2003 IXYS All rights reserved
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Features
International standard packages
Low R
DS (on)
Rated for unclamped Inductive load
Switching (UIS)
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
High Voltage
Power MOSFETs
TO-247
G = Gate
D = Drain
S = Source
TAB = Drain
IXTH 3N120
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
3N120
1200
V
3N110
1100
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
3N120
1200
V
3N110
1100
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
3
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
12
A
I
AR
T
C
= 25
C
3
A
E
AR
T
C
= 25
C
20
mJ
E
AS
700
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
5
V/ns
T
J
150
C, R
G
= 2
P
D
T
C
= 25
C
150
W
T
J
-55 to +150
C
T
JM
150
C
T
stg
-55 to +150
C
T
L
1.6 mm (0.063 in) from case for 10 s 300
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
1200
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2.5
4.5
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
25
A
V
GS
= 0 V
T
J
= 125
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
4.5
Note 1
Preliminary Data Sheet
DS99025(03/03)
V
DSS
= 1200 V
I
D25
=
3 A
V
DS(on)
= 4.5
G
D
S
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH 3N120
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, Note 1
1.5
2.2
S
C
iss
1050 1300
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
100 125
pF
C
rss
25
50
pF
t
d(on)
17
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
15
ns
t
d(off)
R
G
= 4.7
(External),
32
ns
t
f
18
ns
Q
g(on)
39
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
9
nC
Q
gd
22
nC
R
thJC
0.8
K/W
R
thCK
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
3
A
I
SM
Repetitive; pulse width limited by T
JM
12
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
I
F
= I
S
, -di/dt = 100 A/
s, V
R
= 100 V
700
ns
Notes: 1. Pulse test, t
300
s, duty cycle d
2 %
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
2003 IXYS All rights reserved
I
D
= 3A
T
J
= 25
O
C
V
GS
- Volts
3.5
4.0
4.5
5.0
5.5
6.0
I
D
-
A
m
p
e
r
e
s
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T
C
- Degrees C
-50 -25
0
25
50
75
100 125 150
I
D
-
A
m
p
e
r
e
s
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
T
J
- Degrees C
25
50
75
100
125
150
R
DS
(
O
N
)
-
No
r
m
al
ize
d
1.0
1.3
1.6
1.9
2.2
2.5
2.8
I
D
=1.5A
I
D
- Amperes
0
1
2
3
4
5
R
DS
(
O
N
)
-
N
o
r
m
al
iz
ed
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
V
DS
- Volts
0
3
6
9
12 15 18 21 24 27 30
I
D
-
A
m
pe
r
e
s
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Volts
0
2
4
6
8
10 12 14 16 18 20
I
D
-
A
m
pe
r
e
s
0
1
2
3
4
5
V
GS
= 10V
T
J
= 125
O
C
T
J
= 25
O
C
5V
4V
5V
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 9V
8V
7V
6V
T
J
= 125
O
C
6V
V
GS
= 9V
8V
7V
V
GS
= 10V
Fig.1 Output Characteristics @ T
j
= 25C
Fig. 2 Output Characteristics @ T
j
= 125C
Fig. 3 R
DS(on)
vs. Drain Current
Fig. 4 Temperature Dependence of Drain
to Source Resistance
Fig. 5 Drain Current vs. Case Temperature
Fig. 6 Drain Current vs Gate Source Voltage
IXTH 3N120
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH 3N120
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
V
SD
- Volts
0.2
0.4
0.6
0.8
1.0
I
D
-
A
m
pe
r
e
s
0
1
2
3
4
5
Pulse Width - Seconds
10
-4
10
-3
10
-2
10
-1
10
0
10
1
R(
th
)
JC
- K/W
0.00
0.01
0.10
1.00
V
DS
- Volts
0
5
10
15
20
25
30
35
40
C
a
pac
i
tance -
pF
10
100
1000
Gate Charge - nC
0
10
20
30
40
50
60
V
GS
- Volts
0
2
4
6
8
10
12
Crss
Coss
Ciss
V
DS
= 600V
I
D
= 1.5A
f = 1MHz
T
J
= 125
O
C
T
J
= 25
O
C
V
GS
= 0V
Single Pulse
Fig. 7 Gate Charge Characteristic Curve
Fig. 8 Capacitance Curves
Fig. 9 Drain Current vs Drain to Source Voltage
Fig.10 Transient Thermal Impedance
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