2005 IXYS All rights reserved
DS99409(06/05)
PolarHV
TM
HiPerFET
Power MOSFET
IXFC 14N60P
V
DSS
= 600 V
I
D25
= 8 A
R
DS(on)
620 m
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
3.5
5.5
V
I
GSS
V
GS
=
30 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
5
A
V
GS
= 0 V
T
J
= 125
C
50
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
550
620 m
Pulse test, t
300
s, duty cycle d
2 %
G = Gate
D = Drain
S = Source
TAB = Drain
ADVANCE TECHNICAL INFORMATION
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
600
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
600
V
V
GS
Continuous
30
V
V
GSM
Tranisent
40
V
I
D25
T
C
= 25
C
8
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
42
A
I
AR
T
C
= 25
C
8
A
E
AR
T
C
= 25
C
23
mJ
E
AS
T
C
= 25
C
0.9
J
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
10
V/ns
T
J
150
C, R
G
= 4
P
D
T
C
= 25
C
100
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
Plastic body for 10 s
250
C
V
ISOL
50/60 Hz, RMS, t = 1, leads-to-tab
2500
V~
F
C
Mounting Force
11..65/2.5..15
N/lb
Weight
2
g
ISOPLUS220
TM
(IXFC)
E153432
G
D
S
Isolated Tab
Electrically Isolated Tab,
N-Channel Enhancement Mode,
Fast Intrinsic Diode
Avalanche Rated
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ. Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
7
13
S
C
iss
2300
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
215
pF
C
rss
13
pF
t
d(on)
23
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
27
ns
t
d(off)
R
G
= 10
(External)
70
ns
t
f
26
ns
Q
g(on)
38
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
14
nC
Q
gd
12
nC
R
thJC
1.25 K/W
R
thCK
(ISOPLUS220)
0.21 K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
8
A
I
SM
Repetitive
42
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
I
F
= 14 A, -di/dt = 100 A/
s
250
ns
I
RM
V
R
= 100 V
6
A
Q
RM
0.6
C
IXFC 14N60P
ISOPLUS220 Outline
2005 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
C
0
5
10
15
20
25
30
0
3
6
9
12
15
18
21
24
27
30
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
9V
7V
8V
Fig. 3. Output Characteristics
@ 125
C
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
16
18
20
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
6V
7V
Fig. 1. Output Characteristics
@ 25
C
0
2
4
6
8
10
12
14
0
1
2
3
4
5
6
7
8
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
9V
8V
7V
Fig. 4. R
DS(on
)
Normalized to 0.5 I
D25
Value vs. Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o
n
)
- N
o
rm
a
l
i
z
e
d
I
D
= 14A
I
D
= 7A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
2
4
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
Fig. 5. R
DS(on)
Normalized to
0.5 I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
0
5
10
15
20
25
30
I
D
- Amperes
R
D
S
(
o n )
- N
o
rm
a
l
i
z
e
d
T
J
= 125
C
T
J
= 25
C
V
GS
= 10V
IXFC 14N60P
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 11. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
apac
it
a
n
c
e
-
pic
o
F
a
r
a
d
s
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
35
40
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 300V
I
D
= 7A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
5
10
15
20
25
30
35
40
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
V
G S
- Volts
I
D
-
A
m
per
es
T
J
= 125
C
25
C
-40
C
Fig. 8. Transconductance
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
40
45
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40
C
25
C
125
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
5
10
15
20
25
30
35
40
45
50
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 125
C
T
J
= 25
C
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
10
100
1000
V
D S
- Volts
I
D
-
A
m
p
e
re
s
100s
1ms
DC
T
J
= 150C
T
C
= 25C
R
DS(on)
Limit
10ms
25s
IXFC 14N60P
2005 IXYS All rights reserved
Fig. 13. Maximum Transient Thermal Resistance
0.01
0.10
1.00
0.1
1
10
100
1000
Pulse Width - milliseconds
R
( t h
) J C
-
C / W
IXFC 14N60P
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