2002 IXYS All rights reserved
1 - 2
212
CoolMOS
Power MOSFET
with Series Schottky Diode and
Ultra Fast Antiparallel Diode
in High Voltage ISOPLUS i4-PAC
TM
IXKF 40N60SCD1
Features
fast CoolMOS power MOSFET - 2nd
generation
- High blocking voltage
- Low on resistance
- Low thermal resistance due to reduced
chip thickness
Series Schottky diode prevents current
flow through MOSFET's body diode
- very low forward voltage
- fast switching
Ultra fast HiPerFRED
TM
anti parallel diode
- low operating forward voltage
- fast and soft reverse recovery - low switching
losses
ISOPLUS i4-PAC
TM
high voltage package
- isolated back surface
- low coupling capacity between pins and
heatsink
- enlarged creepage towards heatsink
- enlarged creepage between high voltage
pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
Converters with
circuit operation leading to current flow
through switches in reverse direction - e. g.
- phaseleg with inductive load
- resonant circuits
high switching frequency
Examples
switched mode power supplies (SMPS)
uninterruptable power supplies (UPS)
DC-DC converters
welding converters
converters for inductive heating
drive converters
CoolMOS is a trademark of
Infineon Technologies AG.
Advanced Technical Information
IXYS reserves the right to change limits, test conditions and dimensions.
I
D25
= 38 A
V
DSS
= 600 V
R
DSon
= 60 m
t
rr
= 70 ns
MOSFET T
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ
= 25C to 150C
600
V
V
GS
20
V
I
D25
T
C
= 25C
38
A
I
D90
T
C
= 90C
25
A
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
R
DSon
V
GS
= 10 V;
I
D
= I
D90
60
70 m
V
GSth
V
DS
= 20 V;
I
D
= 3 mA;
3.5
5.5
V
I
DSS
V
DS
= V
DSS
;
V
GS
= 0 V; T
VJ
= 25C
0.3 mA
T
VJ
= 125C
0.5
mA
I
GSS
V
GS
= 20 V; V
DS
= 0 V
100
nA
Q
g
220
nC
Q
gs
55
nC
Q
gd
125
nC
t
d(on)
30
ns
t
r
95
ns
t
d(off)
100
ns
t
f
10
ns
R
thJC
0.45 K/W
R
thJH
with heat
transfer paste
0.9
K/W
V
GS
= 10 V; V
DS
= 350 V; I
D
= 50 A
V
GS
= 10 V; V
DS
= 380 V;
I
D
= 25 A; R
G
= 1.8
2002 IXYS All rights reserved
2 - 2
212
Dimensions in mm (1 mm = 0.0394")
Component
Symbol
Conditions
Maximum Ratings
V
ISOL
I
ISOL
1 mA; 50/60 Hz
2500
V~
T
VJ
-40...+150
C
T
stg
-40...+125
C
F
C
mounting force with clip
20 ... 120
N
Symbol
Conditions
Characteristic Values
min.
typ.
max.
C
p
coupling capacity between shorted pins
and mounting tab in the case
40
pF
d
S
, d
A
D pin - S pin
7
mm
d
S
, d
A
pin - backside metal
5.5
mm
Weight
9
g
Series Schottky Diode D
S
Symbol
Conditions
Maximum Ratings
I
F25
T
C
= 25C
60
A
I
F90
T
C
= 90C
40
A
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
V
F
I
F
= 20 A;
T
VJ
= 25C
0.9
V
T
VJ
= 125C
0.7
V
R
thJC
2 K/W
R
thJH
with heat transfer paste
2.9
K/W
Anti Parallel Diode D
F
Symbol
Conditions
Maximum Ratings
I
F25
T
C
= 25C
32
A
I
F90
T
C
= 90C
16
A
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
V
F
I
F
= 20 A;
T
VJ
= 25C
2.1
2.5
V
T
VJ
= 125C
1.4
V
I
RM
I
F
= 30 A;
di
F
/dt = -500 A/s; T
VJ
= 125C
15
A
t
rr
V
R
= 600 V; V
GE
= 0 V
70
ns
R
thJC
1.3 K/W
R
thJH
with heat transfer paste
2.6
K/W
IXKF 40N60SCD1
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