2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
1000
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
1000
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
21
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
84
A
I
AR
T
C
= 25
C
21
A
E
AR
T
C
= 25
C
60
mJ
E
AS
2.5
J
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
5
V/ns
T
J
150
C, R
G
= 2
P
D
T
C
= 25
C
520
W
T
J
-55 to +150
C
T
JM
150
C
T
stg
-55 to +150
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque
1.5/13
Nm/lb.in.
Terminal connection torque
1.5/13
Nm/lb.in.
Weight
30
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
1000
V
V
GS(th)
V
DS
= V
GS
, I
D
= 1.5 mA
2.5
4.5
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
100
A
V
GS
= 0 V
T
J
= 125
C
2
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
0.50
Pulse test, t
300
s, duty cycle d
2 %
HiPerFET
TM
Power MOSFETs
Q-Class
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
V
DSS
= 1000 V
I
D25
= 21 A
R
DS(on)
= 0.50
t
rr
250 ns
IXFN 21N100Q
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
Features
IXYS advanced low Q
g
process
Low gate charge and capacitances
- easier to drive
-faster switching
Unclamped Inductive Switching (UIS)
rated
Low R
DS (on)
Fast intrinsic diode
International standard package
miniBLOC
with Aluminium nitride
isolation for low thermal resistance
Low terminal inductance (<10 nH) and
stray capacitance to heatsink (<35pf)
Molding epoxies meet UL 94 V-0
flammability classification
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
G = Gate
D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
98762A (12/01)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
16
22
S
C
iss
5900
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
550
pF
C
rss
90
pF
t
d(on)
21
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
18
ns
18
t
d(off)
R
G
= 1
(External)
60
ns
t
f
12
ns
Q
g(on)
170
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
38
nC
Q
gd
75
nC
R
thJC
0.24
K/W
R
thCK
0.05
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
21
A
I
SM
Repetitive; pulse width limited by T
JM
84
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
250
ns
Q
RM
I
F
= I
S
, -di/dt = 100 A/
s, V
R
= 100 V
1.4
C
I
RM
8
A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
31.50
31.88
1.240
1.255
B
7.80
8.20
0.307
0.323
C
4.09
4.29
0.161
0.169
D
4.09
4.29
0.161
0.169
E
4.09
4.29
0.161
0.169
F
14.91
15.11
0.587
0.595
G30.12
30.30
1.186
1.193
H
38.00
38.23
1.496
1.505
J
11.68
12.22
0.460
0.481
K
8.92
9.60
0.351
0.378
L
0.76
0.84
0.030
0.033
M
12.60
12.85
0.496
0.506
N
25.15
25.42
0.990
1.001
O
1.98
2.13
0.078
0.084
P
4.95
5.97
0.195
0.235
Q
26.54
26.90
1.045
1.059
R
3.94
4.42
0.155
0.174
S
4.72
4.85
0.186
0.191
T
24.59
25.07
0.968
0.987
U
-0.05
0.1
-0.002
0.004
IXFN 21N100Q
2001 IXYS All rights reserved
V
GS
- Volts
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
I
D
- A
m
p
e
r
e
s
0
4
8
12
16
20
24
T
C
- Degrees C
-50 -25
0
25
50
75 100 125 150
I
D
-
A
m
per
e
s
0
5
10
15
20
25
T
J
- Degrees C
25
50
75
100
125
150
R
DS
(
O
N)
-
N
o
rm
aliz
ed
1.0
1.4
1.8
2.2
2.6
I
D
- Amperes
0
10
20
30
R
DS
(
O
N)
-
N
o
rm
aliz
ed
0.8
1.2
1.6
2.0
2.4
2.8
V
DS
- Volts
0
5
10
15
20
25
30
I
D
-
A
m
peres
0
5
10
15
20
25
30
35
T
J
= 125
O
C
4V
4V
5V
V
GS
= 9V
8V
7V
6V
5V
T
J
= 25
o
C
V
GS
= 10V
V
GS
= 10V
V
DS
- Volts
0
5
10
15
20
I
D
- A
m
peres
0
5
10
15
20
25
30
35
V
GS
= 9V
8V
7V
6V
T
J
= 25
O
C
I
D
= 21A
I
D
=10.5A
T
J
= 25
O
C
T
J
= 150
o
C
T
J
= 125
O
C
T
J
= 125
O
C
IXFN 21N100Q
Fig.2 Output Characteristics @ T
j
= 125C
Fig.4 Temperature Dependence of Drain
to Source Resistance
Fig.6 Drain Current vs Gate Source Voltage
Fig.1 Output Characteristics @ T
j
= 25C
Fig.3 R
DS(on)
vs. Drain Current
Fig.5 Drain Current vs. Case Temperature
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
V
SD
- Volts
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
-
A
m
p
e
re
s
0
20
40
60
80
Pulse Width - Seconds
10
-4
10
-3
10
-2
10
-1
10
0
10
1
R(
t
h
)
JC
- K/
W
0.001
0.010
0.100
1.000
V
DS
- Volts
0
5
10
15
20
25
30
35
40
Cap
acit
a
nce -
pF
100
1000
10000
Gate Charge - nC
0
40
80
120
160
200
V
GS
-
Volt
s
0
2
4
6
8
10
Crss
Coss
V
DS
= 500 V
I
D
= 21 A
I
G
= 10 mA
f = 100kHz
T
J
= 125
O
C
T
J
= 25
O
C
Ciss
30000
IXFN 21N100Q
Fig.7 Gate Charge Characteristic Curve
Fig.8 Capacitance Curves
Fig.9 Drain Current vs Drain to Source Voltage
Fig.10 Transient Thermal Impedance
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