www.docs.chipfind.ru
1 - 5
2000 IXYS All rights reserved
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
98631B (7/00)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
m
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 250
m
A, V
CE
= V
GE
2.5
5.0
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
200
m
A
V
GE
= 0 V
T
J
= 125
C
3
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
T,
V
GE
= 15 V
2.1
2.5
V
Note 1
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
W
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
45
A
I
C90
T
C
= 90
C
28
A
I
CM
T
C
= 25
C, 1 ms
120
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 10
W
I
CM
= 64
A
(RBSOA)
Clamped inductive load, L = 100
m
H
@ 0.8 V
CES
P
C
T
C
= 25
C
140
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum Lead and Tab temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
V
ISOL
50/60 Hz, RMS
t = 1 min leads-to housing
2500
V~
Weight
5
g
HiPerFAST
TM
IGBT
with Diode
ISOPLUS247
TM
(Electrically Isolated Backside)
Features
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
IXGR 32N60CD1
* Patent pending
ISOPLUS 247
TM
(IXGR)
Isolated backside*
E 153432
E
V
CES
= 600 V
I
C25
= 45 A
V
CE(SAT)typ
= 2.1 V
t
fi(typ)
= 55 ns
G
C
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 5
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
T
; V
CE
= 10 V,
25
S
Pulse test, t
300
m
s, duty cycle
2 %
C
ies
2700
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
240
pF
C
res
50
pF
Q
g
110
nC
Q
ge
I
C
= I
T
, V
GE
= 15 V, V
CE
= 0.5 V
CES
22
nC
Q
gc
40
nC
t
d(on)
25
ns
t
ri
20
ns
t
d(off)
85
ns
t
fi
55
ns
E
off
0.32
mJ
t
d(on)
25
ns
t
ri
25
ns
E
on
1
mJ
t
d(off)
110
170
ns
t
fi
100
160
ns
E
off
0.85
1.25
mJ
R
thJC
0.90 K/W
R
thCK
0.15
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= I
T
, V
GE
= 0 V, Pulse test T
J
= 150
C
1.6
V
t
300
m
s, duty cycle d
2 % T
J
= 25
C
2.5
V
I
RM
I
F
= I
T
, V
GE
= 0 V, -di
F
/dt = 100 A/
m
s
6
A
t
rr
V
R
= 100 V
T
J
= 100
C
100
ns
I
F
= 1 A; -di/dt = 100 A/
m
s; V
R
= 30 V T
J
= 25
C
25
ns
R
thJC
1.15 K/W
Inductive load, T
J
= 25
C
I
C
= I
T
, V
GE
= 15 V, L = 100
m
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
W
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125
C
I
C
= I
T
, V
GE
= 15 V, L = 100
m
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
W
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
IXGR 32N60CD1
Note: 1. I
T
= 32A
ISOPLUS 247 (IXGR) OUTLINE
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190 .205
A
1
2.29
2.54
.090 .100
A
2
1.91
2.16
.075 .085
b
1.14
1.40
.045 .055
b
1
1.91
2.13
.075 .084
b
2
2.92
3.12
.115 .123
C
0.61
0.80
.024 .031
D
20.80
21.34
.819 .840
E
15.75
16.13
.620 .635
e 5.45 BSC
.215 BSC
L
19.81
20.32
.780 .800
L1
3.81
4.32
.150 .170
Q
5.59
6.20
.220 .244
R
4.32
4.83
.170 .190
S
13.21
13.72
.520 .540
T
15.75
16.26
.620 .640
U
1.65
3.03
.065 .080
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 5
2000 IXYS All rights reserved
V
CE
- Volts
0
1
2
3
4
5
I
C
- Am
p
e
re
s
0
20
40
60
80
100
V
CE
- Volts
0
1
2
3
4
5
I
C
- Am
p
e
re
s
0
20
40
60
80
100
V
CE
-Volts
0
5
10
15
20
25
30
35
40
C
a
pa
cit
a
nc
e - p
F
10
100
1000
10000
T
J
- Degrees C
25
50
75
100
125
150
V
CE
(
s
a
t
)
- N
o
r
m
ali
z
ed
0.50
0.75
1.00
1.25
1.50
V
GE
- Volts
3
4
5
6
7
8
9
10
I
C
- Am
p
e
re
s
0
20
40
60
80
100
V
CE
- Volts
0
2
4
6
8
10
I
C
- Am
p
e
re
s
0
40
80
120
160
200
13V
11V
9V
7V
V
CE
= 10V
V
GE
= 15V
13V
T
J
= 25C
V
GE
= 15V
T
J
= 25C
I
C
= 16A
I
C
= 32A
I
C
= 64A
T
J
=
125C
f = 1Mhz
5V
5V
V
GE
= 15V
T
J
= 25C
T
J
= 125C
7V
9V
5V
7V
9V
V
GE
= 15V
13V
C
iss
C
oss
C
rss
11V
11V
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
Fig. 3. High Temperature Output Characteristics
Fig. 4. Temperature Dependence of V
CE(sat)
Fig. 5. Admittance Curves
Fig. 6. Capacitance Curves
IXGR 32N60CD1
4 - 5
2000 IXYS All rights reserved
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
Z
th
J
C
(K/
W
)
0.001
0.01
0.1
1
D=0.2
V
CE
- Volts
0
100
200
300
400
500
600
I
C
- A
m
p
e
r
e
s
0.1
1
10
100
Q
g
- nanocoulombs
0
25
50
75
100
125
V
GE
- Vo
lts
0
4
8
12
16
R
G
- Ohms
0
10
20
30
40
50
60
E
(O
F
F
)
-
m
i
l
lij
ou
les
0
2
4
6
8
E
(O
N)
-
m
i
lli
jo
ul
es
0
1
2
3
4
I
C
- Amperes
0
20
40
60
80
E
(O
F
F
)
-
mi
lli
Jo
ul
es
0
1
2
3
4
E
(O
N)
-
m
i
l
lij
ou
les
0.00
0.25
0.50
0.75
1.00
V
CE
= 300V
I
C
= 16A
I
C
= 32A
E
(ON)
E
(OFF)
E
(OFF)
T
J
= 125C
R
G
= 4.7
dV/dt < 5V/ns
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
R
G
= 10
T
J
= 125C
64
E
(ON)
I
C
= 64A
E
(OFF)
T
J
= 125C
E
(ON)
I
C
= 32A
E
(ON)
E
(OFF)
Fig. 7. Dependence of E
ON
and E
OFF
on I
C
.
Fig. 8. Dependence of E
ON
and E
OFF
on R
G
.
Fig. 9. Gate Charge
Fig. 10. Turn-off Safe Operating Area
Fig. 11. Transient Thermal Resistance
IXGR 32N60CD1
5 - 5
2000 IXYS All rights reserved
IXGR 32N60CD1
200
600
1000
0
400
800
60
70
80
90
0.00001
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
5
10
15
20
0.00
0.25
0.50
0.75
1.00
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
5
10
15
20
25
30
100
1000
0
200
400
600
800
1000
0
1
2
3
0
10
20
30
40
50
60
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
m
s
A
V
nC
A/
m
s
A/
m
s
t
rr
ns
t
fr
Z
thJC
A/
m
s
s
DSEP 2x31-06B
I
F
= 60A
I
F
= 30A
I
F
= 15A
T
VJ
= 100C
V
R
= 300V
T
VJ
= 100C
I
F
= 30A
Fig. 14.Peak reverse current I
RM
versus -di
F
/dt
Fig. 13. Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 12.
Forward current I
F
versus V
F
T
VJ
= 100C
V
R
= 300V
T
VJ
= 100C
V
R
= 300V
I
F
= 60A
I
F
= 30A
I
F
= 15A
Q
r
I
RM
Fig. 15. Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 16.Recovery time t
rr
versus -di
F
/dt
Fig. 17.Peak forward voltage V
FR
and t
fr
versus di
F
/dt
I
F
= 60A
I
F
= 30A
I
F
= 15A
t
fr
V
FR
Fig. 18. Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.436
0.0055
2
0.482
0.0092
3
0.117
0.0007
4
0.115
0.0418
T
VJ
=25C
T
VJ
=100C
T
VJ
=150C
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