2003 IXYS All rights reserved
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IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
IXYS reserves the right to change limits, test conditions and dimensions.
I
FAV
= 60 A
V
RRM
= 1200 V
t
rr
= 40 ns
DSEP 60-12AR
V
RSM
V
RRM
Type
V
V
1200
1200
DSEP 60-1
2AR
341
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see Outlines.pdf
Advanced Technical Information
A = Anode, C = Cathode
ISOPLUS 247
TM
C
A
TAB
C
A
Symbol
Conditions
Maximum Ratings
I
FRMS
70
A
I
FAVM
T
C
= 90C; rectangular, d = 0.5
60
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
500
A
E
AS
T
VJ
= 25C; non-repetitive
23
mJ
I
AS
= 14.5 A; L = 180 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
1.5
A
T
VJ
-55...+175
C
T
VJM
175
C
T
stg
-55...+150
C
P
tot
T
C
= 25C
190
W
M
f
mounting force
20...120
N
Weight
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
V
R
= V
RRM
; T
VJ
= 25C
650 A
V
R
= V
RRM
; T
VJ
= 150C
2.5
mA
V
F
I
F
= 60 A;
T
VJ
= 150C
1.74
V
T
VJ
= 25C
2.66
V
R
thJC
0.8
K/W
R
thCH
0.25
K/W
t
rr
I
F
= 1 A; -di/dt = 300 A/s;
40
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
V
R
= 100 V; I
F
= 130 A;
7
14.3
A
-di
F
/dt = 100 A/s; T
VJ
= 100C
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300
s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
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