2003 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
800
V
V
DGR
T
J
= 25
C to 150C; R
GS
= 1 M
800
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
17
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
68
A
I
AR
T
C
= 25
C
17
A
E
AR
T
C
= 25
C
30
mJ
E
AS
T
C
= 25
C
1.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
5
V/ns
T
J
150C, R
G
= 2
P
D
T
C
= 25
C
400
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-247
6
g
TO-268
4
g
TO-247 AD (IXFH)
G = Gate
D = Drain
S = Source
TAB = Drain
(TAB)
DS99058A(06/03)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA
800
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
4.5
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
T
J
= 25
C
25
A
V
GS
= 0 V
T
J
= 125
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
0.60
Pulse test, t
300 s, duty cycle d 2 %
IXFH 17N80Q
IXFT 17N80Q
V
DSS
= 800 V
I
D25
= 17 A
R
DS(on)
= 0.60
t
rr
250 ns
Preliminary Data Sheet
TO-268 (D3)
(IXFT) Case Style
(TAB)
G
S
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Features
IXYS advanced low Q
g
process
International standard packages
Low R
DS (on)
Unclamped Inductive Switching (UIS)
rated
Fast switching
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFH 17N80Q
IXFT 17N80Q
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
9
17
S
C
iss
3600
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
350
pF
C
rss
100
pF
t
d(on)
18
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
27
ns
t
d(off)
R
G
= 1.5
(External)
53
ns
t
f
16
ns
Q
g(on)
95
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
20
nC
Q
gd
40
nC
R
thJC
0.31
K/W
R
thCK
(TO-247)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
15
A
I
SM
Repetitive;
60
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
250
ns
Q
RM
I
F
= I
S
-di/dt = 100 A/
s, V
R
= 100 V
0.85
C
I
RM
8
A
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
TO-247 AD Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-268 Outline
Min Recommended Footprint
2003 IXYS All rights reserved
IXFH 17N80Q
IXFT 17N80Q
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
7V
5V
6V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
2
4
6
8
10
12
14
16
18
0
5
10
15
20
25
30
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
6V
5V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
2
4
6
8
10
12
14
16
18
0
2
4
6
8
10
12
V
D S
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 10V
5V
6V
Fig. 4. R
DS(on)
Norm alized to I
D25
Value vs.
Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D S
(o
n
)
-
N
o
rm
a
l
i
z
e
d
I
D
= 17A
I
D
= 8.5A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
2
4
6
8
10
12
14
16
18
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
Fig. 5. R
DS(on)
Norm alized to I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
0
5
10
15
20
25
30
35
I
D
- Amperes
R
D
S
(
on)
-
N
o
rm
a
l
i
z
e
d
T
J
= 125C
T
J
= 25C
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFH 17N80Q
IXFT 17N80Q
Fig. 11. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
C
apac
i
t
anc
e -
pF
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
2
4
6
8
10
0
20
40
60
80
100
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 400V
I
D
= 8.5A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
5
10
15
20
25
3
3.5
4
4.5
5
5.5
6
V
G S
- Volts
I
D
-
A
m
per
es
T
J
= 120C
25C
-40C
Fig. 12. Maxim um Transient Therm al
Resistance
0.01
0.1
1
1
10
100
1000
Pulse Width - milliseconds
R
(t
h
)
J
C
-
(
C
/
W
)
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35
40
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40C
25C
125C
Fig. 9. Source Current vs. Source-To-
Drain Voltage
0
10
20
30
40
50
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 125C
T
J
= 25C
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