1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
550
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
W
550
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
48
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
192
A
I
AR
T
C
= 25
C
44
A
E
AR
T
C
= 25
C
60
mJ
E
AS
T
C
= 25
C
3
J
dv/dt
I
S
I
DM
, di/dt
100 A/
m
s, V
DD
V
DSS
5
V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
560
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in.) from case for 10 s
300
C
M
d
Mounting torque
TO-264
0.9/6 Nm/lb.in.
Weight
PLUS 247
6
g
TO-264
10
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
550
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA
2.5
4.5 V
I
GSS
V
GS
=
20 V, V
DS
= 0
200 nA
I
DSS
V
DS
= V
DSS
100
m
A
V
GS
= 0 V
T
J
= 125
C
2 mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
110 m
W
Note 1
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
HiPerFET
TM
Power MOSFETs
Single MOSFET Die
Avalanche Rated
98712 (3/24/00)
PLUS 247
TM
(IXFK)
G
D
(TAB)
G = Gate
D = Drain
S = Source
TAB = Drain
V
DSS
= 550
V
I
D25
= 48
A
R
DS(on)
= 110 m
W
t
rr
250 ns
S
G
D
(TAB)
TO-264 AA (IXFK)
Preliminary data
IXFK 48N55
IXFX 48N55
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
Note 1
30
40
S
C
iss
8900
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1000
pF
C
rss
330
pF
t
d(on)
42
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
55
ns
t
d(off)
R
G
= 1
W
(External),
110
ns
t
f
45
ns
Q
g(on)
330
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
60
nC
Q
gd
65
nC
R
thJC
0.22
K/W
R
thCK
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
48
A
I
SM
Repetitive;
192
A
pulse width limited by T
JM
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.3
V
t
rr
250
ns
Q
RM
1.4
m
C
I
RM
8
A
I
F
= I
S
, -di/dt = 100 A/
m
s, V
R
= 100 V
Note: 1. Pulse test, t
300
m
s, duty cycle d
2 %
IXFK 48N55
IXFX 48N55
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190 .205
A
1
2.29
2.54
.090 .100
A
2
1.91
2.16
.075 .085
b
1.14
1.40
.045 .055
b
1
1.91
2.13
.075 .084
b
2
2.92
3.12
.115 .123
C
0.61
0.80
.024 .031
D
20.80
21.34
.819 .840
E
15.75
16.13
.620 .635
e 5.45 BSC
.215 BSC
L
19.81
20.32
.780 .800
L1
3.81
4.32
.150 .170
Q
5.59
6.20
.220 .244
R
4.32
4.83
.170 .190
PLUS247
TM
(IXFX) Outline
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
TO-264 AA Outline
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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