2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
800
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
20
A
I
D90
T
C
= 90
C
14
A
I
D(RMS)
Package lead current limit
45
A
E
AS
I
o
= 10A, T
C
= 25
C
690
mJ
E
AR
I
o
= 20A
0.5
mJ
dv/dt
V
DS
< V
DSS
, I
F
17 A, T
VJ
= 150
C
6
V/ns
d
IR
/dt = 100 A/
s
P
D
T
C
= 25
C
140
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +125
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
V
ISOL
RMS leads-to-tab, 50/60 Hz, t = 1 minute
2500
V~
F
C
Mounting force
11 ... 65 / 2.4 ...11 N/lb
Weight
3
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ. max.
R
DS(on)
V
GS
= 10 V, I
D
= I
D90
, Note 1
136
150 m
V
GS
= 10 V, I
D
= I
D90
, Note 1 T
J
= 125
C
280
m
V
GS(th)
V
DS
= V
GS
, I
D
= 2 mA
2
4
V
I
DSS
V
DS
= V
DSS
T
J
= 25
C
50
A
V
GS
= 0 V
T
J
= 125
C
10
A
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
200
nA
G = Gate,
D = Drain,
S = Source
V
DSS
= 800 V
I
D25
= 20 A
R
DS(on)
= 150 m
DS98866C(02/04)
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
3
RD
generation CoolMos power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
Low thermal resistance due to reduced
chip thickness
Low drain to tab capacitance(<30pF)
Applications
Switched Mode Power Supplies (SMPS)
Uninterruptible Power Supplies (UPS)
Power Factor Correction (PFC)
Welding
Inductive Heating
Advantages
Easy assembly: no screws or isolation
foils required
Space savings
High power density
Power MOSFET
ISOPLUS220
TM
Electrically Isolated Back Surface
Low R
DS(on)
, High Voltage, CoolMOS
TM
Superjunction MOSFET
Preliminary Data Sheet
IXKC 25N80C
CoolMos is a trademark of Infineon
Technology.
ISOPLUS220
TM
G
D
S
E153432
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796
5,063,307
5,237,481 5,381,025
6,404,065B1 6,162,665
6,534,343
6,583,505
of the following U.S. patents:
4,835,592 4,881,106 5,017,508
5,049,961
5,187,117 5,486,715
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ. max.
g
fs
V
DS
= 15 V; I
D
= 0.5 I
D90
, pulse test
14
20
S
C
iss
4600
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2500
pF
C
rss
120
pF
Q
g(on)
180
nC
Q
gs
V
GS
= 10 V, V
DS
= 640 V, I
D
= I
D90
20
nC
Q
gd
80
nC
t
d(on)
25
ns
t
r
V
GS
= 10 V, V
DS
= 640V
25
ns
t
d(off)
I
D
= 35 A, R
G
= 2.2
75
ns
t
f
10
ns
R
thJC
0.9
K/W
R
thCH
0.30
K/W
Reverse Conduction
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ. max.
V
SD
I
F
= 12.5 A, V
GS
= 0 V
1
1.2
V
Note 1
Note: 1. Pulse test, t
300 s, duty cycle d 2 %
IXKC 25N80C
ISOPLUS220 Outline
2004 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
C
0
10
20
30
40
50
60
70
80
0
3
6
9
12
15
18
21
24
27
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
8V
7V
5V
6V
t
p = 300s
Fig. 3. Output Characteristics
@ 125
C
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
9
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
8V
7V
4V
4.5V
t
p = 300s
5V
Fig. 1. Output Characteristics
@ 25
C
0
5
10
15
20
25
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
7V
6V
4V
4.5V
t
p = 300s
5V
Fig. 4. R
DS(on)
Norm alized to 0.5 I
D90
Value vs. Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o n
)
- N
o
rm
a
l
i
z
e
d
I
D
= 28A
I
D
= 14A
V
GS
= 10V
t
p = 300s
Fig. 6. Drain Current vs. Case
Tem perature
0
2
4
6
8
10
12
14
16
18
20
22
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D90
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
3.7
4
0
10
20
30
40
50
60
70
80
I
D
- Amperes
R
D
S
(
o
n )
-
N
o
r
m
a
liz
e
d
T
J
= 125
C
T
J
= 25
C
V
GS
= 10V
t
p = 300s
IXKC 25N80C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796
5,063,307
5,237,481 5,381,025
6,404,065B1 6,162,665
6,534,343
6,583,505
of the following U.S. patents:
4,835,592 4,881,106 5,017,508
5,049,961
5,187,117 5,486,715
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Fig. 11. Capacitance
10
100
1000
10000
100000
0
10
20
30
40
50
60
70
80
90
100
V
D S
- Volts
C
a
pac
i
t
a
n
c
e
-
pF
C
iss
C
oss
C
rss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
140
160
180
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 640V
I
D
= 14A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
5
10
15
20
25
30
35
40
45
50
3
3.5
4
4.5
5
5.5
6
V
G S
- Volts
I
D
-
A
m
per
es
T
J
= 125
C
25
C
-40
C
Fig. 8. Transconductance
0
4
8
12
16
20
24
28
32
36
0
5
10
15
20
25
30
35
40
45
50
I
D
- Amperes
g
f s
-
S
i
e
m
ens
T
J
= -40
C
25
C
125
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
5
10
15
20
25
30
35
40
45
50
0.5
0.6
0.7
0.8
0.9
1
V
S D
- Volts
I
S
- A
m
p
e
re
s
T
J
= 125
C
T
J
= 25
C
Fig. 12. Maxim um Transient Therm al
Resistance
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
10
100
1000
Pulse Width - milliseconds
R
( t
h
) J
C
-
C /
W
IXKC 25N80C
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