2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
300
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
300
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
60
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
250
A
I
AR
T
C
= 25
C
60
A
E
AR
T
C
= 25
C
60
mJ
E
AS
T
C
= 25
C
2.5
J
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
10
V/ns
T
J
150
C, R
G
= 4
P
D
T
C
= 25
C
300
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
V
ISOL
50/60 Hz, RMS, 1 minute
2500
V~
F
C
Mounting force
22..130/5..29
N/lb
Weight
5
g
DS99247(03/05)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
300
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.5
5.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
200
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 125
C
250
A
R
DS(on)
V
GS
= 10 V, I
D
= 51 A
36 m
Pulse test, t
300
s, duty cycle d
2 %
PolarHT
TM
HiPerFET
Power MOSFET
IXFR 102N30P
Advanced Technical Information
N-Channel Enhancement Mode
Fast Intrinsic Diode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
V
DSS
= 300 V
I
D25
= 60
A
R
DS(on)
= 36 m
t
rr
200 ns
G = Gate
D = Drain
S = Source
S
G
D
ISOPLUS247 (IXFR)
E153432
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR 102N30P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 51 A, pulse test
45
57
S
C
iss
7500
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1150
pF
C
rss
230
pF
t
d(on)
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 51 A
28
ns
t
d(off)
R
G
= 3.3
(External)
130
ns
t
f
30
ns
Q
g(on)
224
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 51 A
50
nC
Q
gd
110
nC
R
thJC
0.42 K/W
R
thCK
0.15
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
102
A
I
SM
Repetitive
250
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
I
F
= 25 A
200 ns
-di/dt = 100 A/
s
Q
RM
V
R
= 100 V
0.8
C
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478 B2
ISOPLUS247 Outline
2005 IXYS All rights reserved
IXFR 102N30P
Fig. 2. Extended Output Characteristics
@ 25
C
0
25
50
75
100
125
150
175
200
225
250
0
2
4
6
8
10
12
14
16
18
20
V
DS
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 10V
9V
7V
6V
8V
5V
Fig. 3. Output Characteristics
@ 125
C
0
10
20
30
40
50
60
70
80
90
100
110
0
1
2
3
4
5
6
7
8
9
V
DS
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 1. Output Characteristics
@ 25
C
0
10
20
30
40
50
60
70
80
90
100
110
0
0.5
1
1.5
2
2.5
3
3.5
4
V
DS
- Volts
I
D
-
A
m
per
e
s
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Temperature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
on)
- N
o
rm
a
l
i
z
e
d
I
D
= 102A
I
D
= 51A
V
GS
= 10V
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
25
50
75
100 125 150 175 200 225 250
I
D
- Amperes
R
D
S
(
on)
-
N
o
r
m
aliz
e
d
T
J
= 125C
T
J
= 25C
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
per
e
s
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR 102N30P
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
C
apac
i
t
anc
e -
pi
c
o
F
a
r
ads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
25
50
75
100
125
150
175
200
225
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 150V
I
D
= 51A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
25
50
75
100
125
150
3.5
4
4.5
5
5.5
6
6.5
7
7.5
V
GS
- Volts
I
D
-
A
m
per
es
T
J
= 125C
25C
-40C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
175
200
I
D
- Amperes
g
fs
-
S
i
em
ens
T
J
= -40C
25C
125C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
0.4
0.6
0.8
1
1.2
1.4
V
SD
- Volts
I
S
-
A
m
per
es
T
J
= 125C
T
J
= 25C
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
10
100
1000
V
DS
- Volts
I
D
-
A
m
per
es
100s
1ms
DC
T
J
= 150C
T
C
= 25C
R
DS(on)
Limit
10ms
25s
2005 IXYS All rights reserved
IXFR 102N30P
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
0.01
0.10
1.00
1
10
100
1000
Pulse Width - milliseconds
R
(th)JC
-
C/
W
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