1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
200
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
W
200
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
80
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
320
A
I
AR
T
C
= 25
C
80
A
E
AR
T
C
= 25
C
45
mJ
E
AS
T
C
= 25
C
1.5
J
dv/dt
I
S
I
DM
, di/dt
100 A/
m
s, V
DD
V
DSS
,
5
V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
360
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in) from case for 10 s
300
C
M
d
Mounting torque
TO-247
1.13/10 Nm/lb.in.
TO-264
0.9/6 Nm/lb.in.
Weight
TO-247
6
g
TO-264
10
g
TO-268
4
g
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250 uA
200
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
4.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
T
J
= 25
C
25
m
A
V
GS
= 0 V
T
J
= 125
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
28 m
W
Pulse test, t
300
m
s, duty cycle d
2 %
G = Gate
S = Source
TAB = Drain
98605A (6/99)
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
(TAB)
G
S
TO-264 AA (IXFK)
S
G
D
D (TAB)
V
DSS
= 200 V
I
D25
= 80 A
R
DS(on)
= 28 m
W
t
rr
200 ns
Preliminary data sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
Features
Low gate charge
International standard packages
Epoxy
meet
UL
94
V-0, flammability
classification
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
Easy to mount
Space savings
High power density
IXFH 80N20Q
IXFK 80N20Q
IXFT 80N20Q
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
35
45
S
C
iss
4600
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1100
pF
C
rss
500
pF
t
d(on)
26
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
50
ns
t
d(off)
R
G
= 2.0
W
(External),
75
ns
t
f
20
ns
Q
g(on)
180
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
39
nC
Q
gd
100
nC
R
thJC
0.35
K/W
R
thCK
TO-247
0.25
K/W
TO-264
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ. max.
I
S
V
GS
= 0 V
80
A
I
SM
Repetitive; pulse width limited by T
JM
320
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
m
s, duty cycle d
2 %
t
rr
200 ns
Q
RM
1.2
m
C
I
RM
10
A
I
F
= I
S
-di/dt = 100 A/
m
s, V
R
= 100 V
IXFH 80N20Q IXFK 80N20Q
IXFT 80N20Q
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e 5.45 BSC .215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3 0.25 BSC .010 BSC
L4
3.80
4.10
.150
.161
TO-268AA (D
3
PAK)
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
TO-264 AA (IXFK) Outline
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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