IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
I
XYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
500
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
500
V
V
G S
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
12
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
48
A
P
D
T
C
= 25
C
180
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD (IXTH)
Standard
Power MOSFET
N-Channel Enhancement Mode
V
DSS
I
D25
R
DS(on)
IXTH 12 N50A
500 V
12 A 0.4
IXTM 12 N50A
500 V
12 A 0.4
G = Gate,
D = Drain,
S = Source,
TAB = Drain
D
G
TO-204 AA (IXTM)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2
4
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
200
A
V
GS
= 0 V
T
J
= 125
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
0.40
Pulse test, t
300
s, duty cycle d
2 %
Features
q
International standard packages
q
Low R
DS (on)
HDMOS
TM
process
q
Rugged polysilicon gate cell structure
q
Low package inductance (< 5 nH)
- easy to drive and to protect
q
Fast switching times
Applications
q
Switch-mode and resonant-mode
power supplies
q
Motor controls
q
Uninterruptible Power Supplies (UPS)
q
DC choppers
Advantages
q
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
q
Space savings
q
High power density
91541E(5/96)
D (TAB)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961 5,187,117 5,486,715
4,850,072
4,931,844
5,034,796
5,063,307 5,237,481 5,381,025
IXTH 12N50A
IXTM 12N50A
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
7.5
9
S
C
iss
2800
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
300
pF
C
rss
70
pF
t
d(on)
18
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
27
40
ns
t
d(off)
R
G
= 4.7
,
(External)
76
100
ns
t
f
32
60
ns
Q
g(on)
110
120
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
15
25
nC
Q
gd
40
50
nC
R
thJC
0.70
K/W
R
thCK
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
12
A
I
SM
Repetitive; pulse width limited by T
JM
48
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
I
F
= I
S
, -di/dt = 100 A/
s, V
R
= 100 V
600
ns
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
TO-247 AD (IXTH) Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
6.4
11.4
.250
.450
A1
3.42
.135
b
.97
1.09
.038
.043
D
22.22
.875
e
10.67
11.17
.420
.440
e1
5.21
5.71
.205
.225
L
7.93
.312
p
3.84
4.19
.151
.165
p1
3.84
4.19
.151
.165
q
30.15 BSC
1.187 BSC
R
13.33
.525
R1
4.77
.188
s
16.64
17.14
.655
.675
TO-204AA (IXTM) Outline
Pins
1 - Gate
2 - Source
Case - Drain
1 2 3
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
I
XYS reserves the right to change limits, test conditions, and dimensions.
IXTH 12N50A
IXTM 12N50A
T
J
- Degrees C
-50
-25
0
25
50
75
100
125
150
BV/
V
G(
th
)
-
No
rm
alize
d
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
GS(th)
T
C
- Degrees C
-50
-25
0
25
50
75
100
125
150
I
D
-
Am
pe
res
0.0
2.5
5.0
7.5
10.0
12.5
15.0
T
J
- Degrees C
-50
-25
0
25
50
75
100
125
150
R
DS
(
on)
-
No
rma
lize
d
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
- Amperes
0
5
10
15
20
25
R
DS
(
on)
-
No
rma
lize
d
0.8
0.9
1.0
1.1
1.2
1.3
1.4
V
GS
= 15V
V
GS
- Volts
0
1
2
3
4
5
6
7
8
9
10
I
D
- A
m
p
ere
s
0
5
10
15
20
25
V
DS
- Volts
0
5
10
15
20
I
D
- A
m
p
ere
s
0
5
10
15
20
25
6V
5V
7V
BV
DSS
12N50A
I
D
= 6A
V
GS
= 10V
V
GS
= 10V
T
J
= 25C
T
J
= 25C
T
J
= 25C
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
Fig. 3 R
DS(on)
vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
Fig. 5 Drain Current vs.
Fig. 6 Temperature Dependence of
Case Temperature
Breakdown and Threshold Voltage
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961 5,187,117 5,486,715
4,850,072
4,931,844
5,034,796
5,063,307 5,237,481 5,381,025
V
SD
- Volt
0.00
0.25
0.50
0.75
1.00
1.25
1.50
I
S
- A
m
p
ere
s
0
5
10
15
20
25
Time - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
The
rm
al R
esp
ons
e -
K/W
0.01
0.10
1.00
D = 0.2
D=0.02
D = 0.5
D = 0.1
D = 0.05
D=0.01
Single Pulse
V
DS
- Volts
0
5
10
15
20
25
Cap
aci
tanc
e -
pF
0
500
1000
1500
2000
2500
3000
3500
4000
C
rss
C
oss
C
iss
Gate Charge - nCoulombs
0
25
50
75
100
V
GS
- Vo
lts
0
1
2
3
4
5
6
7
8
9
10
I
D
= 6.5A
V
DS
= 250V
V
DS
- Volts
1
10
100
I
D
- Am
pe
res
0.1
1
10
100
10s
100s
1ms
10ms
100ms
Limited by R
DS(on)
I
G
= 10mA
T
J
= 125C
T
J
= 25C
IXTH 12N50A
IXTM 12N50A
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
Fig.11 Transient Thermal Impedance
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
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