2000 IXYS All rights reserved
HiPerFAST
TM
IGBT
ISOPLUS247
TM
(Electrically Isolated Back Surface)
Preliminary data sheet
ISOPLUS 247
G = Gate,
C = Collector
E = Emitter
* Patent pending
E153432
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25C to 150C
600
V
V
CGR
T
J
= 25C to 150C; R
GE
= 1 MW
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25C
156
A
I
C110
T
C
= 110C
102
A
I
L(RMS)
External lead limit
76
A
I
CM
T
C
= 25C, 1 ms
300
A
SSOA
V
GE
= 15 V, T
VJ
= 125C, R
G
= 2.4 W
I
CM
= 200
A
(RBSOA)
Clamped inductive load
@ 0.8 V
CES
P
C
T
C
= 25C
520
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
V
ISOL
50/60 Hz, RMS, t = 1minute leads-to-tab 2500
V
Weight
5
g
G
C
E
Isolated Backside*
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C, unless otherwise specified)
min.
typ. max.
BV
CES
I
C
= 1 mA, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 1 mA, V
CE
= V
GE
2.5
5.5
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25C
200
mA
V
GE
= 0 V
T
J
= 150C
2 mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
400
nA
V
CE(sat)
I
C
=
100A, V
GE
= 15 V (see note 1)
2.1
V
Features
l
DCB Isolated mounting tab
l
Meets TO-247AD package Outline
l
High current handling capability
l
Latest generation HDMOS
TM
process
l
MOS Gate turn-on
- drive simplicity
Applications
l
Uninterruptible power supplies (UPS)
l
Switched-mode and resonant-mode
power supplies
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
Advantages
l
Easy assembly
l
High power density
l
Very fast switching speeds for high
frequency applications
98744 (08/00)
IXGR 120N60B
V
CES
= 600 V
I
C25
= 156 A
V
CE(sat)
= 2.1 V
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGR 120N60B
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= 60A; V
CE
= 10 V,
50
75
S
Pulse test, t
300
m
s, duty cycle
2 %
C
ies
11000
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
680
pF
C
res
190
pF
Q
g
350
nC
Q
ge
I
C
= 100A, V
GE
= 15 V, V
CE
= 0.5 V
CES
72
nC
Q
gc
131
nC
t
d(on)
60
ns
t
ri
45
ns
E
on
2.4
mJ
t
d(off)
200
360
ns
t
fi
160
280
ns
E
off
5.5
9.6
mJ
t
d(on)
60
ns
t
ri
60
ns
E
on
4.8
mJ
t
d(off)
290
ns
t
fi
250
ns
E
off
8.7
mJ
R
thJC
0.3 K/W
R
thCK
0.15
K/W
Inductive load, T
J
= 25
C
I
C
= 100A, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.4
W
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125
C
I
C
= 100A, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.4
W
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
ISOPLUS 247 OUTLINE
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190 .205
A
1
2.29
2.54
.090 .100
A
2
1.91
2.16
.075 .085
b
1.14
1.40
.045 .055
b
1
1.91
2.13
.075 .084
b
2
2.92
3.12
.115 .123
C
0.61
0.80
.024 .031
D
20.80 21.34
.819 .840
E
15.75 16.13
.620 .635
e 5.45 BSC
.215 BSC
L
19.81 20.32
.780 .800
L1
3.81
4.32
.150 .170
Q
5.59
6.20
.220 .244
R
4.32
4.83
.170 .190
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
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