2003 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
600
V
V
GS
Continuous
20
V
I
D25
T
C
= 25
C
47
A
I
D100
T
C
= 100
C
30
A
E
AS
I
o
= 10A, T
C
= 25
C
1800
mJ
P
D
T
C
= 25
C
415
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +125
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
Weight
6
g
M
D
Mounting torque
1.13/10 Nm/lb-in
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ. max.
R
DS(on)
V
GS
= 10 V, I
D
= I
D100
, Note 1
60
70 m
V
GS
= 10 V, I
D
= I
D100
, Note 1, T
J
= 125
C
150
m
V
GS(th)
V
DS
= V
GS
, I
D
= 2 mA
2
3
4
V
I
DSS
V
DS
= V
DSS
T
J
= 25
C
25
A
V
GS
= 0 V
T
J
= 150
C
250
A
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
G = Gate
D = Drain
S = Source
TAB = Drain
V
DSS
= 600 V
I
D25
= 47 A
R
DS(on)
= 70 m
DS99064B(10/03)
ADVANCE TECHNICAL INFORMATION
Features
3
RD
generation Superjunction power
MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
Low thermal resistance due to reduced
chip thickness
Applications
Switched Mode Power Supplies (SMPS)
Uninterruptible Power Supplies (UPS)
Power Factor Correction (PFC)
Welding
Inductive Heating
Power MOSFET
Low R
DS(on)
, High Voltage,
CoolMOS
TM
Superjunction MOSFET
IXKH 47N60C
G
D
S
TO-247
(TAB)
CoolMos is a trademark of Infineon
Technology.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ. max.
g
FS
V
DS
= 10 V, I
D
= I
D100
40
S
Q
g(on)
252 320
nC
Q
gs
V
GS
= 10 V, V
DS
= 350 V, I
D
= 40 A
24
nC
Q
gd
121
nC
t
d(on)
20
ns
t
r
V
GS
= 10 V, V
DS
= 380V
27
ns
t
d(off)
I
D
= 47 A, R
G
= 4.7
111
ns
t
f
10
ns
R
thJC
0.3
K/W
R
thCH
0.25
K/W
Reverse Correction
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ. max.
V
SD
I
F
= I
D100
, V
GS
= 0 V
1.0
1.2
V
Note 1
Note: 1. Pulse test, t
300 s, duty cycle d 2 %
IXKH 47N60C
TO-247 Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80 21.46
.819
.845
E
15.75 16.26
.610
.640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
2003 IXYS All rights reserved
IXKH 47N60C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
20
40
60
80
100
120
140
160
180
0
2
4
6
8
10
12
14
16
18
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
7V
5V
6V
t
p = 300s
Fig. 3. Output Characteristics
@ 125 Deg. C
0
5
10
15
20
25
30
35
40
45
50
0
1
2
3
4
5
6
7
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
5V
4V
4.5V
t
p = 300s
Fig. 1. Output Characteristics
@ 25 Deg. C
0
5
10
15
20
25
30
35
40
45
50
0
0.5
1
1.5
2
2.5
3
3.5
V
D S
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 10V
6V
5V
4V
4.5V
t
p = 300s
Fig. 4. R
DS(on)
Norm alized to I
D100
Value
vs. Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D S
(o
n
)
-
N
o
rm
a
l
i
z
e
d
I
D
= 30A
I
D
= 15A
V
GS
= 10V
t
p = 300s
Fig. 6. Drain Current vs. Case
Tem perature
0
5
10
15
20
25
30
35
40
45
50
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
Fig. 5. R
DS(on)
Norm alized to
I
D100
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
3.7
4
0
20
40
60
80
100
120
140 160 180
I
D
- Amperes
R
D
S
(
on)
-
N
o
rm
a
l
i
z
e
d
T
J
= 125C
T
J
= 25C
V
GS
= 10V
t
p = 300s
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
IXKH 47N60C
Fig. 11. Capacitance
10
100
1000
10000
100000
0
10
20
30
40
50
60
70
80
90
100
V
DS
- Volts
C
apac
i
t
anc
e -
pF
C
iss
C
oss
C
rss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
30
60
90
120
150
180
210
240
270
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 350V
I
D
= 40A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
20
40
60
80
100
120
2
2.5
3
3.5
4
4.5
5
5.5
6
V
G S
- Volts
I
D
-
A
m
p
e
re
s
T
J
= 125C
25C
-40C
Fig. 12. Maxim um Transient Therm al
Resistance
0.01
0.1
1
1
10
100
1000
Pulse Width - milliseconds
R
(t
h
)
J
C
-
(
C
/
W
)
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
0
20
40
60
80
100
120
I
D
- Amperes
g
f s
-
S
i
e
m
e
n
s
T
J
= -40C
25C
125C
Fig. 9. Source Current vs. Source-To-
Drain Voltage
0
10
20
30
40
50
60
70
80
90
100
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 125C
T
J
= 25C
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