2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
600
V
V
GS
Continuous
20
V
I
D25
T
C
= 25
C; Note 1
14
A
I
D90
T
C
= 90
C, Note 1
10
A
I
D(RMS)
Package lead current limit
45
A
E
AS
I
o
= 10A, T
C
= 25
C
690
mJ
E
AR
I
o
= 20A
1
mJ
P
D
T
C
= 25
C
125
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +125
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
V
ISOL
RMS leads-to-tab, 50/60 Hz, t = 1 minute
2500
V~
F
C
Mounting force
11 ... 65 / 2.4 ...11 N/lb
Weight
3
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ. max.
R
DS(on)
V
GS
= 10 V, I
D
= I
D90
, Note 3
160
190 m
V
GS
= 10 V, I
D
= I
D90
, Note 3 T
J
= 125
C
463
m
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
3.5
5.5
V
I
DSS
V
DS
= V
DSS
T
J
= 25
C
1
A
V
GS
= 0 V
T
J
= 125
C
10
A
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
G = Gate,
D = Drain,
S = Source
* Patent pending
V
DSS
= 600 V
I
D25
= 14 A
R
DS(on)
= 190 m
DS98848C(1/04)
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
3
RD
generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
Low thermal resistance due to reduced
chip thickness
Low drain to tab capacitance(<30pF)
Applications
Switched Mode Power Supplies (SMPS)
Uninterruptible Power Supplies (UPS)
Power Factor Correction (PFC)
Welding
Inductive Heating
Advantages
Easy assembly: no screws or isolation
foils required
Space savings
High power density
CoolMOS
TM
Power MOSFET
in ISOPLUS220
TM
Package
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Low R
DS(on)
, Superjunction MOSFET
IXKC 20N60C
CooLMOS is a trademark of Infineon
Technologies, AG
G
D
S
ISOPLUS 220LV
TM
Isolated back surface*
E153432
Preliminary Data Sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ. max.
Q
g(on)
79
nC
Q
gs
V
GS
= 10 V, V
DS
= 350 V, I
D
= 20 A
21
nC
Q
gd
46
nC
t
d(on)
20
ns
t
r
V
GS
= 10 V, V
DS
= 380V
55
ns
t
d(off)
I
D
= 20 A, R
G
= 3.3
60
ns
t
f
10
ns
R
thJC
1
K/W
R
thCH
0.30
K/W
Reverse Conduction
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ. max.
V
SD
I
F
= 10 A, V
GS
= 0 V
0.8
1.2
V
Note 3
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t
300 s, duty cycle d 2 %
IXKC 20N60C
TO-220LV Outline
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