2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
300
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
300
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
102
A
I
D(RMS)
External lead current limit
75
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
250
A
I
AR
T
C
= 25
C
60
A
E
AR
T
C
= 25
C
60
mJ
E
AS
T
C
= 25
C
2.5
J
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
10
V/ns
T
J
150
C, R
G
= 4
P
D
T
C
= 25
C
700
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-264
10
g
SOT-227B 30 g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99221A(02/05)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
300
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.5
5.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
200
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 125
C
250
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
33
m
Pulse test, t
300
s, duty cycle d
2 %
PolarHT
TM
HiPerFET
Power MOSFET
IXFK 102N30P
IXFN 102N30P
Advanced Technical Information
N-Channel Enhancement Mode
Fast Intrinsic Diode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
V
DSS
= 300 V
I
D25
= 102 A
R
DS(on)
= 33 m
TO-264(SP) (IXFK)
(TAB)
G
D
S
t
rr
200 ns
G
D
S
S
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate
D = Drain
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 102N30P
IXFN 102N30P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
45
57
S
C
iss
7500
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1150
pF
C
rss
230
pF
t
d(on)
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A
28
ns
t
d(off)
R
G
= 3.3
(External)
130
ns
t
f
30
ns
Q
g(on)
224
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
50
nC
Q
gd
110
nC
R
thJC
0.18 K/W
R
thCK
TO-264
0.15
K/W
R
thCK
SOT-227B 0.05 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
102
A
I
SM
Repetitive
250
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
I
F
= 25 A
200 ns
-di/dt = 100 A/
s
Q
RM
V
R
= 100 V
0.8
C
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478 B2
SOT-227B Outline
TO-264 AA Outline
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
2005 IXYS All rights reserved
IXFK 102N30P
IXFN 102N30P
Fig. 2. Extended Output Characteristics
@ 25
C
0
25
50
75
100
125
150
175
200
225
250
0
2
4
6
8
10
12
14
16
18
20
V
DS
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
9V
7V
6V
8V
5V
Fig. 3. Output Characteristics
@ 125
C
0
10
20
30
40
50
60
70
80
90
100
110
0
1
2
3
4
5
6
7
8
9
V
DS
- Volts
I
D
- A
m
p
e
r
e
s
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 1. Output Characteristics
@ 25
C
0
10
20
30
40
50
60
70
80
90
100
110
0
0.5
1
1.5
2
2.5
3
3.5
4
V
DS
- Volts
I
D
- A
m
p
e
r
e
s
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
on)
- N
o
rm
a
l
i
z
e
d
I
D
= 102A
I
D
= 51A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
90
100
110
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
- A
m
p
e
r
e
s
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
25
50
75
100 125 150 175 200 225 250
I
D
- Amperes
R
DS
(
o
n
)
- N
o
rm
a
l
i
z
e
d
T
J
= 125C
T
J
= 25C
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 102N30P
IXFN 102N30P
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
C
apac
i
t
an
c
e
-
pi
c
o
F
a
r
ads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
25
50
75
100
125
150
175
200
225
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 150V
I
D
= 51A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
25
50
75
100
125
150
3.5
4
4.5
5
5.5
6
6.5
7
7.5
V
GS
- Volts
I
D
- A
m
p
e
re
s
T
J
= 125C
25C
-40C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
175
200
I
D
- Amperes
g
fs
-
S
i
em
ens
T
J
= -40C
25C
125C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
0.4
0.6
0.8
1
1.2
1.4
V
SD
- Volts
I
S
-
A
m
per
es
T
J
= 125C
T
J
= 25C
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
10
100
1000
V
DS
- Volts
I
D
-
A
m
per
es
100s
1ms
DC
T
J
= 150C
T
C
= 25C
R
DS(on)
Limit
10ms
25s
2005 IXYS All rights reserved
IXFK 102N30P
IXFN 102N30P
Fig. 13. Maxim um Transient Therm al Resistance
0.01
0.10
1.00
1
10
100
1000
Pulse Width - milliseconds
R
(th)J
C
-
C
/W
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