2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
24
A
I
C90
T
C
= 90
C
12
A
I
CM
T
C
= 25
C, 1 ms
48
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 33
I
CM
= 24
A
(RBSOA)
Clamped inductive load, L = 300
H
@ 0.8 V
CES
P
C
T
C
= 25
C
100
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque with screw M3
0.45/4 Nm/lb.in.
Mounting torque with screw M3.5
0.55/5 Nm/lb.in.
Weight
6
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Features
l
Very high frequency IGBT
l
New generation HDMOS
TM
process
l
International standard package
JEDEC TO-247AD
l
High peak current handling capability
Applications
l
PFC circuit
l
AC motor speed control
l
DC servo and robot drives
l
Switch-mode and resonant-mode
power supplies
l
High power audio amplifiers
Advantages
l
Fast switching speed
l
High power density
98623A (2/02)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 250
A, V
GE
= V
GE
2.5
5.0
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
200
A
V
GE
= 0 V
T
J
= 125
C
1.5
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
CE90
, V
GE
= 15 V
2.1
2.7
V
C (TAB)
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
G
C
E
TO-247 AD
HiPerFAST
TM
IGBT
Lightspeed
TM
Series
V
CES
= 600 V
I
C25
=
24
A
V
CE(sat)
= 2.7 V
t
fi(typ)
=
55 ns
IXGH 12N60CD1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
5
11
S
Pulse test, t
300
s, duty cycle
2 %
C
ies
860
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
100
pF
C
res
15
pF
Q
g
32
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
10
nC
Q
gc
10
nC
t
d(on)
20
ns
t
ri
20
ns
t
d(off)
60
ns
t
fi
55
ns
E
off
0.09
mJ
t
d(on)
20
ns
t
ri
20
ns
E
on
0.5
mJ
t
d(off)
85
180
ns
t
fi
85
180
ns
E
off
0.27
0.60
mJ
R
thJC
IGBT
1.25
K/W
R
thCK
0.25
K/W
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V, L = 300
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 18
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V, L = 300
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 18
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
e
P
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= 15A; T
VJ
= 150
C
1.7
V
T
VJ
= 25
C
2.5
V
I
RM
V
R
= 100 V; I
F
=25A; -di
F
/dt = 100 A/
s
2
2.5
A
L < 0.05
H
; T
VJ
= 100
C
t
rr
I
F
= 1 A; -di/dt = 50 A/
s;
V
R
= 30 V T
J
= 25
C
35
ns
R
thJC
Diode
1.6 K/W
IXGH 12N60CD1
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