2003 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
GE(th)
I
C
= 250
A, V
CE
= V
GE
3.0
5.0
V
I
CES
V
CE
= V
CES
T
J
= 25
C
50
A
V
GE
= 0 V
T
J
= 150
C
1
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= 50 A, V
GE
= 15 V
T
J
= 25
C
1.8
V
Note 1.
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150C
600
V
V
CGR
T
J
= 25
C to 150C; R
GE
= 1 M
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C (limited by leads)
75
A
I
C110
T
C
= 110
C
60
A
I
CM
T
C
= 25
C, 1 ms
300
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 10
I
CM
= 150
A
(RBSOA)
Clamped inductive load @
600 V
P
C
T
C
= 25
C
500
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque (M3)
1.13/10 Nm/lb.in.
Weight
TO-247 AD
6
g
TO-268 SMD
4
g
DS99113(11/03)
TO-268
(IXGT)
C (TAB)
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
G
C
E
TO-247 AD
(IXGH)
E
C (TAB)
Features
Medium frequency IGBT
Square RBSOA
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
V
CES
= 600 V
I
C25
= 75 A
V
CE(sat)
< 1.8 V
t
fi typ
= 100 ns
HiPerFAST
TM
IGBT
Optimized for 10-25 kHz hard
switching and up to 100 KHz
resonant switching
G
IXGH 60N60B2
IXGT 60N60B2
Advance Technical Data
IXGH 60N60B2
IXGT 60N60B2
Inductive load, T
J
= 25
C
I
C
= 50 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= 3.3
Note 1
Inductive load, T
J
= 125
C
I
C
= 50 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= 3.3
Note 1
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
e
P
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ. Max.
g
fs
I
C
= 50 A; V
CE
= 10 V,
40
58
S
Note 1
C
ies
3900
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
290
pF
C
res
100
pF
Q
g
170
nC
Q
ge
I
C
= 50 A, V
GE
= 15 V, V
CE
= 0.5 V
CES
25
nC
Q
gc
57
nC
t
d(on)
28
ns
t
ri
30
ns
t
d(off)
160 270
ns
t
fi
100 170
ns
E
off
1.0
2.5 mJ
t
d(on)
28
ns
t
ri
36
ns
E
on
0.6
mJ
t
d(off)
310
ns
t
fi
240
ns
E
off
2.8
mJ
R
thJC
0.25 K/W
R
thCK
0.15
K/W
Notes:
1. Pulse test, t < 300
s wide, duty cycle < 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
2003 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
50
100
150
200
250
300
350
0
1
2
3
4
5
6
7
8
V
C E
- Volts
I
C
-
A
m
per
es
V
GE
= 15V
13V
5V
7V
9V
11V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
10
20
30
40
50
60
70
80
90
100
0.5
1
1.5
2
2.5
3
V
CE
- Volts
I
C
-
A
m
per
es
V
GE
= 15V
13V
11V
5V
7V
9V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
10
20
30
40
50
60
70
80
90
100
0.5
1
1.5
2
2.5
3
V
C E
- Volts
I
C
-
A
m
per
e
s
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 4. Dependence of V
CE(sat)
on
Tem perature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
V
C E
(
s
a
t
)
-
N
o
r
m
al
i
z
ed
I
C
= 50A
I
C
= 25A
V
GE
= 15V
I
C
= 100A
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
3.7
5
6
7
8
9
10 11 12 13 14 15 16 17
V
G E
- Volts
V
C E
- V
o
l
t
s
T
J
= 25C
I
C
= 100A
50A
25A
Fig. 6. Input Adm ittance
0
50
100
150
200
250
300
4
5
6
7
8
9
10
V
G E
- Volts
I
C
-
A
m
per
es
T
J
= 125C
-40C
T
J
= 25C
IXGH 60N60B2
IXGT 60N60B2
IXGH 60N60B2
IXGT 60N60B2
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
90
100
0
50
100
150
200
250
300
I
C
- Amperes
g
f s
- S
i
e
m
e
n
s
T
J
= -40C
25C
125C
Fig. 8. Dependence of Turn-Off
Energy on R
G
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
35
40
45
50
R
G
- Ohms
E
o
ff
-
m
i
l
liJ
o
u
le
s
I
C
= 25A
T
J
= 125C
V
GE
= 15V
V
CE
= 400V
I
C
= 50A
I
C
= 100A
Fig. 9. Dependence of Turn-Off
Energy
on I
c
0
1
2
3
4
5
6
7
20
30
40
50
60
70
80
90
100
I
C
- Amperes
E
of
f
-
M
illiJ
o
u
le
s
R
G
= 3.3
V
GE
= 15V
V
CE
= 400V
T
J
= 125C
T
J
= 25C
Fig. 10. Dependence of Turn-Off
Energy on Tem perature
0
1
2
3
4
5
6
7
25
35
45
55
65
75
85
95
105 115 125
T
J
- Degrees Centigrade
E
of
f
-
m
i
lliJ
o
u
le
s
I
C
= 100A
R
G
= 3.3
V
GE
= 15V
V
CE
= 400V
I
C
= 50A
I
C
= 25A
Fig. 11. Dependence of Turn-Off
Sw itching Tim e on R
G
200
300
400
500
600
700
800
900
1000
1100
1200
0
5
10
15
20
25
30
35
40
45
50
R
G
- Ohms
S
w
it
c
h
in
g
T
i
m
e
-
n
a
n
o
s
e
c
o
n
d
I
C
= 50A
t
d(off)
t
fi
-
- - - - -
T
J
= 125C
V
GE
= 15V
V
CE
= 400V
I
C
= 25A
I
C
= 100A
Fig. 12. Dependence of Turn-Off
Sw itching Tim e
on I
c
50
100
150
200
250
300
350
400
20
30
40
50
60
70
80
90
100
I
C
- Amperes
S
w
i
t
ch
i
n
g
T
i
m
e
-
n
a
n
o
se
co
n
d
t
d(off)
t
fi
- - - - - -
R
G
= 3.3
V
GE
= 15V
V
CE
= 400V
T
J
= 125C
T
J
= 25C
2003 IXYS All rights reserved
Fig. 14. Gate Charge
0
3
6
9
12
15
0
20
40
60
80
100
120
140
160
180
Q
G
- nanoCoulombs
V
G E
-
V
o
l
t
s
V
CE
= 300V
I
C
= 50A
I
G
= 10mA
Fig. 15. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
C E
- Volts
Capac
i
t
anc
e -
p F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 13. Dependence of Turn-Off
Sw itching Tim e on Tem perature
50
100
150
200
250
300
350
25
35
45
55
65
75
85
95
105 115 125
T
J
- Degrees Centigrade
S
w
i
t
c
h
i
ng T
i
m
e
-
nano
s
e
c
o
n
d
I
C
= 25A
50A
100A
t
d(off)
t
fi
-
- - - - -
R
G
= 3.3
V
GE
= 15V
V
CE
= 400V
I
C
= 100A
50A
25A
Fig. 16. Maxim um Transient Therm al Resistance
0.05
0.075
0.1
0.125
0.15
0.175
0.2
0.225
0.25
0.275
1
10
100
1000
Pulse Width - milliseconds
R
(t
h
)
J
C
-
(
C
/
W
)
IXGH 60N60B2
IXGT 60N60B2
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