1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
800
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
W
800
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
7
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
28
A
I
AR
T
C
= 25
C
7
A
E
AR
T
C
= 25
C
18
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
m
s, V
DD
V
DSS
,
5
V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
180
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
1.13/10
Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
HiPerFET
TM
IXFH
7
N80
V
DSS
= 800 V
Power MOSFETs
IXFM
7
N80
I
D (cont)
= 7 A
R
DS(on)
= 1.4
W
t
rr
= 250 ns
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
TO-204 AA (IXFM)
G = Gate,
D = Drain,
S = Source,
TAB = Drain
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
D
G
91527F(7/97)
(TAB)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA
800
V
V
GS(th)
V
DS
= V
GS
, I
D
= 2.5 mA
2
4.5
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
250
m
A
V
GS
= 0 V
T
J
= 125
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
1.4
W
Pulse test, t
300
m
s, duty cycle d
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
4
6
S
C
iss
2800
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
250
pF
C
rss
100
pF
t
d(on)
35
100
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
40
110
ns
t
d(off)
R
G
= 4.7
W
(External)
100
200
ns
t
f
60
100
ns
Q
g(on)
110
130
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
15
30
nC
Q
gd
50
70
nC
R
thJC
0.7
K/W
R
thCK
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
7
A
I
SM
Repetitive; pulse width limited by T
JM
28
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
m
s, duty cycle d
2 %
t
rr
T
J
=
25
C
250
ns
T
J
= 125
C
400
ns
Q
RM
T
J
=
25
C
0.5
m
C
T
J
= 125
C
1.0
m
C
I
RM
T
J
=
25
C
7.5
A
T
J
= 125
C
9.0
A
I
F
= I
S
-di/dt = 100 A/
m
s,
V
R
= 100 V
IXFH 7N80
IXFM 7N80
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
TO-204 AA (IXFM) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
38.61 39.12
1.520 1.540
B
19.43 19.94
- 0.785
C
6.40
9.14
0.252 0.360
D
0.97
1.09
0.038 0.043
E
1.53
2.92
0.060 0.115
F
30.15
BSC
1.187
BSC
G
10.67 11.17
0.420 0.440
H
5.21
5.71
0.205 0.225
J
16.64 17.14
0.655 0.675
K
11.18 12.19
0.440 0.480
Q
3.84
4.19
0.151 0.165
R
25.16 25.90
0.991 1.020
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
2000 IXYS All rights reserved
IXFH 7N80
IXFM 7N80
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
Fig. 5 Drain Current vs.
Fig. 6 Temperature Dependence of
Case Temperature
Breakdown and Threshold Voltage
Fig. 3 R
DS(on)
vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
5V
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
BV
/
V
G(
t
h
)
-
N
o
rm
a
lize
d
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
BV
DSS
T
C
- Degrees C
-50
-25
0
25
50
75
100 125 150
I
D
-
A
m
pe
re
s
0
1
2
3
4
5
6
7
8
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
R
DS
(
o
n)
- N
o
rm
a
liz
ed
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
- Amperes
0
2
4
6
8
10
R
DS
(
o
n)
-
O
h
m
s
1.8
2.0
2.2
2.4
2.6
2.8
3.0
V
GS
= 15V
V
GS
= 10V
V
GS
- Volts
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
I
D
- A
m
p
e
re
s
0
1
2
3
4
5
6
7
8
9
V
DS
- Volts
0
5
10
15
20
25
30
I
D
-
A
m
per
e
s
0
1
2
3
4
5
6
7
8
9
V
GS(th)
V
GS
= 10V
6V
7N80
I
D
= 3.5A
T
J
= 25C
T
J
= 25C
T
J
= 25C
4 - 4
2000 IXYS All rights reserved
IXFH 7N80
IXFM 7N80
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
Fig.11 Transient Thermal Impedance
V
DS
- Volts
1
10
100
1000
I
D
- A
m
p
e
r
e
s
0.1
1
10
Gate Charge - nCoulombs
0
10
20
30
40
50
60
70
80
V
GE
- V
o
lt
s
0
1
2
3
4
5
6
7
8
9
10
V
DS
- Volts
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
- A
m
p
e
re
s
0
1
2
3
4
5
6
7
8
9
V
CE
- Volts
0
5
10
15
20
25
C
apa
ci
t
a
nc
e -
pF
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
Time - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
T
her
m
a
l
Re
s
pon
se
-
K/
W
0.001
0.01
0.1
1
D=0.2
D=0.01
C
rss
C
oss
C
iss
V
DS
= 500V
I
D
= 3.5A
I
G
= 10mA
Limited by R
DS(on)
10s
100s
1ms
10ms
100ms
f = 1MHz
V
DS
= 25V
T
J
= 25C
T
J
= 125C
Single Pulse
D=0.5
D=0.02
D=0.05
D=0.1
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