2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25C to 150C
400
V
V
DGR
T
J
= 25C to 150C; R
GS
= 1 MW
400
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25C
30
A
I
DM
T
C
= 25C, pulse width limited by T
JM
120
A
I
AR
T
C
= 25C
30
A
E
AR
T
C
= 25C
30
mJ
E
AS
1.5
mJ
dv/dt
I
S
I
DM
, di/dt 100 A/ms, V
DD
V
DSS
,
5 V/ns
T
J
150C, R
G
= 2 W
P
D
T
C
= 25C
300
W
T
J
-55 to +150
C
T
JM
150
C
T
stg
-55 to +150
C
T
L
1.6 mm (0.063 in) from case for 10 s 300
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-247 6
g
TO-268 4
g
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
Features
l
IXYS advanced low Q
g
process
l
Low gate charge and capacitances
- easier to drive
- faster switching
l
International standard packages
l
Low R
DS (on)
l
Rated for unclamped Inductive load
switching (UIS) rated
l
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
l
Easy to mount
l
Space savings
l
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250 mA
400
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
4.0
V
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
T
J
= 25C
25
mA
V
GS
= 0 V
T
J
= 125C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
0.16
W
Pulse test, t 300 ms, duty cycle d 2 %
TO-247 AD (IXFH)
G = Gate D = Drain
S = Source TAB = Drain
HiPerFET
TM
Power MOSFETs
Q-Class
TO-268 (D3) ( IXFT)
(TAB)
G
S
V
DSS
= 400 V
I
D25
=
30 A
R
DS(on)
= 0.16
W
t
rr
250 ns
IXFH 30N40Q
IXFT 30N40Q
(TAB)
98754 (10/00)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 30N40Q
IXFT 30N40Q
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C, unless otherwise specified)
min.
typ. max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
18
25
S
C
iss
3300
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
540
pF
C
rss
150
pF
t
d(on)
25
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
35
ns
t
d(off)
R
G
= 2.0 W (External),
51
ns
t
f
12
ns
Q
g(on)
95
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
22
nC
Q
gd
44
nC
R
thJC
0.42 K/W
R
thCK
(TO-247)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25C, unless otherwise specified)
Symbol
Test Conditions
min.
typ. max.
I
S
V
GS
= 0 V
30
A
I
SM
Repetitive; pulse width limited by T
JM
120
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t 300 ms, duty cycle d 2 %
t
rr
1.1
250
ns
Q
RM
I
F
= I
S
, -di/dt = 100 A/ms, V
R
= 100 V
mC
I
RM
10
A
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205
0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232
0.252
R
4.32
5.49
.170
.216
S
6.15
BSC
242
BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
TO-268 Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
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