1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
150
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
W
150
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C (MOSFET chip capability)
150
A
I
D(RMS)
External lead (current limit)
76
A
I
DM
T
C
= 25
C, Note 1
600
A
I
AR
T
C
= 25
C
150
A
E
AR
T
C
= 25
C
60
mJ
E
AS
T
C
= 25
C
3
J
dv/dt
I
S
I
DM
, di/dt
100 A/
m
s, V
DD
V
DSS
5
V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
560
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in.) from case for 10 s
300
C
M
d
Mounting torque
TO-264
0.9/6
Nm/lb.in.
Weight
PLUS 247
6
g
TO-264
10 g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
150
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA
2.0
4.0 V
I
GSS
V
GS
=
20 V, V
DS
= 0
100 nA
I
DSS
V
DS
= V
DSS
T
J
= 25
C
100
m
A
V
GS
= 0 V
T
J
= 125
C
2 mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
12.5 m
W
Note 1
Single MOSFET Die
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
HiPerFET
TM
Power MOSFETs
98654 (9/99)
PLUS 247
TM
(IXFX)
G
D
D (TAB)
G = Gate
D = Drain
S = Source
TAB = Drain
IXFK 150N15
V
DSS
= 150 V
IXFX 150N15
I
D25
= 150 A
R
DS(on)
= 12.5 m
W
t
rr
250 ns
S
G
D
(TAB)
TO-264 AA (IXFK)
Preliminary data sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 60A
Note 2
50
75
S
C
iss
9100
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2600
pF
C
rss
1200
pF
t
d(on)
50
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
60
ns
t
d(off)
R
G
= 1
W
(External),
110
ns
t
f
45
ns
Q
g(on)
360
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
65
nC
Q
gd
190
nC
R
thJC
0.22
K/W
R
thCK
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
150
A
I
SM
Repetitive;
600
A
pulse width limited by T
JM
V
SD
I
F
= 100A, V
GS
= 0 V, Note 1
1.5
V
t
rr
250
ns
Q
RM
1.1
m
C
I
RM
13
A
I
F
= 50A,-di/dt = 100 A/
m
s, V
R
= 50 V
Note: 1. Pulse width limited by T
JM
2. Pulse test, t
300
m
s, duty cycle d
2 %
IXFK 150N15
IXFX 150N15
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
TO-264 AA Outline
PLUS247
TM
(IXFX) Outline)
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190 .205
A
1
2.29
2.54
.090 .100
A
2
1.91
2.16
.075 .085
b
1.14
1.40
.045 .055
b
1
1.91
2.13
.075 .084
b
2
2.92
3.12
.115 .123
C
0.61
0.80
.024 .031
D
20.80
21.34
.819 .840
E
15.75
16.13
.620 .635
e 5.45 BSC
.215 BSC
L
19.81
20.32
.780 .800
L1
3.81
4.32
.150 .170
Q
5.59
6.20
.220 .244
R
4.32
4.83
.170 .190
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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