2002 IXYS All rights reserved
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IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
Advanced Technical Information
I
FAV
= 130 A
V
RRM
= 600 V
t
rr
= 35 ns
DSEP 130-06A
V
RSM
V
RRM
Type
V
V
600
600
DSEP130-06A
225
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see IXYS Databook 2001
A = Anode, C = Cathode, TAB = Cathode
TO-247 AD
C
A
C (TAB)
C
A
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol
Conditions
Maximum Ratings
I
FRMS
70
A
I
FAVM
T
C
= 70C; rectangular, d = 0.5
130
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
1000
A
E
AS
T
VJ
= 25C; non-repetitive
0.4
mJ
I
AS
= 1.8 A; L = 180 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
0.2
A
T
VJ
-55...+175
C
T
VJM
175
C
T
stg
-55...+150
C
P
tot
T
C
= 25C
375
W
M
d
mounting torque
0.8...1.2
Nm
Weight
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25C
V
R
= V
RRM
1000
A
T
VJ
= 150C V
R
= V
RRM
4
mA
V
F
I
F
= 130 A;
T
VJ
= 150C
1.63
V
T
VJ
= 25C
2.26
V
R
thJC
0.4
K/W
R
thCH
0.25
K/W
t
rr
I
F
= 1 A; -di/dt = 400 A/s;
35
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
V
R
= 100 V; I
F
= 200 A; -di
F
/dt = 100 A/s
8
10.2
A
T
VJ
= 100C
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
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