Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
1
Rev. B
06/03/05
IS62WV6416ALL
IS62WV6416BLL
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
64K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
High-speed access time: 45ns, 55ns
CMOS low power operation:
30 mW (typical) operating
15 W (typical) CMOS standby
TTL compatible interface levels
Single power supply
1.7V--2.2V V
DD
(62WV6416ALL)
2.5V--3.6V V
DD
(62WV6416BLL)
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
2CS Option Available
Lead-free available
DESCRIPTION
The
ISSI
IS62WV6416ALL/ IS62WV6416BLL are high-
speed, 1M bit static RAMs organized as 64K words by 16
bits. It is fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected) or when
CS1
is LOW, CS2 is HIGH and both
LB
and
UB
are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(
WE
) controls both writing and reading of the memory. A
data byte allows Upper Byte (
UB
) and Lower Byte (
LB
)
access.
The IS62WV6416ALL and IS62WV6416BLL are packaged
in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and
44-Pin TSOP (TYPE II).
FUNCTIONAL BLOCK DIAGRAM
JUNE 2005
A0-A15
CS1
OE
WE
64K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB
CS2
2
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. B
06/03/05
IS62WV6416ALL, IS62WV6416BLL
ISSI
PIN CONFIGURATIONS
48-Pin mini BGA (6mm x 8mm)
(Package Code B)
PIN DESCRIPTIONS
A0-A15
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
CS1
, CS2
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
LB
Lower-byte Control (I/O0-I/O7)
UB
Upper-byte Control (I/O8-I/O15)
NC
No Connection
V
DD
Power
GND
Ground
48-Pin mini BGA (6mm x 8mm)
2 CS Option (Package Code B2)
44-Pin mini TSOP (Type II)
(Package Code T)
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB
OE
A0
A1
A2
CS2
I/O
8
UB
A3
A4
CS1
I/O
0
I/O
9
I/O
10
A5
A6
I/O
1
I/O
2
GND
I/O
11
NC
A7
I/O
3
V
DD
V
DD
I/O
12
NC
NC
I/O
4
GND
I/O
14
I/O
13
A14
A15
I/O
5
I/O
6
I/O
15
NC
A12
A13
WE
I/O
7
NC
A8
A9
A10
A11
NC
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB
OE
A0
A1
A2
NC
I/O
8
UB
A3
A4
CSI
I/O
0
I/O
9
I/O
10
A5
A6
I/O
1
I/O
2
GND
I/O
11
NC
A7
I/O
3
V
DD
V
DD
I/O
12
NC
NC
I/O
4
GND
I/O
14
I/O
13
A14
A15
I/O
5
I/O
6
I/O
15
NC
A12
A13
WE
I/O
7
NC
A8
A9
A10
A11
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A4
A3
A2
A1
A0
CS1
I/O0
I/O1
I/O2
I/O3
V
DD
GND
I/O4
I/O5
I/O6
I/O7
WE
A15
A14
A13
A12
NC
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
V
DD
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
3
Rev. B
06/03/05
IS62WV6416ALL, IS62WV6416BLL
ISSI
TRUTH TABLE
I/O PIN
Mode
WE
WE
WE
WE
WE
CS1
CS1
CS1
CS1
CS1
CS2
OE
OE
OE
OE
OE
LB
LB
LB
LB
LB
UB
UB
UB
UB
UB
I/O0-I/O7
I/O8-I/O15
V
DD
Current
Not Selected
X
H
X
X
X
X
High-Z
High-Z
I
SB
1
, I
SB
2
X
X
L
X
X
X
High-Z
High-Z
I
SB
1
, I
SB
2
X
X
X
X
H
H
High-Z
High-Z
I
SB
1
, I
SB
2
Output Disabled
H
L
H
H
L
X
High-Z
High-Z
I
CC
H
L
H
H
X
L
High-Z
High-Z
I
CC
Read
H
L
H
L
L
H
D
OUT
High-Z
I
CC
H
L
H
L
H
L
High-Z
D
OUT
H
L
H
L
L
L
D
OUT
D
OUT
Write
L
L
H
X
L
H
D
IN
High-Z
I
CC
L
L
H
X
H
L
High-Z
D
IN
L
L
H
X
L
L
D
IN
D
IN
OPERATING RANGE (V
DD
)
Range
Ambient Temperature
IS62WV6416ALL
IS62WV6416BLL
Commercial
0C to +70C
1.7V - 2.2V
2.5V - 3.6V
Industrial
40C to +85C
1.7V - 2.2V
2.5V - 3.6V
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
0.2 to V
DD
+0.3
V
V
DD
V
DD
Related to GND
0.2 to +3.8
V
T
STG
Storage Temperature
65 to +150
C
P
T
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
4
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. B
06/03/05
IS62WV6416ALL, IS62WV6416BLL
ISSI
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
8
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
10
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
V
DD
Min.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= -0.1 mA
1.7-2.2V
1.4
--
V
I
OH
= -1 mA
2.5-3.6V
2.2
--
V
V
OL
Output LOW Voltage
I
OL
= 0.1 mA
1.7-2.2V
--
0.2
V
I
OL
= 2.1 mA
2.5-3.6V
--
0.4
V
V
IH
Input HIGH Voltage
1.7-2.2V
1.4
V
DD
+ 0.2
V
2.5-3.6V
2.2
V
DD
+ 0.3
V
V
IL
(1)
Input LOW Voltage
1.7-2.2V
0.2
0.4
V
2.5-3.6V
0.2
0.6
V
I
LI
Input Leakage
GND
V
IN
V
DD
1
1
A
I
LO
Output Leakage
GND
V
OUT
V
DD
, Outputs Disabled
1
1
A
Notes:
1. V
IL
(min.) = 1.0V for pulse width less than 10 ns.
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