2000 IXYS All rights reserved
1 - 2
DSS 17-06CR
I
FAV
= 17 A
V
RRM
= 600 V
t
rr
= 45 ns
V
RSM
V
RRM
Type
V
V
600
600
DSS 17-06CR
048
Symbol
Conditions
Maximum Ratings
I
FRMS
50
A
I
FAVM
T
C
= 95C; rectangular, d = 0.5
17
A
I
FRM
t
P
< 10 s; rep. rating, pulse width limited by T
VJM
tbd
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
200
A
E
AS
T
VJ
= 25C; non-repetitive
tbd
mJ
I
AS
= 2 A; L = 180 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
tbd
A
T
VJ
-55...+175
C
T
VJM
175
C
T
stg
-55...+150
C
P
tot
T
C
= 25C
105
W
V
ISOL
50/60 Hz RMS; I
ISOL
1 mA
2500
V~
F
C
mounting force with clip
20...120
N
Weight
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
x
T
VJ
= 25C
V
R
= V
RRM
0.5
mA
T
VJ
= 125C V
R
= V
RRM
5
mA
V
F
y
I
F
= 15 A;
T
VJ
= 125C
2.71
V
T
VJ
= 25C
3.32
V
R
thJC
1.4
K/W
R
thCH
0.25
K/W
t
rr
I
F
= 10 A; -di/dt = 100 A/s;
45
ns
V
R
= 100 V; T
VJ
= 25C
I
RM
V
R
= 100 V; I
F
= 10 A; -di
F
/dt = 100 A/s
4.0
A
T
VJ
= 25C
HiPerDyn
TM
Schottky Diode
(Electrically Isolated Back Surface)
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300 s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
Features
q
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
q
Low cathode to tab capacitance (<25pF)
q
International standard package
q
Planar passivated chips
q
Very short recovery time
q
Extremely low switching losses
q
Low I
RM
-values
q
Soft recovery behaviour
q
Epoxy meets UL 94V-0
q
Isolated and UL registered E153432
Applications
q
Antiparallel diode for high frequency
switching devices
q
Antisaturation diode
q
Snubber diode
q
Free wheeling diode in converters
and motor control circuits
q
Rectifiers in switch mode power
supplies (SMPS)
q
Inductive heating
q
Uninterruptible power supplies (UPS)
q
Ultrasonic cleaners and welders
Advantages
q
Avalanche voltage rated for reliable
operation
q
Soft reverse recovery for low EMI/RFI
q
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
A = Anode, C = Cathode
* Patent pending
ISOPLUS 247
TM
A
C
Isolated back surface *
C
A
Preliminary Data
2000 IXYS All rights reserved
2 - 2
0
1
2
3
4
5
1
10
100
0
200
400
600
0.0001
0.001
0.01
0.1
1
10
5
15
25
0
10
20
0
10
20
30
40
50
60
70
0.0001
0.001
0.01
0.1
1
10
0.01
0.1
1
0
40
80
120
160
0
5
10
15
20
25
30
I
F(AV)
T
C
C
I
F(AV)
t
s
K/W
I
FSM
t
P
A
0
200
400
600
10
100
1000
C
T
I
R
I
F
A
V
F
V
R
V
R
V
pF
V
mA
A
P
(AV)
W
Z
thJC
V
Single Pulse
DSS17-06CR
A
s
T
VJ
=175C
150C
125C
100C
25C
T
VJ
=
175C
125C
25C
T
VJ
= 25C
d=0.5
d =
DC
0.5
0.33
0.25
0.17
0.08
50C
DC
0.08
D=0.5
0.33
0.25
0.17
75C
150C
2
DSS 17-06CR
Fig. 3 Typ. junction capacitance C
T
versus reverse voltage V
R
Fig. 2 Typ. value of reverse current I
R
versus reverse voltage V
R
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 4 Average forward current I
F(AV)
versus case temperature T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
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