DS99321A(IXTA-IXTP8N50P)
2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
500
V
V
DGR
T
J
= 25
C to 150C; R
GS
= 1 M
500
V
V
GS
Continuous
20
V
V
GSM
Transient 30 V
I
D25
T
C
= 25
C
8
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
14
A
I
AR
T
C
= 25
C
8
A
E
AR
T
C
= 25
C
17
mJ
E
AS
T
C
= 25
C
300
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150C, R
G
= 10
P
D
T
C
= 25
C
150
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
Maximum tab temperature for soldering
260
C
TO-263 package for 10s
M
d
Mounting torque
(TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220
4
g
TO-263
3
g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99321(08/05)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2.5
5.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
5
A
V
GS
= 0 V
T
J
= 125
C
50
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
0.8
Pulse test, t
300 s, duty cycle d 2 %
PolarHV
TM
Power MOSFET
Advance Technical Information
N-Channel Enhancement Mode
Avalanche Energy Rated
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
TO-263 (IXTA)
TO-220 (IXTP)
D
(TAB)
G
S
G
S
(TAB)
IXTA 8N50P
IXTP 8N50P
V
DSS
= 500 V
I
D25
= 8 A
R
DS(on)
= 0.8
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 8N50P
IXTP 8N50P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
5
8
S
C
iss
1050
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
120
pF
C
rss
12
pF
t
d(on)
20
n s
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
25
n s
t
d(off)
R
G
= 10
(External)
60
n s
t
f
18
n s
Q
g(on)
20
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
7
nC
Q
gd
7
nC
R
thJC
0.83 K/W
R
thCK
(TO-220)
0.25
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
8
A
I
SM
Repetitive
14
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
I
F
= 3 A, V
GS
=0V, V
R
=100V
400
n s
-di/dt = 100 A/
s
Pins: 1 - Gate
2 - Drain
3 - Source
4 - Drain
TO-220 (IXTP) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
TO-263 (IXTA) Outline
Pins: 1 - Gate 3 - Source
2, 4 - Drain
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
2005 IXYS All rights reserved
IXTA 8N50P
IXTP 8N50P
Fig. 2. Extended Output Characteristics
@ 25
C
0
2
4
6
8
10
12
14
16
0
3
6
9
12
15
18
21
24
27
30
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
5V
7V
6V
Fig. 3. Output Characteristics
@ 125
C
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10
12
14
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25
C
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
7V
6V
5V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o n )
-
N
o
rm
a
l
i
z
e
d
I
D
= 8A
I
D
= 4A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
1
2
3
4
5
6
7
8
9
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
0
2
4
6
8
10
12
14
16
18
I
D
- Amperes
R
D
S
(
o n )
-
N
o
rm
a
l
i
z
e
d
T
J
= 125
C
T
J
= 25
C
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 8N50P
IXTP 8N50P
Fig. 11. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
a
pac
i
t
anc
e
-
pic
o
F
a
r
ads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
16
18
20
22
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 250V
I
D
= 4A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
2
4
6
8
10
12
14
3.5
4
4.5
5
5.5
6
6.5
7
V
G S
- Volts
I
D
-
A
m
p
e
r
e
s
T
J
= 125
C
25
C
-40
C
Fig. 8. Transconductance
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
I
D
- Amperes
g
f s
- S
i
e
m
e
n
s
T
J
= -40
C
25
C
125
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
4
8
12
16
20
24
0.4
0.5
0.6
0.7
0.8
0.9
1
V
S D
- Volts
I
S
- A
m
p
e
r
e
s
T
J
= 125
C
T
J
= 25
C
Fig. 12. Forw ard-Bias
Safe Operating Area
0.1
1
10
100
10
100
1000
V
D S
- Volts
I
D
- A
m
p
e
r
e
s
100s
1ms
DC
T
J
= 150C
T
C
= 25C
R
DS(on)
Limit
10ms
25s
2005 IXYS All rights reserved
Fig. 13. Maxim um Transient Thermal Resistance
0.10
1.00
0.001
0.01
0.1
1
10
Pulse Width - Seconds
R
( t h ) J
C
-
C /
W
IXTA 8N50P
IXTP 8N50P
PDF 
ZIP