2004 IXYS All rights reserved
1 - 2
DSEP 6-06AS
432
IXYS reserves the right to change limits, test conditions and dimensions.
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Applications
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
Dimensions see pages D4 - 85-86
I
FAVM
= 6 A
V
RRM
= 600 V
t
rr
= 20 ns
TO-252AA (DPAK)
Anode
Anode
Cathode (Flange)
V
RSM
V
RRM
Type
Marking
V
V
on product
600
600
DSEP 6-06AS
6P060AS
C
A
Symbol
Conditions
Maximum Ratings
I
FRMS
T
VJ
= T
VJM
26
A
I
FAVM
T
C
= 152C; rectangular, d = 0.5
6
A
I
FRM
t
P
< 10 s; rep. rating, pulse width limited by T
VJM
12
A
I
FSM
T
VJ
= 45C; t = 10 ms
(50 Hz), sine
40
A
E
AS
T
VJ
= 25C; non-repetitive
0.1
mJ
I
AS
= 0.8 A; L = 180 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
0.1
A
T
VJ
-40...+175
C
T
VJM
175
C
T
stg
-40...+150
C
P
tot
T
C
= 25C
55
W
Weight
typ.
0.3
g
I
FAVM
rating includes reverse blocking losses
at T
VJM
, V
R
= 0.6 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25C
V
R
= V
RRM
50
A
T
VJ
= 150C V
R
= V
RRM
0.2
mA
V
F
I
F
= 6 A;
T
VJ
= 150C
1.33
V
T
VJ
= 25C
2.02
V
R
thJC
2.8
K/W
t
rr
I
F
= 1 A; -di/dt = 200 A/s; V
R
= 30 V; T
VJ
= 25C
20
tbd
ns
I
RM
V
R
= 100 V; I
F
= 10 A; -di
F
/dt = 100 A/s
3.5
4.4
A
T
VJ
= 100C
2004 IXYS All rights reserved
2 - 2
DSEP 6-06AS
432
IXYS reserves the right to change limits, test conditions and dimensions.
NOTE: Fig. 2 to Fig. 6 shows typical values
200
600
1000
0
400
800
60
70
80
90
100
110
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
0
40
80
120
160
0.0
0.4
0.8
1.2
1.6
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
5
10
15
20
0.0
0.3
0.6
0.9
1.2
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
10
20
30
100
1000
0
200
400
600
800
1000
0.0
0.5
1.0
1.5
2.0
0
2
4
6
8
10
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
nC
A/
s
A/
s
t
rr
ns
t
fr
A/
s
s
DSEP 6-06AS
Z
thJC
T
VJ
=150C
T
VJ
=100C
T
VJ
= 25C
I
F
= 12A
I
F
= 6A
I
F
= 3A
T
VJ
= 100C
V
R
= 300V
T
VJ
= 100C
V
R
= 300V
T
VJ
= 100C
V
R
= 300V
T
VJ
= 100C
I
F
= 6A
V
FR
t
fr
I
RM
Q
r
I
F
= 12A
I
F
= 6A
I
F
= 3A
I
F
= 12A
I
F
= 6A
I
F
= 3A
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal resistance junction to case
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