2002 IXYS All rights reserved
Features
Conforms to SOT-227B outline
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Low cost
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA
600
V
V
GH(th)
V
DS
= V
GS
, I
D
= 8 mA
2.5
4.5
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
200
nA
I
DSS
V
DS
= V
DSS
T
J
= 25
C
100
A
V
GS
= 0 V
T
J
= 125
C
2
mA
R
DS(on)
V
GS
= 10 V, I
D
= I
T
Note1
130 m
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
600
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
600
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
41
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
176
A
I
AR
T
C
= 25
C
44
A
E
AR
T
C
= 25
C
60
mJ
E
AS
T
C
= 25
C
3
J
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
5
V/ns
T
J
150
C, R
G
= 2
P
D
T
C
= 25
C
500
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
J
1.6 mm (0.63 in) from case for 10 s
-
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque
1.5/13 Nm/lb.in.
Terminal connection torque
1.5/13 Nm/lb.in.
Weight
19
g
HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
98894 (1/02)
D
S
G
S
G = Gate
D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
IXFE 44N60
V
DSS
=
600 V
I
D25
=
41
A
R
DS(on)
= 130 m
t
rr
250 ns
Preliminary data sheet
ISOPLUS 227
TM
(IXFE)
S
G
S
D
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXFE 44N60
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
=
I
T
,
Note:1
30
45
S
C
iss
8900
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1000
pF
C
rss
330
pF
t
d(on)
42
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
=
I
T
55
ns
t
d(off)
R
G
= 1
(External),
110
ns
t
f
45
ns
Q
g(on)
330
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
=
I
T
60
nC
Q
gd
65
nC
R
thJC
0.25
K/W
R
thCK
0.07
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
44
A
I
SM
Repetitive;
176
A
pulse width limited by T
JM
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.3
V
Note:1
t
rr
I
F
= 50A, -di/dt = 100 A/
s, V
R
= 100 V
250
ns
Q
RM
1.4
C
I
RM
8
A
ISOPLUS-227 B
Please see IXFN44N60 data sheet
for characteristic curves.
Note: 1. Pulse test, t
300
s, duty cycle d
2 %
2. Test current
I
T
= 22A
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