2002 IXYS All rights reserved
1 - 3
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see pages D4 - 85-86
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300
s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
C
A
A = Anode, C = Cathode, TAB = Cathode
C
A
TO-220 AC
C (TAB)
C (TAB)
A
A
TO-263
DSEP 29-06A DSEP 29-06AS
DSEP 29-06B
I
FAV
= 30 A
V
RRM
= 600 V
t
rr
= 30/35 ns
V
RSM
V
RRM
Type
V
V
600
600
DSEP 29-06A
600
600
DSEP 29-06AS
600
600
DSEP 29-06B
Symbol
Conditions
Maximum Ratings
I
FRMS
35
A
I
FAVM
rect., d = 0.5; T
C
(Version A, AS)
= 135C
30
A
T
C
(Version B)
= 125C
30
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine;
(Version A, AS)
250
A
(Version B)
200
A
E
AS
T
VJ
= 25C; non-repetitive
0.2
mJ
I
AS
= 1.3 A; L = 180 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
0.1
A
T
VJ
-55...+175
C
T
VJM
175
C
T
stg
-55...+150
C
P
tot
T
C
= 25C
165
W
M
d
mounting torque
(Version A, B)
0.4...0.6
Nm
Weight
typical
2
g
Symbol
Conditions
Characteristic max. Values
Version A
Version B
I
R
T
VJ
= 25C; V
R
= V
RRM
250
250
A
T
VJ
= 150C; V
R
= V
RRM
1
2
mA
V
F
I
F
= 30 A;
T
VJ
= 150C
1.26
1.58
V
T
VJ
= 25C
1.61
2.52
V
R
thJC
0.9
0.9
K/W
R
thCH
typ.
0.5
0.5
K/W
t
rr
typ.
I
F
= 1 A; -di/dt = 200 A/s;
35
30
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
typ.
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/s
6
4
A
T
VJ
= 100C
202
2002 IXYS All rights reserved
2 - 3
D4
DSEP 29-06A
DSEP 29-06AS
200
600
1000
0
400
800
70
80
90
100
110
120
130
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
5
10
15
20
0.0
0.3
0.6
0.9
1.2
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
10
20
30
40
50
100
1000
0
500
1000
1500
2000
2500
3000
0.0
0.5
1.0
1.5
2.0
0
10
20
30
40
50
60
70
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
nC
A/
s
A/
s
t
rr
ns
t
fr
Z
thJC
A/
s
s
DSEP 29-06A
I
F
= 60A
I
F
= 30A
I
F
= 15A
T
VJ
= 100C
V
R
= 300V
T
VJ
= 100C
I
F
= 30A
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
T
VJ
= 100C
V
R
= 300V
T
VJ
= 100C
V
R
= 300V
I
F
= 60A
I
F
= 30A
I
F
= 15A
Q
r
I
RM
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
I
F
= 60A
I
F
= 30A
I
F
= 15A
t
fr
V
FR
Fig. 7 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.502
0.0052
2
0.193
0.0003
3
0.205
0.0162
T
VJ
=25C
T
VJ
=100C
T
VJ
=150C
NOTE: Fig. 2 to Fig. 6 shows typical values
2002 IXYS All rights reserved
3 - 3
DSEP 29-06B
200
600
1000
0
400
800
60
70
80
90
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
5
10
15
20
0.00
0.25
0.50
0.75
1.00
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
5
10
15
20
25
30
100
1000
0
200
400
600
800
1000
0
1
2
3
0
10
20
30
40
50
60
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
nC
A/
s
A/
s
t
rr
ns
t
fr
Z
thJC
A/
s
s
DSEP 29-06
I
F
= 60A
I
F
= 30A
I
F
= 15A
T
VJ
= 100C
V
R
= 300V
T
VJ
= 100C
I
F
= 30A
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
T
VJ
= 100C
V
R
= 300V
T
VJ
= 100C
V
R
= 300V
I
F
= 60A
I
F
= 30A
I
F
= 15A
Q
r
I
RM
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
I
F
= 60A
I
F
= 30A
I
F
= 15A
t
fr
V
FR
Fig. 7 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.502
0.0052
2
0.193
0.0003
3
0.205
0.0162
906
T
VJ
=25C
T
VJ
=100C
T
VJ
=150C
NOTE: Fig. 2 to Fig. 6 shows typical values
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