1 - 2
2000 IXYS All rights reserved
G = Gate,
C = Collector,
E = Emitter
98673A (7/00)
IGBT with Diode
ISOPLUS247
TM
(Electrically Isolated Backside)
Short Circuit SOA Capability
Preliminary data
Features
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
IXSR 40N60CD1
V
CES
= 600 V
I
C25
= 62 A
V
CE(SAT)
= 2.5 V
t
fi(typ)
= 70 ns
* Patent pending
ISOPLUS 247
TM
(IXSR)
G
C
Isolated backside*
E 153432
E
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
W
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C, limited by leads
62
A
I
C90
T
C
= 90
C
37
A
I
CM
T
C
= 25
C, 1 ms
150
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 22
W
I
CM
= 80
A
(RBSOA)
Clamped inductive load, L = 30
m
H
@ 0.8 V
CES
t
SC
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125
C
10
m
s
(SCSOA)
R
G
= 22
W,
non repetitive
P
C
T
C
= 25
C
210
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Weight
PLUS247
5
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 1 mA, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 4 mA, V
CE
= V
GE
4
7
V
I
CES
V
CE
= 0.8 V
CES
650
m
A
V
GE
= 0 V
T
J
= 150
C
5
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
T
, V
GE
= 15 V
2.5
V
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
T
; V
CE
= 10 V,
16
23
S
Pulse test, t
300
m
s, duty cycle
2 %
C
ies
3700
pF
C
oes
V
GS
= 0 V, V
DS ,
25 V, = f = 1 MHz
440
pF
C
res
60
pF
Q
g
190
nC
Q
ge
I
C
= I
T
, V
GE
= 15 V, V
CE
= 0.5 V
CES
45
nC
Q
gc
88
nC
t
d(on)
50
ns
t
ri
50
ns
t
d(off)
70
140
ns
t
fi
70
120
ns
E
off
1.0
1.7
mJ
t
d(on)
50
ns
t
ri
50
ns
E
on
2.2
mJ
t
d(off)
140
ns
t
fi
140
ns
E
off
1.7
mJ
R
thJC
0.6 K/W
R
thCK
0.15
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= I
T
, V
GE
= 0 V,
1.8
V
Pulse test
300
m
s, duty cycle d
2 %
I
RM
I
F
= I
T
, V
GE
= 0 V, -di
F
/dt = 100 A/
m
s
2
2.5
A
t
rr
V
R
= 100 V
I
F
= 1 A; -di/dt = 200 A/
m
s; V
R
= 30 V
35
ns
R
thJC
1.15 K/W
Inductive load, T
J
= 25
C
I
C
= I
T
, V
GE
= 15 V, L = 100
m
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.7
W
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125
C
I
C
= I
T
, V
GE
= 15 V, L = 100
m
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.7
W
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Note: 1. I
T
= 40A
IXSR 40N60CD1
ISOPLUS 247 (IXSR) OUTLINE
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190 .205
A
1
2.29
2.54
.090 .100
A
2
1.91
2.16
.075 .085
b
1.14
1.40
.045 .055
b
1
1.91
2.13
.075 .084
b
2
2.92
3.12
.115 .123
C
0.61
0.80
.024 .031
D
20.80
21.34
.819 .840
E
15.75
16.13
.620 .635
e 5.45 BSC
.215 BSC
L
19.81
20.32
.780 .800
L1
3.81
4.32
.150 .170
Q
5.59
6.20
.220 .244
R
4.32
4.83
.170 .190
S
13.21
13.72
.520 .540
T
15.75
16.26
.620 .640
U
1.65
3.03
.065 .080
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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