2003 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
250
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2.0
4.0
V
I
GSS
V
GS
= 20 V DC, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 125C
250
A
R
DS(on)
V
GS
= 10 V, I
D
= 15A
60
72 m
Pulse test, t
300 ms, duty cycle d
2%
DS98954A(03/03)
Standard
Power MOSFET
N-Channel Enhancement Mode
Symbol
Test conditions
Maximum ratings
V
DSS
T
J
= 25C to 150C
250
V
V
DGR
T
J
= 25C to 150C; R
GS
= 1.0 M
250
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C MOSFET chip capability
41
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
164
A
I
AR
41
A
E
AR
T
C
= 25
C
30
mJ
E
AS
T
C
= 25
C
1.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
5
V/ns
T
J
150
C, R
G
= 2
P
D
T
C
= 25
C
300
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-264
6
g
TO-247 AD
G = Gate
D
= Drain
S = Source
Tab = Drain
IXTH 41N25
V
DSS
= 250 V
I
D(cont)
= 41 A
R
DS(on)
= 72 m
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
C
G
D
S
D (TAB)
Features
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
International standard package
JEDEC TO-247 AD
Fast switching times
High commutating dv/dt rating
Applications
Motor controls
DC choppers
Switched-mode and resonant-mode
power supplies
Uninterruptible Power Supplies (UPS)
Advantages
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
Preliminary Data Sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol
Test Conditions
Characteristic values
(T
J
= 25C unless otherwise specified)
Min.
Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
20
28
S
C
iss
3200
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
510
pF
C
rss
180
pF
t
d(on)
19
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
19
ns
t
d(off)
R
G
= 3.6
(External)
79
ns
t
f
17
ns
Q
g(on)
110
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
18
nC
Q
gd
48
nC
R
thJC
0.42 K/W
R
thCK
0.25
K/W
Source-Drain Diode
Ratings and Characteristics
(T
J
= 25C unless otherwise specified)
Symbol
Test Conditions
Min.
Typ. Max.
I
S
V
GS
= 0V
41
A
I
SM
Repetitive; pulse width limited by T
JM
164
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d
2 %
t
rr
I
F
= 0.5 I
S
, -di/dt = 100 A/s, V
R
= 100V
300
ns
Q
rr
3.0
C
IXTH 41N25
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
2003 IXYS All rights reserved
IXTH 41N25
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
20
40
60
80
100
120
0
4
8
12
16
20
V
DS
- Volts
I
D
- A
m
p
e
re
s
V
G S
= 1 0V
9V
8V
5V
6V
7V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
5
10
15
20
25
30
35
40
45
0
1
2
3
4
5
6
7
8
V
DS
- Volts
I
D
- A
m
p
e
re
s
V
G S
= 1 0V
9V
8V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
5
10
15
20
25
30
35
40
45
0
0.5
1
1.5
2
2.5
3
3.5
4
V
DS
- Volts
I
D
-
A
m
p
e
r
e
s
V
G S
= 1 0V
9V
8V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D25
Value vs.
Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D S
(
o
n
)
-
N
o
r
m
a
liz
e
d
I
D
= 41 A
I
D
= 20.5A
V
G S
= 1 0V
Fig. 6. Drain Current vs. Case
Temperature
0
6
12
18
24
30
36
42
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
p
e
re
s
Fig. 5. R
DS(on)
Normalized to I
D25
Value vs. I
D
0.5
1
1.5
2
2.5
3
3.5
4
0
20
40
60
80
100
120
I
D
- Amperes
R
D S
(
o
n
)
-
N
o
r
m
a
liz
e
d
T
J
= 1 25C
T
J
= 25C
V
G S
= 1 0V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTH 41N25
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
C
a
p
a
c
i
t
anc
e -
p
F
C
iss
C
oss
C
rss
f = 1 M Hz
Fig. 10. Gate Charge
0
2
4
6
8
10
0
20
40
60
80
100
120
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
D S
= 1 25V
I
D
= 20.5A
I
G
= 1 0mA
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
3
3.5
4
4.5
5
5.5
6
6.5
7
V
GS
- Volts
I
D
- A
m
p
e
re
s
T
J
= -40C
25C
1 25C
Fig. 12. Maximum Transient Thermal
Resistance
0.01
0.1
1
1
10
100
1000
Pulse Width - milliseconds
R
(t
h
)
J
C
-
(
C
/
W
)
Fig. 8. Transconductance
0
10
20
30
40
50
60
0
20
40
60
80
100
120
140
I
D
- Amperes
G
f s
-
S
i
em
en
s
T
J
= -40C
25C
1 25C
Fig. 9. Source Current vs. Source-To-Drain
Voltage
0
20
40
60
80
100
120
0.4
0.6
0.8
1
1.2
1.4
V
SD
- Volts
I
S
- A
m
p
e
re
s
T
J
= 1 25C
T
J
= 25C
PDF 
ZIP