2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600 V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
600 V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
48
A
I
C90
T
C
= 90
C
24
A
I
CM
T
C
= 25
C, 1 ms
96
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 22
I
CM
= 48
A
(RBSOA)
Clamped inductive load
@ 0.8 V
CES
P
C
T
C
= 25
C
150
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque (M3)
1.13/10
Nm/lb.in.
Weight
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 250
A, V
CE
= V
GE
2.5
5.5
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
200
A
V
GE
= 0 V
T
J
= 125
C
1
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.3
V
95584C(12/02)
Features
International standard packages
JEDEC TO-247 SMD surface
mountable and
JEDEC TO-247 AD
High frequency IGBT
High current handling capability
3rd generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
High power density
Switching speed for high frequency
applications
Easy to mount with 1 screw
(insulated mounting screw hole)
TO-247 AD
C (TAB)
G
C
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
HiPerFAST
TM
IGBT
IXGH 24N60B
V
CES
= 600 V
I
C25
= 48 A
V
CE(sat)
= 2.3 V
t
fi
= 80 ns
Preliminary Data
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXGH 24N60B
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ. max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
9
13
S
Pulse test, t
300
s, duty cycle
2 %
C
ies
1500
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
175
pF
C
res
40
pF
Q
g
90
120 nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
11
15 nC
Q
gc
30
40 nC
t
d(on)
25
ns
t
ri
15
ns
E
on
0.6
mJ
t
d(off)
150
200
ns
t
fi
80
150
ns
E
off
24N60B
0.80
mJ
t
d(on)
25
ns
t
ri
15
ns
E
on
0.8
mJ
t
d(off)
250
ns
t
fi
100
ns
E
off
24N60B
1.4
mJ
R
thJC
0.83 K/W
R
thCK
0.25
K/W
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
e
P
1. Gate
2. Collector
3. Emitter
4. Collector
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.83
5.21
.190
.205
A1
2.29
2.54
.090
.100
A2
1.91
2.16
.075
.085
b
1.14
1.40
.045
.055
b1
1.91
2.13
.075
.084
C
0.61
0.80
.024
.031
D
20.80
21.34
.819
.840
E
15.75
16.13
.620
.635
e
5.45
BSC
.215
BSC
L
4.90
5.10
.193
.201
L1
2.70
2.90
.106
.114
L2
2.10
2.30
.083
.091
L3
0.00
0.10
.00
.004
L4
1.90
2.10
.075
.083
P
3.55
3.65
.140
.144
Q
5.59
6.20
.220
.244
R
4.32
4.83
.170
.190
S
6.15
BSC
.242
BSC
TO-247 SMD Outline
Min. Recommended Footprint (Dimensions in inches and (mm))
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
2002 IXYS All rights reserved
-50 -25
0
25
50
75 100 125 150
BV/
V
GE
(t
h
)
-
N
o
rm
a
l
i
z
e
d
0.7
0.8
0.9
1.0
1.1
1.2
T
J
- Degrees C
25
50
75
100
125
150
V
CE
(s
a
t
)
- N
o
rm
a
l
i
z
e
d
0.6
0.8
1.0
1.2
1.4
1.6
V
CE
- Volts
0
1
2
3
4
5
I
C
-
Am
per
es
0
10
20
30
40
50
3
4
5
6
7
8
9
10 11 12
I
C
-
A
m
per
es
0
20
40
60
80
100
V
CE
- Volts
0
2
4
6
8
10
I
C
-
Am
p
e
r
e
s
0
40
80
120
160
200
13V
11V
9V
7V
V
CE
= 10V
T
J
= 125C
V
GE
= 15V
T
J
= 25C
I
C
= 12A
I
C
= 24A
I
C
= 48A
T
J
=
125C
V
GE(th)
I
C
= 3mA
BV
CES
I
C
= 3mA
5V
5V
V
GE
= 15V
T
J
= 25C
V
CE
- Volts
0
1
2
3
4
5
I
C
-
Am
per
es
0
10
20
30
40
50
T
J
= 125C
7V
V
GE
= 15V
V
GE
= 13V
11V
9V
5V
7V
9V
V
GE
= 15V
13V
11V
Fig. 1. Saturation Voltage Characteristics
Fig. 2. Extended Output Characteristics
Fig. 4. Temperature Dependence of V
CE(sat)
Fig. 3. Saturation Voltage Characteristics
Fig. 5. Admittance Curves
Fig. 6. Temperature Dependence of BV
DSS
& V
GE(th)
IXGH24N60B
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXGH 24N60B
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
R
th
J
C
-
K/W
0.001
0.01
0.1
1
D=0.2
V
CE
- Volts
0
100
200
300
400
500
600
I
C
- A
m
per
es
0.1
1
10
100
Q
g
- nanocoulombs
0
20
40
60
80
100
V
GE
-
Vo
lts
0
3
6
9
12
15
R
G
- Ohms
0
10
20
30
40
50
E
(O
N
)
/ E
(OF
F
)
-
mil
liJo
u
l
e
s
0.0
0.5
1.0
1.5
2.0
2.5
T
J
= 125C
I
C
- Amperes
0
10
20
30
40
50
E
(
O
N)
/ E
(OF
F
)
-
m
i
l
liJo
u
l
e
s
0.0
0.5
1.0
1.5
2.0
2.5
V
CE
= 300V
I
C
= 24A
I
C
= 24A
E
(ON)
E
(OFF)
E
(ON)
E
(OFF)
T
J
= 125C
R
G
= 10
dV/dt < 5V/ns
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
R
G
= 10
T
J
= 125C
24
N
60
B
24
N
50
B
24N60B
24N60B
Fig. 11. Transient Thermal Resistance
Fig. 10. Turn-off Safe Operating Area
Fig. 9. Gate Charge
Fig. 7. Dependence of tfi and E
OFF
on I
C
.
Fig. 8. Dependence of tfi and E
OFF
on R
G
.
F ig . 1 0 . Turn-o ff S a fe O p e ra ting A re a
0.1
1
10
100
0
100
200
300
400
500
600
V
C E
- V olts
I
C
- A
m
peres
T
J
= 125
C
R
G
= 10
dV /dT < 5V /ns
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