DS99044A(IXGK-IXGX60N60C2D1)
2004 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C, unless otherwise specified)
Min.
Typ. Max.
V
GE(th)
I
C
= 250 mA, V
CE
= V
GE
3.0
5.0
V
I
CES
V
CE
= V
CES
T
J
= 25C
650
mA
V
GE
= 0 V
T
J
= 125C
5
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= 50 A, V
GE
= 15 V
T
J
= 25C
2.1
2.5
V
Note 1
T
J
= 125C
1.8
V
HiPerFAST
TM
IGBT with Diode
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25C to 150C
600
V
V
CGR
T
J
= 25C to 150C; R
GE
= 1 MW
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25C (limited by leads) 100 A
I
C110
T
C
= 110C
60
A
I
CM
T
C
= 25C, 1 ms
300
A
SSOA
V
GE
= 15 V, T
VJ
= 125C, R
G
= 10 W
I
CM
= 100
A
(RBSOA)
Clamped inductive load @ V
CE
600 V
P
C
T
C
= 25C
480
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
V
ISOL
50/60 Hz
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque
1.15/13 Nm/lb.in.
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
Weight
30
g
DS990177(06/04)
V
CES
= 600 V
I
C25
= 75 A
V
CE(sat)
= 2.5 V
t
fi(typ)
= 35 ns
IXGN 60N60C2
IXGN60N60C2D1
C2-Class High Speed IGBTs
Advance Technical Data
E
E
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
G
E
E
C
Features
International standard package
miniBLOC
Aluminium nitride isolation
- high power dissipation
Isolation voltage 3000 V~
Very high current IGBT
Low V
CE(sat)
for minimum on-state
conduction losses
MOS Gate turn-on
- drive simplicity
Low collector-to-case capacitance
(< 50 pF)
Low package inductance (< 5 nH)
- easy to drive and to protect
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Easy to mount with 2 screws
Space savings
High power density
D1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
6,404,065B1 6,162,665
6,534,343
6,583,505
of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
6,259,123B1 6,306,728B1 6,683,344
IXGN 60N60C2
IXGN 60N60C2D1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C, unless otherwise specified)
Min. Typ. Max.
g
fs
I
C
= 50 A; V
CE
= 10 V,
40
58
S
Note 1
C
ies
3900
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
280
pF
C
res
97
pF
Q
g
146
nC
Q
ge
I
C
= 50 A, V
GE
= 15 V, V
CE
= 0.5 V
CES
28
nC
Q
gc
50
nC
t
d(on)
18
ns
t
ri
25
ns
t
d(off)
95 150
ns
t
fi
35
ns
E
off
0.48
0.8 mJ
t
d(on)
18
ns
t
ri
25
ns
E
on
0.9
mJ
t
d(off)
130
ns
t
fi
80
ns
E
off
1.2
mJ
R
thJC
0.26 K/W
R
thCK
0.05
K/W
Inductive load, T
J
= 25C
I
C
= 50 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= R
off
= 2.0
Inductive load, T
J
= 125C
I
C
= 50 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= R
off
= 2.0
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= 60 A, V
GE
= 0 V,
2.1
V
Note 1
T
J
= 150C
1.4
I
RM
I
F
= 60 A, V
GE
= 0 V, -di
F
/dt = 100 A/
T
J
= 100C
8.3
A
V
R
= 100 V
t
rr
I
F
= 1 A; -di/dt = 200 A/ms; V
R
= 30 V
35
ns
R
thJC
0.85 K/W
Note 1: Pulse test, t
300 ms, duty cycle 2 %
SOT-227B miniBLOC
2004 IXYS All rights reserved
IXGK 60N60C2
IXGX 60N60C2D1
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
25
50
75
100
125
150
175
200
1
1.5
2
2.5
3
3.5
4
4.5
V
CE
- Volts
I
C
- A
m
p
e
r
e
s
V
G E
= 1 5V
1 3V
1 1V
9V
5V
7V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
10
20
30
40
50
60
70
80
90
100
0.5
1
1.5
2
2.5
3
3.5
V
CE
- Volts
I
C
- A
m
p
e
re
s
V
G E
= 1 5V
1 3V
1 1V
5V
7V
9V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
10
20
30
40
50
60
70
80
90
100
0.5
1
1.5
2
2.5
3
3.5
V
CE
- Volts
I
C
- A
m
p
e
re
s
V
G E
= 1 5V
1 3V
1 1V
7V
5V
9V
Fig. 6. Input Admittance
0
25
50
75
100
125
150
175
200
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
V
GE
- Volts
I
C
-
A
m
p
e
re
s
T
J
= 1 25
C
25
C
-40
C
Fig. 4. Temperature Dependence of V
CE(sat)
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
25
50
75
100
125
150
T
J
- Degrees Centigrade
V
C E
(
s
a
t
)
-
N
o
r
m
a
liz
e
d
I
C
= 1 00A
I
C
= 50A
I
C
= 25A
V
G E
= 1 5V
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
1
1.5
2
2.5
3
3.5
4
4.5
5
5
6
7
8
9
10
11
12
13
14
15
V
GE
- Volts
V
CE
- V
o
l
t
s
T
J
= 25
C
I
C
= 1 00A
50A
25A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
6,404,065B1 6,162,665
6,534,343
6,583,505
of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
6,259,123B1 6,306,728B1 6,683,344
IXGN 60N60C2
IXGN 60N60C2D1
Fig. 12. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
CE
- Volts
C
ap
ac
i
t
a
nc
e -
pF
Cies
Coes
Cres
f = 1 M Hz
Fig. 11. Gate Charge
0
3
6
9
12
15
0
20
40
60
80
100
120
140
160
Q
G
- nanoCoulombs
V
G E
- V
o
l
t
s
V
C E
= 300V
I
C
= 50A
I
G
= 1 0mA
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
175
200
I
C
- Amperes
g
f s
- S
i
e
m
e
n
s
T
J
= -40
C
25
C
1 25
C
Fig. 8. Dependence of E
off
on R
G
0
1
2
3
4
5
6
2
4
6
8
10
12
14
16
R
G
- Ohms
E
off
-
m
illi
J
o
ule
s
I
C
= 75A
I
C
= 25A
T
J
= 1 25
C
V
GE
= 1 5V
V
CE
= 400V
I
C
= 50A
I
C
= 1 00A
Fig. 9. Dependence of E
off
on I
C
0
1
2
3
4
5
20
30
40
50
60
70
80
90
100
I
C
- Amperes
E
of
f
-
M
i
l
liJ
ou
les
R
G
= 2 Ohms
R
G
= 1 0 Ohms - - - - -
T
J
= 1 25
C
V
G E
= 1 5V
V
C E
= 400V
T
J
= 25
C
Fig. 10. Dependence of E
off
on Temperature
0
1
2
3
4
5
25
50
75
100
125
T
J
- Degrees Centigrade
E
off
-
m
illiJ
o
u
le
s
I
C
= 1 00A
I
C
= 50A
I
C
= 25A
V
G E
= 1 5V
V
C E
= 400V
R
G
= 2 Ohms
R
G
= 1 0 Ohms - - - - -
I
C
= 75A
2004 IXYS All rights reserved
200
600
1000
0
400
800
80
90
100
110
120
130
140
0.00001
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800 1000
0
5
10
15
20
0.0
0.4
0.8
1.2
1.6
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
20
40
60
80
100
1000
0
1000
2000
3000
4000
0
1
2
0
20
40
60
80
100
120
140
160
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
nC
A/
s
A/
s
t
rr
ns
t
fr
A/
s
s
DSEP 2x61-06A
Z
thJC
I
F
=120A
I
F
= 60A
I
F
= 30A
T
VJ
= 100C
V
R
= 300V
T
VJ
= 100C
I
F
= 60A
Fig. 14 Peak reverse current I
RM
versus -di
F
/dt
Fig. 13 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 12 Forward current I
F
versus V
F
T
VJ
= 100C
V
R
= 300V
T
VJ
= 100C
V
R
= 300V
I
F
=120A
I
F
= 60A
I
F
= 30A
Q
r
I
RM
Fig. 15 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 16 Recovery time t
rr
versus -di
F
/dt
Fig. 17 Peak forward voltage V
FR
and
t
fr
versus di
F
/dt
I
F
=120A
I
F
= 60A
I
F
= 30A
t
fr
V
FR
Fig. 18 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.3073
0.0055
2
0.3533
0.0092
3
0.0887
0.0007
4
0.1008
0.0399
T
VJ
= 25C
T
VJ
=150C
T
VJ
=100C
IXGN 60N60C2
IXGN 60N60C2D1
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