1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
1200
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
W
1200
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
30
A
I
C90
T
C
= 90
C
15
A
I
CM
T
C
= 25
C, 1 ms
60
A
SSOA
V
GE
= 15 V, T
J
= 125
C, R
G
= 10
W
I
CM
= 40
A
(RBSOA)
Clamped inductive load
@ 0.8 V
CES
t
SC
T
J
= 125
C, V
GE
= 720 V; V
GE
= 15 V, R
G
= 10
W
10
m
s
Non repetitive
P
C
T
C
= 25
C
150
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering (TO-268)
260
C
Weight
TO-247
6
g
TO-268
4
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 1.0 mA, V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 250
m
A, V
CE
= V
GE
3
6
V
I
CES
V
CE
= 0.8 V
CES
50
m
A
Note 1
T
J
= 125
C
2.5
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90,
V
GE
= 15 V
3.0
3.4
V
Note 2
T
J
= 125
C
2.8
V
Features
High Blocking Voltage
Epitaxial Silicon drift region
- fast switching
- small tail current
- low switching losses
MOS gate turn-on for drive simplicity
Molding epoxies meet UL 94 V-0
flammability classification
Applications
AC motor speed control
DC servo and robot drives
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
DC choppers
98652A (7/00)
TO-247 AD (IXSH)
(TAB)
TO-268 (IXST)
(TAB)
G
E
I
C25
= 30 A
V
CES
= 1200 V
V
CE(sat)
= 3.4 V
G
C
E
HIGH Voltage IGBT
"S" Series - Improved SCSOA Capability
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
IXSH 15N120B
IXST 15N120B
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
7
9.5
S
Note 2
C
ies
1400
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
98
pF
C
res
37
pF
Q
g
57
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
14
nC
Q
gc
25
nC
t
d(on)
30
ns
t
ri
25
ns
t
d(off)
148
300
ns
t
fi
126
250
ns
E
off
1.5
2.9
mJ
t
d(on)
30
ns
t
ri
25
ns
E
on
1.1
mJ
t
d(off)
265
ns
t
fi
298
ns
E
off
3.1
mJ
R
thJC
0.83 K/W
R
thCK
(TO-247)
0.25
K/W
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V
R
G
= 10
W,
V
CE
= 0.8 V
CES
Note 3
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V
R
G
= 10
W
V
CE
= 0.8 V
CES
Note 3
Notes: 1.
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2.
Pulse test, t
300
m
s, duty cycle
2 %
3.
Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
.
IXSH 15N120B
IXST 15N120B
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
TO-268AA (D
3
PAK)
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e 5.45 BSC .215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3 0.25 BSC .010 BSC
L4
3.80
4.10
.150
.161
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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