1 - 2
2000 IXYS All rights reserved
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
TO-264 AA (IXFK)
Features
International standard packages
Encapsulating
epoxy
meets
UL
94
V-0, flammability classification
miniBLOC
with Aluminium nitride
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
S
G
D
D (TAB)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
600
V
V
GH(th)
V
DS
= V
GS
, I
D
= 8mA
2
4
V
I
GSS
V
GS
=
20 V
GE
= 0
200
nA
I
DSS
V
DS
= 0.8 V
DSS
V
T
J
= 25
C
400
m
A
V
GS
= 0 V
T
J
= 125
C
2
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
43N60
0.13
W
Pulse test, t
300 ms,
40N60
0.15
W
duty cycle d
2 %
97503 A(7/97)
HiPerFET
TM
Power MOSFET
Single MOSFET Die
ADVANCE INFORMATION
Symbol
Test Conditions
Maximum Ratings
IXFK
IXFK
IXFN
IXFN
43N60 40N60
43N60
40N60
V
DSS
T
J
= 25C to 150C
600
600
V
V
DGR
T
J
= 25C to 150C
600
600
V
V
GS
Continuous
20
20
V
V
GSM
Transient
30
30
V
I
D25
T
C
= 25
C
43
40
43
40
A
I
DM
T
C
= 25
C
172
160
172
160
A
I
AR
T
C
= 25
C
43
40
43
40
A
E
AR
T
C
= 25
C
60
60
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
m
s, V
DD
V
DSS
5
5
V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
560
600
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in) from case for 10 s
300
N/A
C
V
ISOL
50/60 Hz, RMS
t = 1 min
N/A
2500
V~
I
ISOL
1 mA
t = 1 s
N/A
3000
V~
M
d
Mounting torque
0.9/6
1.5/13 Nm/lb.in.
Terminal connection torque
N/A
1.5/13 Nm/lb.in.
Weight
10
30
g
V
DSS
I
D25
R
DS(on)
t
rr
IXFN 43N60
600V
43A
0.13
W
200ns
IXFN 40N60
600V
40A
0.15
W
200ns
IXFK 43N60
600V
43A
0.13
W
200ns
IXFK 40N60
600V
40A
0.15
W
200ns
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
TBD
S
C
iss
TBD
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
TBD
pF
C
rss
TBD
pF
t
d(on)
TBD
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
TBD
ns
t
d(off)
R
G
= 1
(External),
TBD
ns
t
f
TBD
ns
Q
g(on)
TBD
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
TBD
nC
Q
gd
TBD
nC
R
thJC
TO-264 AA
0.22
K/W
R
thCK
TO-264 AA
0.15
K/W
R
thJC
miniBLOC, SOT-227 B
0.21
K/W
R
thCK
miniBLOC, SOT-227 B
0.05
K/W
Source-Drain Diode
(T
J
= 25
C, unless otherwise specified)
Characteristic Values
Symbol
Test Conditions
Min.
Typ.
Max.
I
S
V
GS
= 0
43N60
43
A
40N60
40
A
I
SM
Repetitive;
43N60
172
A
pulse width limited by T
JM
40N60
160
A
V
SD
I
F
= 100 A, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
TBD
ns
Q
RM
I
F
= 50 A, -di/dt = 100 A/
s, V
R
= 100 V
TBD
C
I
RM
TBD
A
Notes: 1.
R
GS
= 1 M
2.
Pulse width limited by T
JM.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
TO-264 AA Outline
M4 screws (4x) supplied
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
31.50
31.88
1.240
1.255
B
7.80
8.20
0.307
0.323
C
4.09
4.29
0.161
0.169
D
4.09
4.29
0.161
0.169
E
4.09
4.29
0.161
0.169
F
14.91
15.11
0.587
0.595
G
30.12
30.30
1.186
1.193
H
38.00
38.23
1.496
1.505
J
11.68
12.22
0.460
0.481
K
8.92
9.60
0.351
0.378
L
0.76
0.84
0.030
0.033
M
12.60
12.85
0.496
0.506
N
25.15
25.42
0.990
1.001
O
1.98
2.13
0.078
0.084
P
4.95
5.97
0.195
0.235
Q
26.54
26.90
1.045
1.059
R
3.94
4.42
0.155
0.174
S
4.72
4.85
0.186
0.191
T
24.59
25.07
0.968
0.987
U
-0.05
0.1
-0.002
0.004
miniBLOC, SOT-227 B
IXFK43N60
IXFN43N60
IXFK40N60
IXFN40N60
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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