2003 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
600
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
600
V
V
GS
Continuous
30
V
V
GSM
Transient
40
V
I
D25
T
C
= 25
C
20
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
80
A
I
AR
T
C
= 25
C
20
A
E
AR
T
C
= 25
C
30
mJ
E
AS
T
C
= 25
C
1.5
J
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
15
V/ns
T
J
150
C, R
G
= 2
P
D
T
C
= 25
C
300
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-247 AD
6
g
TO-268
4
g
TO-247 AD (IXFH)
G = Gate
D = Drain
S = Source
TAB = Drain
(TAB)
DS98549C(03/03)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
=
250
A
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
4.5
V
I
GSS
V
GS
=
30 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
T
J
= 25
C
25
A
V
GS
= 0 V
T
J
= 125
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
0.35
Pulse test, t
300
s, duty cycle d
2 %
TO-268
(IXFT)
Case Style
(TAB)
G
S
HiPerFET
TM
Power MOSFETs
Q-Class
Features
IXYS advanced low gate charge
process
International standard packages
Low gate charge and capacitance
- easier to drive
- faster switching
Low R
DS (on)
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
IXFH 20N60Q
V
DSS
=
600 V
IXFT 20N60Q
I
D25
=
20 A
R
DS(on)
=
0.35
t
rr
250ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt,
Low Gate Charge and Capacitances
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFH 20N60Q
IXFT 20N60Q
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
10
20
S
C
iss
3300
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
410
pF
C
rss
130
pF
t
d(on)
20
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
20
ns
t
d(off)
R
G
= 1.5
(External)
45
ns
t
f
20
ns
Q
g(on)
90
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
20
nC
Q
gd
45
nC
R
thJC
0.42
K/W
R
thCK
(TO-247)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
20
A
I
SM
Repetitive; pulse width limited by T
JM
80
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
250
ns
Q
RM
I
F
= I
S,
-di/dt = 100 A/
s, V
R
= 100 V
0.85
C
I
RM
8
A
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
TO-247 AD Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-268 Outline
Min Recommended Footprint
2003 IXYS All rights reserved
IXFH 20N60Q
IXFT 20N60Q
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
8
16
24
32
40
48
0
4
8
12
16
20
24
V
DS
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 1 0V
9V
8V
5V
6V
7V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
2.5
5
7.5
10
12.5
15
17.5
20
0
3
6
9
12
15
18
V
DS
- Volts
I
D
- A
m
p
e
r
e
s
V
GS
= 1 0V
9V
8V
7V
6V
5V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
2.5
5
7.5
10
12.5
15
17.5
20
0
1
2
3
4
5
6
7
8
V
DS
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 1 0V
9V
8V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D25
Value vs.
Junction Temperature
0.5
1
1.5
2
2.5
3
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
DS
(
o
n
)
- N
o
rm
a
l
i
z
e
d
I
D
= 20A
I
D
= 1 0A
V
GS
= 1 0V
Fig. 6. Drain Current vs. Case
Temperature
0
4
8
12
16
20
24
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
p
e
r
e
s
Fig. 5. R
DS(on)
Normalized to I
D25
Value vs. I
D
0.5
1
1.5
2
2.5
3
0
10
20
30
40
50
I
D
- Amperes
R
D
S
(
on)
-
N
o
r
m
a
liz
e
d
T
J
= 1 25C
T
J
= 25C
V
GS
= 1 0V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFH 20N60Q
IXFT 20N60Q
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
C
a
pa
c
i
t
a
nc
e -
p
F
C
iss
C
oss
C
rss
f = 1 M Hz
Fig. 10. Gate Charge
0
2
4
6
8
10
0
20
40
60
80
100
Q
G
- nanoCoulombs
V
GS
- V
o
l
t
s
V
DS
= 300V
I
D
= 1 0A
I
G
= 1 0mA
Fig. 7. Input Admittance
0
5
10
15
20
25
30
35
40
3.5
4
4.5
5
5.5
6
6.5
7
V
GS
- Volts
I
D
- A
m
p
e
re
s
T
J
= -40C
25C
1 25C
Fig. 12. Maximum Transient Thermal
Resistance
0.01
0.1
1
1
10
100
1000
Pulse Width - milliseconds
R
(t
h
)
J
C
-
(
C
/
W
)
Fig. 8. Transconductance
0
6
12
18
24
30
36
42
0
10
20
30
40
50
60
I
D
- Amperes
G
fs
- S
i
e
m
e
n
s
T
J
= -40C
25C
1 25C
Fig. 9. Source Current vs. Source-To-Drain
Voltage
0
10
20
30
40
50
60
0.3
0.5
0.7
0.9
1.1
V
SD
- Volts
I
S
- A
m
p
e
re
s
T
J
= 1 25C
T
J
= 25C
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