0.005 0.008

20.82 21.08

0.820 0.830

18.31 18.52

0.721 0.729

20.82 21.08

0.820 0.830

10.03 10.29

0.391 0.400

10.03 10.29

0.395 0.405

10.03 10.29

0.395 0.405

11.56 11.96

0.451 0.466

11.56 11.96

0.455 0.471

11.56 11.96

0.455 0.471

1.27 BSC

0.050 BSC

0.80 BSC

0.032 BSC

0.80 BSC

0.031 BSC

0.40

0.60

0.016 0.024

0.41

0.60

0.016 0.024

0.40

0.60

0.016 0.024

ZD 0.95 REF 0.037 REF 0.81 REF 0.032 REF 0.88 REF 0.035 REF

0°

5°

0°

5°

0°

5°

0°

5°

0°

5°

0°

5°

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