1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
100
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
W
100
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C (MOSFET chip capability)
180
A
I
D(RMS)
External lead (current limit)
76
A
I
DM
T
C
= 25
C, Note 1
720
A
I
AR
T
C
= 25
C
180
A
E
AR
T
C
= 25
C
60
mJ
E
AS
T
C
= 25
C
3
J
dv/dt
I
S
I
DM
, di/dt
100 A/
m
s, V
DD
V
DSS
5
V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
560
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in.) from case for 10 s
300
C
M
d
Mounting torque
TO-264
0.9/6
Nm/lb.in.
Weight
PLUS 247
6
g
TO-264
10 g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
100
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA
2.0
4.0 V
I
GSS
V
GS
=
20 V, V
DS
= 0
100 nA
I
DSS
V
DS
= V
DSS
T
J
= 25
C
100
m
A
V
GS
= 0 V
T
J
= 125
C
2 mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
8 m
W
Note 1
Single MOSFET Die
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
HiPerFET
TM
Power MOSFETs
98552B (7/99)
PLUS 247
TM
(IXFX)
G
D
D (TAB)
G = Gate
D = Drain
S = Source
TAB = Drain
IXFK 180N10
V
DSS
= 100 V
IXFX 180N10
I
D25
= 180 A
R
DS(on)
=
8 m
W
t
rr
250 ns
S
G
D
(TAB)
TO-264 AA (IXFK)
Preliminary data sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 60A
Note 2
60
90
S
C
iss
9100
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
3200
pF
C
rss
1660
pF
t
d(on)
50
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
90
ns
t
d(off)
R
G
= 1
W
(External),
140
ns
t
f
65
ns
Q
g(on)
360
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
65
nC
Q
gd
190
nC
R
thJC
0.22
K/W
R
thCK
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
180
A
I
SM
Repetitive;
720
A
pulse width limited by T
JM
V
SD
I
F
= 100A, V
GS
= 0 V, Note 1
1.5
V
t
rr
250
ns
Q
RM
1.1
m
C
I
RM
13
A
I
F
= 50A,-di/dt = 100 A/
m
s, V
R
= 50 V
Note: 1. Pulse width limited by T
JM
2. Pulse test, t
300
m
s, duty cycle d
2 %
IXFK 180N10
IXFX 180N10
PLUS247
TM
(IXFX) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190 .205
A
1
2.29
2.54
.090 .100
A
2
1.91
2.16
.075 .085
b
1.14
1.40
.045 .055
b
1
1.91
2.13
.075 .084
b
2
2.92
3.12
.115 .123
C
0.61
0.80
.024 .031
D
20.80
21.34
.819 .840
E
15.75
16.13
.620 .635
e 5.45 BSC
.215 BSC
L
19.81
20.32
.780 .800
L1
3.81
4.32
.150 .170
Q
5.59
6.20
.220 .244
R
4.32
4.83
.170 .190
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
TO-264 AA (IXFK) Outline
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
2000 IXYS All rights reserved
T
C
- Degrees C
-50 -25
0
25
50
75 100 125 150
I
D
- A
m
per
e
s
0
25
50
75
100
V
DS
- Volts
0
1
2
3
4
5
I
D
- A
m
per
e
s
0
50
100
150
200
V
GS
- Volts
2
4
6
8
I
D
- A
m
per
e
s
0
20
40
60
80
100
T
J
- Degrees C
25
50
75
100
125
150
R
DS
(
O
N)
-
No
r
m
a
liz
e
d
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
D
- Amperes
0
50
100
150
200
R
DS
(
O
N)
-
N
o
r
m
a
liz
e
d
0.8
1.0
1.2
1.4
1.6
1.8
V
DS
- Volts
0.0
0.5
1.0
1.5
2.0
I
D
- A
m
per
e
s
0
50
100
150
200
5V
V
GS
= 10V
V
GS
=10V
9V
8V
T
J
=125
O
C
T
J
=25
O
C
6V
6V
5V
T
J
= 25
o
C
I
D
=180A
T
J
= 25
O
C
T
J
= 125
o
C
V
GS
=10V
9V
8V
T
J
= 125
O
C
7V
7V
V
GS
=10V
V
GS
=15V
V
GS
=10V
V
GS
=15V
I
D
=90A
Lead Current Limit
IXF 180N10 P1
Figure 3. R
DS(on)
normalized to 15A/25
O
C vs. I
D
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
Figure 1. Output Characteristics at 25
O
C
Figure 2. Output Characteristics at 125
O
C
Figure 4. R
DS(on)
normalized to 15A/25
O
C vs. T
J
IXFK 180N10
IXFX 180N10
4 - 4
2000 IXYS All rights reserved
Pulse Width - Seconds
10
-3
10
-2
10
-1
10
0
10
1
R(th)
JC
- K
/
W
0.02
0.04
0.06
0.08
0.20
0.40
0.01
0.10
V
DS
- Volts
0
5
10
15
20
25
30
35
40
C
a
p
a
c
i
t
a
nc
e
-
pF
1000
10000
V
SD
- Volts
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
- A
m
p
e
r
e
s
0
25
50
75
100
125
150
175
200
Gate Charge - nC
0
50
100 150 200 250 300 350 400
V
GS
-
Vo
lt
s
0
3
6
9
12
15
Crss
Coss
Ciss
T
J
=25
O
C
V
DS
=50V
I
D
=90A
I
G
=10mA
F = 100kHz
V
DS
- Volts
1
10
100
I
D
- A
m
per
e
s
1
10
100
T
C
= 25
O
C
10 ms
1 ms
DC
200
V
GS
= 0V
T
J
=125
O
C
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the Intrinsic Diode
Figure 10. Forward Bias Safe Operating Area
Figure 11. Transient Thermal Resistance
R
i
:
0.02
0.046
0.154
t
i
:
0.007
0.01
0.25
R(th)
JC
=
S
R
i
{1-exp(-t/
t
i
)}
i=1
3
IXFK 180N10
IXFX 180N10
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