2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 175
C
500
V
V
DGR
T
J
= 25
C to 175
C; R
GS
= 1 M
500
V
V
GS
Continuous
30 V
V
GSM
Transient
40
V
I
D25
T
C
= 25
C
10
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
50
A
I
AR
T
C
= 25
C
10
A
E
AR
T
C
= 25
C
25
mJ
E
AS
T
C
= 25
C
750
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
10
V/ns
T
J
150
C, R
G
= 10
P
D
T
C
= 25
C
300
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
Plastic body for 10 s
250
C
V
ISOL
50/60 Hz, RMS, t = 1, leads-to-tab
2500
V~
F
C
Mounting Force
11..65/2.5..15
N/lb
Weight
2
g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99411(03/05)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
3.0
5.5
V
I
GSS
V
GS
=
30 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
5
A
V
GS
= 0 V
T
J
= 125
C
50
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
450 m
Pulse test, t
300
s, duty cycle d
2 %
PolarHV
TM
HiPerFET
Power MOSFET
Advance Technical Information
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
IXFC 16N50P
V
DSS
= 500 V
I
D25
= 10 A
R
DS(on)
= 450 m
t
rr
=
200
ns
ISOPLUS220
TM
(IXFC)
E153432
G
D
S
Isolated Tab
Electrically Isolated Tab,
N-Channel Enhancement Mode,
Fast Intrinsic Diode
Avalanche Rated
IXFC 16N50P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test 8 16
S
C
iss
2250
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
240
pF
C
rss
12
pF
t
d(on)
23
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
25
ns
t
d(off)
R
G
= 18
(External)
70
ns
t
f
22
ns
Q
g(on)
43
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
15
nC
Q
gd
12
nC
R
thJC
1.25 K/W
R
thCK
(ISOPLUS220)
0.21 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
16
A
I
SM
Repetitive
35
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
I
F
= 16 A, -di/dt = 100 A/
s
130
200
ns
I
RM
V
R
= 100 V
6 A
Q
RM
0.6
C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
ISOPLUS220 Outline
2005 IXYS All rights reserved
Fig. 1. Output Characteristics
@ 25
C
0
4
8
12
16
20
24
0
2
4
6
8
10
12
14
16
18
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
5V
7V
6V
Fig. 2. Output Characteristics
@ 125
C
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
18
20
V
D S
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 10V
8V
6V
5V
7V
Fig. 3. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o n )
- N
o
rm
a
l
i
z
e
d
I
D
= 16A
I
D
= 8A
V
GS
= 10V
Fig. 6. Input Adm ittance
0
2
4
6
8
10
12
14
16
18
4
4.5
5
5.5
6
6.5
7
V
G S
- Volts
I
D
-
A
m
per
es
T
J
= 125
C
25
C
-40
C
Fig. 5. Drain Current vs. Case
Tem perature
0
2
4
6
8
10
12
14
16
18
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
- A
m
p
e
re
s
Fig. 4. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0
4
8
12
16
20
24
I
D
- Amperes
R
D
S
(
o n )
- N
o
rm
a
l
i
z
e
d
T
J
= 125
C
T
J
= 25
C
V
GS
= 10V
IXFC 16N50P
IXFC 16N50P
Fig. 10. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
apac
i
t
anc
e
-
pic
o
F
a
r
a
ds
Ciss
Coss
Crss
f = 1MHz
Fig. 7. Transconductance
0
4
8
12
16
20
24
0
2
4
6
8
10
12
14
16
18
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40
C
25
C
125
C
Fig. 8. Source Current vs.
Source-To-Drain Voltage
0
5
10
15
20
25
30
35
40
45
50
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 125
C
T
J
= 25
C
Fig. 11. Forw ard-Bias
Safe Operating Area
1
10
100
10
100
1000
V
D S
- Volts
I
D
- A
m
p
e
re
s
100s
1ms
DC
T
J
= 150C
T
C
= 25C
R
DS(on)
Limit
10ms
25s
Fig. 12. Maxim um Transient Thermal
Resistance
0.01
0.10
1.00
0.1
1
10
100
1000
Pulse Width - milliseconds
R
(
t
h
) J
C
-
C /
W
Fig. 10. Gate Charge
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
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