2002 IXYS All rights reserved
98563A (06/02)
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25C to 150C
600
V
V
CGR
T
J
= 25C to 150C; R
GE
= 1 M
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25C
14
A
I
C90
T
C
= 90C
7
A
I
CM
T
C
= 25C, 1 ms
30
A
SSOA
V
GE
= 15 V, T
VJ
= 125C, R
G
= 22
I
CM
= 14
A
(RBSOA)
Clamped inductive load, L = 300
H
@ 0.8 V
CES
P
C
T
C
= 25C
54
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque, (TO-220)
3
0.45/4
Nm/lb.in.
3.5 0.55/5
Weight
TO-220
4
g
TO-263
2
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 250
A, V
CE
= V
GE
2.5
5.5
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25C
100
A
V
GE
= 0 V
T
J
= 125C
500
A
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
1.8
2.0
V
Features
International standard packages
JEDEC TO-263 surface
mountable and JEDEC TO-220 AB
Medium frequency IGBT
High current handling capability
HiPerFAST
TM
HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Suitable for surface mounting
Very low switching losses for high
frequency applications
HiPerFAST
TM
IGBT
IXGA 7N60B
IXGP 7N60B
V
CES
= 600 V
I
C25
= 14 A
V
CE(sat)
= 2 V
t
fi
= 150 ns
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
G
E
C (TAB)
TO-263 AA (IXGA)
G C
E
TO-220AB (IXGP)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXGA 7N60B
IXGP 7N60B
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
3
7
S
Pulse test, t
300
s, duty cycle
2 %
C
ies
500
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
50
pF
C
res
17
pF
Q
g
25
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
5
nC
Q
gc
10
nC
t
d(on)
9
ns
t
ri
10
ns
E
on
0.07
mJ
t
d(off)
100
200
ns
t
fi
150
250
ns
E
off
0.3
0.6
mJ
t
d(on)
10
ns
t
ri
15
ns
E
on
0.15
mJ
t
d(off)
200
ns
t
fi
250
ns
E
off
0.6
mJ
R
thJC
2.3 K/W
R
thCK
(TO-220)
0.25
K/W
Inductive load, T
J
= 25C
I
C
= I
C90
, V
GE
= 15 V, L = 300
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 22
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125C
I
C
= I
C90
, V
GE
= 15 V, L = 300
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 22
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
TO-220 AB Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
12.70
13.97
0.500
0.550
B
14.73
16.00
0.580
0.630
C
9.91
10.66
0.390
0.420
D
3.54
4.08
0.139
0.161
E
5.85
6.85
0.230
0.270
F2.54
3.18
0.100
0.125
G
1.15
1.65
0.045
0.065
H
2.79
5.84
0.110
0.230
J
0.64
1.01
0.025
0.040
K
2.54
BSC
0.100
BSC
M
4.32
4.82
0.170
0.190
N
1.14
1.39
0.045
0.055
Q
0.35
0.56
0.014
0.022
R
2.29
2.79
0.090
0.110
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
TO-263 AA Outline
Pins:
1 - Gate
2 - Collector
3 - Emitter
4 - Collector
Bottom Side
Min. Recommended Footprint
(Dimensions in inches and mm)
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