2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 175
C
100
V
V
DGR
T
J
= 25
C to 175
C; R
GS
= 1 M
100
V
V
GSS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
66
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
250
A
I
AR
T
C
= 25
C
60
A
E
AR
T
C
= 25
C
40
mJ
E
AS
T
C
= 25
C
1.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
10
V/ns
T
J
150
C, R
G
= 4
P
D
T
C
= 25
C
158
W
T
J
-55 ... +175
C
T
JM
175
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
Plastic body for 10 s
250
C
F
C
Mounting Force
(PLUS220)
11..65 / 2.5..15
N/lb
Weight
ISOPLUS220
2
g
DS99212(01/05)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
100
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.5
5.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 150
C
250
A
R
DS(on)
V
GS
= 10 V, I
D
= 55 A
17 m
Pulse test, t
300
s, duty cycle d
2 %
PolarHT
TM
HiPerFET
Power MOSFET
V
DSS
= 100
V
I
D25
= 66
A
R
DS(on)
= 17 m
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Features
Fast intrinsic diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Advantages
Space savings
High power density
Preliminary Data Sheet
IXFC 110N10P
G = Gate
D = Drain
S = Source
ISOPLUS220
TM
(IXFC)
E153432
G
D
S
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFC 110N10P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
=55 A, pulse test
30
40
S
C
iss
3550
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1370
pF
C
rss
440
pF
t
d(on)
21
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A
25
ns
t
d(off)
R
G
= 4
(External)
65
ns
t
f
25
ns
Q
g(on)
110
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 55 A
25
nC
Q
gd
62
nC
R
thJC
0.75
0.95 K/W
R
thCK
0.21
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
66
A
I
SM
Repetitive
250
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
I
F
= 25 A
200 ns
-di/dt = 100 A/
s
Q
RM
V
R
= 50 V
0.6
C
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478 B2
ISOPLUS220 Outline
2005 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
C
0
20
40
60
80
100
120
140
160
180
200
220
0
1
2
3
4
5
6
7
8
9
10
V
D S
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 150
C
0
10
20
30
40
50
60
70
80
90
100
110
0
0.5
1
1.5
2
2.5
3
3.5
4
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 1. Output Characteristics
@ 25
C
0
10
20
30
40
50
60
70
80
90
100
110
0
0.2 0.4
0.6
0.8
1
1.2
1.4
1.6 1.8
2
V
D S
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 10V
9V
7V
5V
6V
8V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-50
-25
0
25
50
75
100
125
150
175
T
J
- Degrees Centigrade
R
D
S (
o n )
-
N
o
rm
a
l
i
z
e
d
I
D
= 110A
I
D
= 55A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
-50
-25
0
25
50
75
100
125
150
175
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
External Lead Current Limit
Fig. 5. R
DS(on)
Norm alized to 0.5 I
D25
Value vs. Drain Current
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0
25
50
75
100 125 150 175 200 225 250
I
D
- Amperes
R
D S
(
o
n
)
- N
o
rm
a
l
i
z
e
d
T
J
= 25
C
V
GS
= 10V
T
J
= 175
C
V
GS
= 15V
IXFC 110N10P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFC 110N10P
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
C
apac
i
t
anc
e -
pi
c
o
F
a
r
ads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 50V
I
D
= 55A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
25
50
75
100
125
150
175
200
225
250
4
5
6
7
8
9
10
11
V
G S
- Volts
I
D
- A
m
p
e
r
e
s
T
J
= -40
C
25
C
150
C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
0
50
100
150
200
250
300
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40
C
25
C
150
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
350
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 150
C
T
J
= 25
C
Fig. 12. Forw ard-Bias
Safe Operating Area
10
100
1000
1
10
100
1000
V
D S
- Volts
I
D
-
A
m
per
es
100s
1ms
DC
T
J
= 175
C
T
C
= 25
C
R
DS(on)
Limit
10ms
25s
2005 IXYS All rights reserved
IXFC 110N10P
Fig. 13. Maximum Transient Thermal Resistance
0.01
0.10
1.00
0.1
1
10
100
1000
Pulse Width - milliseconds
R
( t
h ) J C
-
C / W
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