2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25C to 150C
1200
V
V
CGR
T
J
= 25C to 150C; R
GE
= 1 MW
1200
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25C
70
A
I
C90
T
C
= 90C
35
A
I
CM
T
C
= 25C, 1 ms
140
A
SSOA
V
GE
= 15 V, T
J
= 125C, R
G
= 5 W
I
CM
= 90
A
(RBSOA)
Clamped inductive load
@ 0.8 V
CES
t
SC
V
GE
= 15 V, V
CE
= 720 V, T
J
= 125C
10
ms
(SCSOA)
R
G
= 5 W, non repetitive
P
C
T
C
= 25C
IGBT
300
W
Diode
190
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in) from case for 10 s
300
C
Weight
TO-264
10
g
PLUS247
6
g
Features
Hole-less TO-247 package for clip
mounting
High frequency IGBT and anti-parallel
FRED in one package
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
Reduces assembly time and cost
High power density
V
CES
= 1200 V
I
C25
=
70 A
V
CE(SAT)
= 3.6 V
98733 (7/00)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C, unless otherwise specified)
min.
typ. max.
BV
CES
I
C
= 3 mA, V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 250 mA, V
CE
= V
GE
3
6
V
I
CES
V
CE
= 0.8 V
CES
1
mA
V
GE
= 0 V
T
J
= 125C
3
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
3.6
V
PLUS TO-247
TM
(IXSX)
G
C
E
C (TAB)
High Voltage
IGBT with Diode
Short Circuit SOA Capability
Device must be heatsunk for high temperature measurements to avoid thermal runaway.
IXYS reserves the right to change limits, test conditions and dimensions
Preliminary data sheet
IXSK 35N120BD1
IXSX 35N120BD1
TO-264 AA
G
C
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
(IXSK)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
5,017,508
5,049,961 5,187,117 5,486,715
4,850,072 4,931,844
5,034,796
5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXSX 35N120BD1
IXSX 35N120BD1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C, unless otherwise specified)
min.
typ. max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
16
23
S
Pulse test, t 300 ms, duty cycle 2 %
C
ies
3600
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
315
pF
C
res
75
pF
Q
g
120
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
33
nC
Q
gc
49
nC
t
d(on)
36
ns
t
ri
27
ns
t
d(off)
160
300 ns
t
fi
180
300 ns
E
off
5
9 mJ
t
d(on)
38
ns
t
ri
29
ns
E
on
6
mJ
t
d(off)
240
ns
t
fi
340
ns
E
off
9
mJ
R
thJC
0.42 K/W
R
thCK
0.15
K/W
Inductive load, T
J
= 125C
I
C
= I
C90
, V
GE
= 15 V,
V
CE
= 0.8 V
CES
, R
G
= 5.0 W
Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25C, unless otherwise specified)
Symbol
Test Conditions
min.
typ. max.
V
F
I
F
= 130A, V
GE
= 0 V, Pulse test,
2.75
V
t 300 ms, duty cycle d 2 %, T
J
= 125C
1.85
V
I
RM
I
F
= 130A, V
GE
= 0 V, -di
F
/dt = 100 A/ms T
J
=100C
7
14.3
A
t
rr
V
R
= 100 V
I
F
= 1 A; -di/dt = 200 A/ms; V
R
= 30 V
40
ns
R
thJC
0.65 K/W
Inductive load, T
J
= 25C
I
C
= I
C90
, V
GE
= 15 V,
V
CE
= 0.8 V
CES
, R
G
= 5.0 W
Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
TO-247 HOLE-LESS Outline
TO-264 AA Outline
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