DS99249(10/04)
Features
International standard package
Guaranteed Short Circuit SOA
capability
Low V
CE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Fast fall time for switching speeds
up to 20 kHz
Applications
AC motor speed control
Uninterruptible power supplies (UPS)
Welding
Advantages
High power density
IXSH 30N60B2D1
IXST 30N60B2D1
High Speed IGBT
with Diode
Short Circuit SOA Capability
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150C
600
V
V
CGR
T
J
= 25
C to 150C; R
GE
= 1 M
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
48
A
I
C110
T
C
= 110
C
30
A
I
F(110)
28
A
I
CM
T
C
= 25
C, 1 ms
90
A
SSOA
V
GE
= 15 V, T
J
= 125
C, R
G
= 10
I
CM
= 48
A
(RBSOA)
Clamped inductive load
@ 0.8 V
CES
t
SC
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125
C
10
s
(SCSOA)
R
G
= 10
, non repetitive
P
C
T
C
= 25
C
250
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Weight
TO-247
6
g
TO-268
5
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s
260
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
GE(th)
I
C
= 750
A, V
CE
= V
GE
4.0
7.0
V
I
CES
V
CE
= V
CES
150
A
V
GE
= 0 V
1
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= 24A, V
GE
= 15 V
2.5
V
Preliminary Data Sheet
V
CES
= 600 V
I
C25
= 48 A
V
CE(sat)
= 2.5 V
G = Gate
C = Collector
E = Emitter
TAB = Collector
TO-247 (IXSH)
2004 IXYS All rights reserved
TO-268 (IXST)
G
E
C (TAB)
G
C E
C (TAB)
IXSH 30N60B2D1
IXST 30N60B2D1
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ. max.
V
F
I
F
= 30A, V
GE
= 0 V
T
J
=150
C
1.6
V
2.5
V
I
RM
I
F
= 50A, V
GE
= 0 V, -di
F
/dt = 100 A/
s T
J
= 100
C 2.0
2.5
A
t
rr
V
R
= 100 V
T
J
= 100
C 150
ns
t
rr
I
F
= 1 A; -di/dt = 100 A/
s; V
R
= 30 V
30
ns
R
thJC
0.9 K/W
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min. typ. max.
g
fs
I
C
= 24A; V
CE
= 10 V, Note 1
7.0
12.0
S
C
ies
1220
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V
110
pF
f = 1 MHz
20N60B2D1
140
pF
C
res
42
pF
Q
g
50
nC
Q
ge
I
C
= 24A, V
GE
= 15 V, V
CE
= 0.5 V
CES
23
nC
Q
gc
15
nC
t
d(on)
30
ns
t
ri
30
ns
t
d(off)
130
280
ns
t
fi
140
300
ns
E
off
0.55
1.0 mJ
t
d(on)
30
ns
t
ri
50
ns
E
on
20N60B2
0.32
mJ
20N60B2D1
0.82
mJ
t
d(off)
202
ns
t
fi
234
ns
E
off
1.18
mJ
R
thJC
0.50 K/W
R
thCS
0.21
K/W
Inductive load, T
J
= 25
C
I
C
= 24A, V
GE
= 15 V
V
CE
= 400 V, R
G
= 5
Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125
C
I
C
= 24 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= 5
Switching times may increase for
V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or increased R
G
Note 1:
Pulse test, t
300 s, duty cycle d 2 %
TO-247 (IXSH) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
Terminals: 1 - Gate
2 - Drain
1 2 3
TO-268 (IXST) Outline
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
IXSH 30N60B2D1
IXST 30N60B2D1
Fig. 2. Extended Output Characteristics
@ 25
C
0
20
40
60
80
100
120
0
2
4
6
8
10
12
14
16
18
20
V
C E
- Volts
I
C
-
A
m
p
e
re
s
V
GE
= 17V
9V
11V
13V
15V
Fig. 3. Output Characteristics
@ 125
C
0
10
20
30
40
50
60
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
CE
- Volts
I
C
- A
m
p
e
r
e
s
V
GE
= 17V
9V
7V
11V
13V
15V
Fig. 1. Output Characteristics
@ 25
C
0
10
20
30
40
50
60
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
C E
- Volts
I
C
- A
m
p
e
r
e
s
V
GE
= 17V
9V
11V
13V
15V
Fig. 4. Dependence of V
CE(sat)
on
Tem perature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
V
C E
(
s
a
t
)
- N
o
rm
a
l
i
z
e
d
I
C
= 24A
I
C
= 12A
V
GE
= 15V
I
C
= 48A
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
1
2
3
4
5
6
7
9
10
11
12
13
14
15
16
17
18
19
V
G E
- Volts
V
C E
- V
o
l
t
s
T
J
= 25
C
I
C
= 48A
24A
12A
Fig. 6. Input Adm ittance
0
10
20
30
40
50
60
70
80
90
100
110
6
8
10
12
14
16
18
V
G E
- Volts
I
C
- A
m
p
e
r
e
s
T
J
= 125
C
25
C
-40
C
IXSH 30N60B2D1
IXST 30N60B2D1
Fig. 7. Transconductance
0
2
4
6
8
10
12
14
16
18
0
20
40
60
80
100
120
I
C
- Amperes
g
f
s
-
S
i
em
en
s
T
J
= -40
C
25
C
125
C
Fig. 8. Dependence of Turn-off
Energy Loss on R
G
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
10
20
30
40
50
60
70
80
90
100
R
G
- Ohms
E
o f
f
-
m
i
l
liJ
ou
l
e
s
I
C
= 12A
T
J
= 125
C
V
GE
= 15V
V
CE
= 400V
I
C
= 24A
I
C
= 48A
Fig. 9. Dependence of Turn-Off
Energy Loss on I
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
10
15
20
25
30
35
40
45
50
I
C
- Amperes
E
o f
f
-
M
ill
iJ
ou
les
R
G
= 5
V
GE
= 15V
V
CE
= 400V
T
J
= 125
C
T
J
= 25
C
Fig. 10. Dependence of Turn-off
Energy Loss on Tem perature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25
35
45
55
65
75
85
95
105 115 125
T
J
- Degrees Centigrade
E
o f
f
-
m
i
l
liJ
ou
l
e
s
I
C
= 48A
R
G
= 5
V
GE
= 15V
V
CE
= 400V
I
C
= 24A
I
C
= 12A
Fig. 11. Dependence of Turn-off
Sw itching Tim e on R
G
150
200
250
300
350
400
450
500
550
0
10
20
30
40
50
60
70
80
90
100
R
G
- Ohms
S
w
i
t
c
h
i
n
g T
i
m
e
-
na
no
s
e
c
o
nd
s
I
C
= 12A
t
d(off)
t
fi
- - - - - -
T
J
= 125C
V
GE
= 15V
V
CE
= 400V
I
C
= 24A
I
C
= 48A
I
C
= 12A
Fig. 12. Dependence of Turn-off
Sw itching Tim e
on I
C
100
120
140
160
180
200
220
240
260
10
15
20
25
30
35
40
45
50
I
C
- Amperes
S
w
i
t
c
h
i
n
g T
i
m
e
-
na
no
s
e
c
o
nd
s
t
d(off)
t
fi
- - - - - -
R
G
= 5
V
GE
= 15V
V
CE
= 400V
T
J
= 125
C
T
J
= 25
C
IXSH 30N60B2D1
IXST 30N60B2D1
Fig. 14. Gate Charge
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
35
40
45
50
55
Q
G
- nanoCoulombs
V
G E
- V
o
l
t
s
V
CE
= 300V
I
C
= 24A
I
G
= 10mA
Fig. 15. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
C E
- Volts
C
apac
i
t
a
n
c
e
-
p F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 13. Dependence of Turn-off
Sw itching Tim e on Tem perature
120
140
160
180
200
220
240
260
25
35
45
55
65
75
85
95
105 115 125
T
J
- Degrees Centigrade
S
w
i
t
c
h
i
ng T
i
m
e
-
n
anos
ec
on
ds
t
d(off)
t
fi
- - - - - -
R
G
= 5
V
GE
= 15V
V
CE
= 400V
I
C
= 12A
24A
48A
I
C
= 48A
24A
12A
Fig. 16. Reverse-Bias Safe
Operating Area
0
5
10
15
20
25
30
35
40
45
50
100 150 200 250 300 350 400 450 500 550 600
V
C E
- Volts
I
C
-
A
m
per
es
T
J
= 125
C
R
G
= 10
dV/dT < 10V/ns
Fig. 17. Maxim um Transient Therm al Resistance
0.1
1
1
10
100
1000
Pulse Width - milliseconds
R
( t
h
)
J
C
-
(
C
/
W
)
IXSH 30N60B2D1
IXST 30N60B2D1
200
600
1000
0
400
800
60
70
80
90
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800 1000
0
5
10
15
20
0.00
0.25
0.50
0.75
1.00
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
5
10
15
20
25
30
100
1000
0
200
400
600
800
1000
0
1
2
3
0
10
20
30
40
50
60
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
nC
A/
s
A/
s
t
rr
ns
t
fr
Z
thJC
A/
s
s
DSEP 29-06
I
F
= 60A
I
F
= 30A
I
F
= 15A
T
VJ
= 100C
T
VJ
= 100C
Fig. 20. Peak reverse current I
RM
Fig. 19. Reverse recovery charge
Fig. 18. Forward current I
F
versus V
F
T
VJ
= 100C
T
VJ
= 100C
I
F
= 60A
I
F
= 30A
I
F
= 15A
Q
r
I
RM
Fig. 20. Dynamic parameters Q
r
, I
RM
Fig. 22. Recovery time t
rr
versus
Fig. 23. Peak forward voltage V
FR
I
F
= 60A
I
F
= 30A
I
F
= 15A
t
fr
V
FR
Fig. 24. Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.502
0.0052
2
0.193
0.0003
T
VJ
=25C
T
VJ
=100C
T
VJ
=150C
Fig. 21. Dynamic parameters Q
r
, I
RM
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