2006 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSX
T
J
= 25
C to 150C
500
V
V
DGX
T
J
= 25
C to 150C
500
V
V
GS
Continuous
30
V
V
GSM
Transient
40
V
I
D25
T
C
= 25
C
20
A
I
DM
T
C
= 25
C; pulse width limited by T
JM
50
A
P
D
T
C
= 25
C 400
W
T
J
-55 ... + 150
C
T
JM
150
C
T
stg
-55 ... + 150
C
T
L
1.6 mm (0.063 in) from case for 10 seconds 300
C
T
ISOL
Plastic case for 10 seconds 300
C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight
TO-247 6
g
TO-268 4
g
Features
Normally ON Mode
International standard packages
Molding epoxies meet UL
94
V-0
flammability classification
Applications
Level shifting
Triggers
Solid State Relays
Current Regulators
Active load
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C, unless otherwise specified)
min.
typ.
max.
V
DSX
V
GS
= -10 V, I
D
= 250 mA
500
V
V
GS(off)
V
DS
= 25 V, I
D
= 250 mA
-1.5
-3.5
V
I
GSS
V
GS
= 30 V
DC
, V
DS
= 0
100
nA
I
DSX(off)
V
DS
= V
DSS
T
J
= 25C
25
A
V
GS
= -10 V
T
J
= 125C
500
A
R
DS(on)
V
GS
= 10 V, I
D
= 10 A Note 1
0.33
I
D(on)
V
GS
= 0 V, V
DS
= 25 V Note 1
1.5 A
99192(01/06)
Preliminary Data Sheet
TO-247 (IXFH)
G = Gate
D = Drain
S = Source
TAB = Drain
IXTH 20N50D
IXTT 20N50D
High Voltage
MOSFET
N-Channel
,
Depletion Mode
V
DSS
=
500 V
I
D25
=
20 A
R
DS(on)
= 0.33
G
D
S
(TAB)
TO-268 (IXTT)
G
S
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH 20N50D
IXTT 20N50D
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 30 V, I
D
=10 A, Note 1
4.0 7.5 S
C
iss
2500
pF
C
oss
V
GS
= -10 V, V
DS
= 25 V, f = 1 MHz
400
pF
C
rss
100
pF
t
d(on)
35
n s
t
r
V
GS
= 0 V to -10 V, V
DS
= 0.5 V
DSX
85
n s
t
d(off)
I
D
= 10 A, R
G
= 4.7
(External),
110
n s
t
f
75
n s
Q
g(on)
125
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSX
, I
D
= 0.5 I
D25
35
nC
Q
gd
51
nC
R
thJC
0.31
K/W
R
thCK
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
SD
I
F
= I
D25
, V
GS
= -10 V, Note 1
0.85
1.5
V
t
rr
I
F
= 20A, -di/dt = 100 A/
s, V
R
= 100 V 510 ns
v
GS
= -10 V
Terminals:
1 - Gate
2 - Drain
3 - Source Tab - Drain
1 2 3
TO-247 AD (IXTH) Outline
Note 1: Pulse test, t
300 s, duty cycle d 2 %
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205
0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232
0.252
R
4.32
5.49
.170
.216
S
6.15
BSC
242
BSC
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
Terminals:
1 - Gate
2 - Drain
3 - Source Tab - Drain
TO-268 (IXTTH) Outline
2006 IXYS All rights reserved
Fig . 1. Ou tp u t C h ar acte r is tics
@ 25
C
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
9
1 0
V
D S
- V olts
I
D
-
Am
per
es
V
GS
= 5V
2 V
1 V
0V
3V
4 V
0 V
-1V
Fig . 2. Exte n d e d Ou tp ut Char acte r is tics
@ 25
C
0
5
10
15
20
25
30
35
40
0
3
6
9
12
15
18
21
24
27
30
V
D S
- V olts
I
D
- A
m
peres
V
GS
= 5V
3V
2V
4V
1V
0V
Fig. 3. Output Characte ris tics
@ 125
C
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
V
D S
- V olts
I
D
-
A
m
per
es
V
GS
= 5V
2V
3V
4V
1V
0V
-1V
Fig. 4. R
DS(on
)
Norm alize d to 0.5 I
D25
Value vs . Junction Te m pe rature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D S ( o n )
- No
rma
liz
e
d
V
GS
= 5V
V
GS
= 10V
I
D
= 10A
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0
5
10
15
20
25
30
I
D
- Amperes
R
D
S
( o n )
- Normal
i
z
ed
T
J
= 125C
T
J
= 25C
V
GS
= 10V
V
GS
= 5V
Fig. 6. Drain Current vs. Case
Tem perature
0
2
4
6
8
10
12
14
16
18
20
22
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
Amper
es
IXTH 20N50D
IXTT 20N50D
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH 20N50D
IXTT 20N50D
Fig. 7. Input Adm ittance
0
5
10
15
20
25
-2
-1
0
1
2
3
V
G S
- V olts
I
D
-
Am
per
es
T
J
= 125C
25C
-40C
V
DS
= 30V
Fig. 8. Transconductance
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
I
D
- Amperes
g
f s
-
S
i
emens
T
J
= -40C
25C
125C
V
DS
= 30V
Fig. 9. Source Curre nt vs .
Source -To-Drain Voltage
0
5
10
15
20
25
30
35
40
45
50
55
60
0.5
0.6
0.7
0.8
0.9
1
V
S D
- V olts
I
S
-
A
m
per
es
T
J
= 125C
T
J
= 25C
V
GS
= -10V
Fig. 10. De pe nde nce of Bre ak dow n and
Thre s hole Voltage s on Te m pe rature
0.8
0.9
1
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
BV /
V
G
S (
o f f )
- N
o
rmal
i
z
ed
V
GS(off)
@ V
DS
= 25V
BV
DSS
@ V
GS
= -10V
Fig. 11. Gate Charge
-5
-3
-1
1
3
5
7
9
11
0
20
40
60
80
100
120
140
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 250V
I
D
= 10A
I
G
= 10mA
Fig. 12. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
apacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
V
GS
= -10V
2006 IXYS All rights reserved
Fig. 13. For w ar d-Bias
Safe Ope r atin g Are a
1
10
100
10
100
1000
V
D S
- V olts
I
D
- A
m
peres
100s
1m s
D C
T
J
= 150C
T
C
= 25C
R
D S(on)
Lim it
10m s
25s
Fig. 14. Maximum Transient Thermal Resistance
0.01
0.10
1.00
0.1
1
10
100
1000
Pulse Width - milliseconds
R
( t h
) J
C
-
C / W
IXTH 20N50D
IXTT 20N50D
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